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Title: Introduction of performance boosters like Ge as channel material for the future of CMOS

Abstract

High mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. Ge is one of new attractive channel materials that require CMOS scaling For future technology nodes and future high performance P-MOSFETS, we have studied a nanoscale SOI DG MOSFETs using quantum simulation approach on DG MOSFETs within the variation of Ge channel concentration and in the presence of source and drain doping by replacing Silicon in the channel by Ge using various dielectric constant. The use of high mobility channel (like Ge) to maximize the MOSFET IDsat and simultaneously circumvent the poor electrostatic control to suppress short-channel effects and enhance source injection velocity. The leakage current (I{sub off}) can be controlled by different gates oxide thickness more ever the required threshold voltage (V{sub TH}) can be achieved by keeping gate work function and altering the doping channel.

Authors:
 [1];  [2]
  1. Faculty of Electrical and Computer Engineering Mouloud Mammeri University (UMMTO), BP 17 RP 15000, Tizi-Ouzou (Algeria)
  2. University of Saida, Department of Electronic (Algeria)
Publication Date:
OSTI Identifier:
22609057
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1742; Journal Issue: 1; Conference: SIMFP2016: 5. Saudi international meeting on frontiers of physics, Gizan (Saudi Arabia), 16-18 Feb 2016; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CONCENTRATION RATIO; DIELECTRIC MATERIALS; GERMANIUM; INJECTION; LEAKAGE CURRENT; LEAKS; MOBILITY; MOSFET; NANOSTRUCTURES; PERFORMANCE; PERMITTIVITY; SCALING; SILICON; SIMULATION; THICKNESS; WORK FUNCTIONS

Citation Formats

Samia, Slimani, Laboratoire de Modélisation et Méthodes de calcul LMMC,20002 Saida, Bouaza, Djellouli, and Laboratoire de Modélisation et Méthodes de calcul LMMC,20002 Saida. Introduction of performance boosters like Ge as channel material for the future of CMOS. United States: N. p., 2016. Web. doi:10.1063/1.4953136.
Samia, Slimani, Laboratoire de Modélisation et Méthodes de calcul LMMC,20002 Saida, Bouaza, Djellouli, & Laboratoire de Modélisation et Méthodes de calcul LMMC,20002 Saida. Introduction of performance boosters like Ge as channel material for the future of CMOS. United States. doi:10.1063/1.4953136.
Samia, Slimani, Laboratoire de Modélisation et Méthodes de calcul LMMC,20002 Saida, Bouaza, Djellouli, and Laboratoire de Modélisation et Méthodes de calcul LMMC,20002 Saida. Fri . "Introduction of performance boosters like Ge as channel material for the future of CMOS". United States. doi:10.1063/1.4953136.
@article{osti_22609057,
title = {Introduction of performance boosters like Ge as channel material for the future of CMOS},
author = {Samia, Slimani and Laboratoire de Modélisation et Méthodes de calcul LMMC,20002 Saida and Bouaza, Djellouli and Laboratoire de Modélisation et Méthodes de calcul LMMC,20002 Saida},
abstractNote = {High mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. Ge is one of new attractive channel materials that require CMOS scaling For future technology nodes and future high performance P-MOSFETS, we have studied a nanoscale SOI DG MOSFETs using quantum simulation approach on DG MOSFETs within the variation of Ge channel concentration and in the presence of source and drain doping by replacing Silicon in the channel by Ge using various dielectric constant. The use of high mobility channel (like Ge) to maximize the MOSFET IDsat and simultaneously circumvent the poor electrostatic control to suppress short-channel effects and enhance source injection velocity. The leakage current (I{sub off}) can be controlled by different gates oxide thickness more ever the required threshold voltage (V{sub TH}) can be achieved by keeping gate work function and altering the doping channel.},
doi = {10.1063/1.4953136},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1742,
place = {United States},
year = {2016},
month = {6}
}