Growth and microtopographic study of CuInSe{sub 2} single crystals

Journal Article · Mon May 23 00:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4948014· OSTI ID:22608769

Chauhan, Sanjaysinh M.; Chaki, Sunil; Deshpande, M. P. ^[1]; Tailor, J. P. ^[2]

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1. Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Gujarat - 388120 (India)
2. Applied Physics Department, S.V.N.I.T., Surat, Gujarat - 395007 (India)

The CuInSe{sub 2} single crystals were grown by chemical vapour transport (CVT) technique using iodine as transporting agent. The elemental composition of the as-grown CuInSe{sub 2} single crystals was determined by energy dispersive analysis of X-ray (EDAX). The unit cell crystal structure and lattice parameters were determined by X-ray diffraction (XRD) technique. The surface microtopographic study of the as-grown CuInSe{sub 2} single crystals surfaces were done to study the defects, growth mechanism, etc. of the CVT grown crystals.

• OSTI ID: 22608769
• Journal Information: AIP Conference Proceedings, Vol. 1731, Issue 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COPPER COMPOUNDS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DEFECTS
INDIUM COMPOUNDS
LATTICE PARAMETERS
MONOCRYSTALS
SELENIUM COMPOUNDS
SURFACES
VAPORS
X-RAY DIFFRACTION