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Title: Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering

Abstract

AlN films of different thicknesses were deposited on n-Si (100) substrates by reactive radio frequency (rf) magnetron sputtering. Dependences of structure and electrical properties on thickness of deposited films were researched. The structures of the films were analyzed with scanning electron microscopy (SEM) and with transmitting electron microscopy (TEM). Electrical properties of the films were investigated on Au-AlN-(n-Si) structures by means of current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Electron microscopy investigations had shown that structure and chemical composition of the films were thickness stratified. Near silicon surface layer was amorphous aluminum oxide one contained traps of positive charges with concentration of about 4 × 10{sup 18} cm{sup −3}. Upper layers were nanocrystalline ones consisted of both wurzite AlN and cubic AlON nanocrystals. They contained traps both positive and negative charges which were situated within 30 nm distance from silicon surface. Surface densities of these traps were about 10{sup 12} cm{sup −2}. Electron traps with activation energies of (0.2 ÷ 0.4) eV and densities of about 10{sup 10} cm{sup −2} were revealed on interface between aluminum oxide layer and silicon substrate. Their densities varied weakly with the film thickness.

Authors:
; ; ; ; ;  [1];  [2];  [3]
  1. St. Petersburg State University, Ulyanovskaya 1, Petrodvorets, St.Petersburg (Russian Federation)
  2. St. Petersburg Nuclear Physics Institute, Gatchina, Leningradskii oblast, 188300 (Russian Federation)
  3. INPAC—Institute for Nanoscale Physics and Chemistry, Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium)
Publication Date:
OSTI Identifier:
22609125
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1748; Journal Issue: 1; Conference: STRANN 2016: 5. international conference on state-of-the-art trends of scientific research of artificial and natural nanoobjects, St. Petersburg (Russian Federation), 26-29 Apr 2016; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ALUMINIUM NITRIDES; ALUMINIUM OXIDES; CAPACITANCE; CONCENTRATION RATIO; CRYSTALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DENSITY; ELECTRIC CONDUCTIVITY; FILMS; LAYERS; MAGNETRONS; NANOSTRUCTURES; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; SURFACES; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY; TRAPS

Citation Formats

Bazlov, N., E-mail: n.bazlov@spbu.ru, Pilipenko, N., E-mail: nelly.pilipenko@gmail.com, Vyvenko, O., Petrov, Yu., Mikhailovskii, V., Ubyivovk, E., Kotina, I., and Zharinov, V. Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering. United States: N. p., 2016. Web. doi:10.1063/1.4954356.
Bazlov, N., E-mail: n.bazlov@spbu.ru, Pilipenko, N., E-mail: nelly.pilipenko@gmail.com, Vyvenko, O., Petrov, Yu., Mikhailovskii, V., Ubyivovk, E., Kotina, I., & Zharinov, V. Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering. United States. doi:10.1063/1.4954356.
Bazlov, N., E-mail: n.bazlov@spbu.ru, Pilipenko, N., E-mail: nelly.pilipenko@gmail.com, Vyvenko, O., Petrov, Yu., Mikhailovskii, V., Ubyivovk, E., Kotina, I., and Zharinov, V. 2016. "Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering". United States. doi:10.1063/1.4954356.
@article{osti_22609125,
title = {Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering},
author = {Bazlov, N., E-mail: n.bazlov@spbu.ru and Pilipenko, N., E-mail: nelly.pilipenko@gmail.com and Vyvenko, O. and Petrov, Yu. and Mikhailovskii, V. and Ubyivovk, E. and Kotina, I. and Zharinov, V.},
abstractNote = {AlN films of different thicknesses were deposited on n-Si (100) substrates by reactive radio frequency (rf) magnetron sputtering. Dependences of structure and electrical properties on thickness of deposited films were researched. The structures of the films were analyzed with scanning electron microscopy (SEM) and with transmitting electron microscopy (TEM). Electrical properties of the films were investigated on Au-AlN-(n-Si) structures by means of current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Electron microscopy investigations had shown that structure and chemical composition of the films were thickness stratified. Near silicon surface layer was amorphous aluminum oxide one contained traps of positive charges with concentration of about 4 × 10{sup 18} cm{sup −3}. Upper layers were nanocrystalline ones consisted of both wurzite AlN and cubic AlON nanocrystals. They contained traps both positive and negative charges which were situated within 30 nm distance from silicon surface. Surface densities of these traps were about 10{sup 12} cm{sup −2}. Electron traps with activation energies of (0.2 ÷ 0.4) eV and densities of about 10{sup 10} cm{sup −2} were revealed on interface between aluminum oxide layer and silicon substrate. Their densities varied weakly with the film thickness.},
doi = {10.1063/1.4954356},
journal = {AIP Conference Proceedings},
number = 1,
volume = 1748,
place = {United States},
year = 2016,
month = 6
}
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