skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering

Abstract

AlN films of different thicknesses were deposited on n-Si (100) substrates by reactive radio frequency (rf) magnetron sputtering. Dependences of structure and electrical properties on thickness of deposited films were researched. The structures of the films were analyzed with scanning electron microscopy (SEM) and with transmitting electron microscopy (TEM). Electrical properties of the films were investigated on Au-AlN-(n-Si) structures by means of current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Electron microscopy investigations had shown that structure and chemical composition of the films were thickness stratified. Near silicon surface layer was amorphous aluminum oxide one contained traps of positive charges with concentration of about 4 × 10{sup 18} cm{sup −3}. Upper layers were nanocrystalline ones consisted of both wurzite AlN and cubic AlON nanocrystals. They contained traps both positive and negative charges which were situated within 30 nm distance from silicon surface. Surface densities of these traps were about 10{sup 12} cm{sup −2}. Electron traps with activation energies of (0.2 ÷ 0.4) eV and densities of about 10{sup 10} cm{sup −2} were revealed on interface between aluminum oxide layer and silicon substrate. Their densities varied weakly with the film thickness.

Authors:
; ; ; ; ;  [1];  [2];  [3]
  1. St. Petersburg State University, Ulyanovskaya 1, Petrodvorets, St.Petersburg (Russian Federation)
  2. St. Petersburg Nuclear Physics Institute, Gatchina, Leningradskii oblast, 188300 (Russian Federation)
  3. INPAC—Institute for Nanoscale Physics and Chemistry, Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium)
Publication Date:
OSTI Identifier:
22609125
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1748; Journal Issue: 1; Conference: STRANN 2016: 5. international conference on state-of-the-art trends of scientific research of artificial and natural nanoobjects, St. Petersburg (Russian Federation), 26-29 Apr 2016; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ALUMINIUM NITRIDES; ALUMINIUM OXIDES; CAPACITANCE; CONCENTRATION RATIO; CRYSTALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DENSITY; ELECTRIC CONDUCTIVITY; FILMS; LAYERS; MAGNETRONS; NANOSTRUCTURES; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; SURFACES; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY; TRAPS

Citation Formats

Bazlov, N., E-mail: n.bazlov@spbu.ru, Pilipenko, N., E-mail: nelly.pilipenko@gmail.com, Vyvenko, O., Petrov, Yu., Mikhailovskii, V., Ubyivovk, E., Kotina, I., and Zharinov, V. Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering. United States: N. p., 2016. Web. doi:10.1063/1.4954356.
Bazlov, N., E-mail: n.bazlov@spbu.ru, Pilipenko, N., E-mail: nelly.pilipenko@gmail.com, Vyvenko, O., Petrov, Yu., Mikhailovskii, V., Ubyivovk, E., Kotina, I., & Zharinov, V. Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering. United States. doi:10.1063/1.4954356.
Bazlov, N., E-mail: n.bazlov@spbu.ru, Pilipenko, N., E-mail: nelly.pilipenko@gmail.com, Vyvenko, O., Petrov, Yu., Mikhailovskii, V., Ubyivovk, E., Kotina, I., and Zharinov, V. Fri . "Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering". United States. doi:10.1063/1.4954356.
@article{osti_22609125,
title = {Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering},
author = {Bazlov, N., E-mail: n.bazlov@spbu.ru and Pilipenko, N., E-mail: nelly.pilipenko@gmail.com and Vyvenko, O. and Petrov, Yu. and Mikhailovskii, V. and Ubyivovk, E. and Kotina, I. and Zharinov, V.},
abstractNote = {AlN films of different thicknesses were deposited on n-Si (100) substrates by reactive radio frequency (rf) magnetron sputtering. Dependences of structure and electrical properties on thickness of deposited films were researched. The structures of the films were analyzed with scanning electron microscopy (SEM) and with transmitting electron microscopy (TEM). Electrical properties of the films were investigated on Au-AlN-(n-Si) structures by means of current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Electron microscopy investigations had shown that structure and chemical composition of the films were thickness stratified. Near silicon surface layer was amorphous aluminum oxide one contained traps of positive charges with concentration of about 4 × 10{sup 18} cm{sup −3}. Upper layers were nanocrystalline ones consisted of both wurzite AlN and cubic AlON nanocrystals. They contained traps both positive and negative charges which were situated within 30 nm distance from silicon surface. Surface densities of these traps were about 10{sup 12} cm{sup −2}. Electron traps with activation energies of (0.2 ÷ 0.4) eV and densities of about 10{sup 10} cm{sup −2} were revealed on interface between aluminum oxide layer and silicon substrate. Their densities varied weakly with the film thickness.},
doi = {10.1063/1.4954356},
journal = {AIP Conference Proceedings},
number = 1,
volume = 1748,
place = {United States},
year = {Fri Jun 17 00:00:00 EDT 2016},
month = {Fri Jun 17 00:00:00 EDT 2016}
}
  • Single-crystal ZrN films, 830 nm thick, are grown on MgO(001) at 450 °C by magnetically unbalanced reactive magnetron sputtering. The combination of high-resolution x-ray diffraction reciprocal lattice maps, high-resolution cross-sectional transmission electron microscopy, and selected-area electron diffraction shows that ZrN grows epitaxially on MgO(001) with a cube-on-cube orientational relationship, (001){sub ZrN}‖(001){sub MgO} and [100]{sub ZrN}‖[100]{sub MgO}. The layers are essentially fully relaxed with a lattice parameter of 0.4575 nm, in good agreement with reported results for bulk ZrN crystals. X-ray reflectivity results reveal that the films are completely dense with smooth surfaces (roughness = 1.3 nm, consistent with atomic-force microscopymore » analyses). Based on temperature-dependent electronic transport measurements, epitaxial ZrN/MgO(001) layers have a room-temperature resistivity ρ{sub 300K} of 12.0 μΩ-cm, a temperature coefficient of resistivity between 100 and 300 K of 5.6 × 10{sup −8}Ω-cm K{sup −1}, a residual resistivity ρ{sub o} below 30 K of 0.78 μΩ-cm (corresponding to a residual resistivity ratio ρ{sub 300Κ}/ρ{sub 15K} = 15), and the layers exhibit a superconducting transition temperature of 10.4 K. The relatively high residual resistivity ratio, combined with long in-plane and out-of-plane x-ray coherence lengths, ξ{sub ‖} = 18 nm and ξ{sub ⊥} = 161 nm, indicates high crystalline quality with low mosaicity. The reflectance of ZrN(001), as determined by variable-angle spectroscopic ellipsometry, decreases slowly from 95% at 1 eV to 90% at 2 eV with a reflectance edge at 3.04 eV. Interband transitions dominate the dielectric response above 2 eV. The ZrN(001) nanoindentation hardness and modulus are 22.7 ± 1.7 and 450 ± 25 GPa.« less
  • ZnO thin films were epitaxially grown on Al{sub 2}O{sub 3} (0001) substrates in a radio-frequency (rf) magnetron sputtering chamber. The surface morphology of ZnO was remarkably affected by the incorporation of a low-temperature grown ZnO buffer as well as the changes in rf-power. X-ray diffractions, combined with the surface micropits, revealed strain relaxations in the ZnO epilayers grown with higher rf-powers, which in turn caused a redshift to the intrinsic exciton absorption peak. Strain relaxations were also observed in the ZnO epilayers upon thermal annealing, which led to a redshift in the E{sub 2}{sup high} Raman mode. A factor ofmore » approx0.7 cm{sup -1} GPa{sup -1}, i.e., a biaxial stress of 1 GPa can shift the E{sub 2}{sup high} mode by 0.7 cm{sup -1}, was obtained. The point defects related absorptions and the exciton localizations were suppressed by annealing, which, in conjunction with the strain-relaxation induced redshift in the intrinsic-exciton absorptions, steepened the absorption edge and increased the optical bandgap energy of the ZnO epilayer.« less
  • Molybdenum doped zinc oxide (MZO) films were deposited on to glass substrates held at temperatures in the range from 303 to 673 K by reactive RF magnetron sputtering method. The chemical composition, crystallographic structure and surface morphology, electrical and optical properties of the films were determined. The films contained the molybdenum of 2.7 at. % in ZnO. The films deposited at 303 K were of X-ray amorphous. The films formed at 473 K were of nanocrystalline in nature with wurtzite structure. The crystallite size of the films was increased with the increase of substrate temperature. The optical transmittance of the films was inmore » the visible range was 80–85%. The molybdenum (2.7 at %) doped zinc oxide films deposited at substrate temperature of 573 K were of nanocrystalline with electrical resistivity of 7.2×10{sup −3} Ωcm, optical transmittance of 85 %, optical band gap of 3.35 eV and figure of merit 30.6 Ω{sup −1}cm{sup −1}.« less
  • Thin films of tungsten oxynitride were prepared by dual magnetron sputtering of tungsten using argon/oxygen/nitrogen gas mixtures with various nitrogen/oxygen ratios. The presence of even small amounts of oxygen had a great effect not only on the composition but on the structure of WOxNy films, as shown by Rutherford backscattering and x-ray diffraction, respectively. Significant incorporation of nitrogen occurred only when the nitrogen partial pressure exceeded 89 percent of the total reactive gas pressure. Sharp changes in the stoichiometry, deposition rate, room temperature resistivity, electrical activation energy and optical band gap were observed when the nitrogen/oxygen ratio was high.The depositionmore » rate increased from 0.31 to 0.89 nm/s, the room temperature resistivity decreased from 1.65 x 108 to 1.82 x 10-2 ?cm, the electrical activation energy decreased from 0.97 to 0.067 eV, and the optical band gap decreased from 3.19 to 2.94 eV upon nitrogen incorporation into the films. WOxNy films were highly transparent as long as the nitrogen incorporation was low, and were brownish (absorbing) and partially reflecting as nitrogen incorporation became significant.« less
  • Indium tin oxide (ITO) thin films were deposited by cesium (Cs)-assisted dc magnetron sputtering in an attempt to achieve a high performance at low temperatures. The films were deposited on SiO{sub 2}/Si wafer and glass (Eagle 2000) substrates at a substrate temperature of 100 degree sign C with a Cs vapor flow during the deposition process. The ITO thin films deposited in the presence of Cs vapor showed better crystallinity than the control films grown under normal Ar/O{sub 2} plasma conditions. The resistivity of the films with the Cs assistance was lower than that of the control films. The lowestmore » resistivity of 6.2x10{sup -4} {Omega} cm, which is {approx}20% lower than that of the control sample, was obtained without any postdeposition thermal annealing. The surface roughness increased slightly when Cs vapor was added. The optical transmittance was >80% at wavelengths ranging from 380 to 700 nm.« less