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Title: Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

Abstract

This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10{sup 3} Ωcm{sup −1}. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.

Authors:
; ;  [1]; ;  [1];  [2];  [1];  [3]
  1. NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia)
  2. (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia)
  3. (Malaysia)
Publication Date:
OSTI Identifier:
22608616
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1733; Journal Issue: 1; Conference: IC-NET 2015: International conference on nano-electronic technology devices and materials 2015, Selangor (Malaysia), 27 Feb - 2 Mar 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION; ANNEALING; CONCENTRATION RATIO; DOPED MATERIALS; EDGE LOCALIZED MODES; ELECTRICAL PROPERTIES; GLASS; NANOSTRUCTURES; OPTICAL PROPERTIES; SOL-GEL PROCESS; SPECTRA; SPECTROPHOTOMETERS; SPIN; SPIN-ON COATING; SUBSTRATES; THIN FILMS; TIN ADDITIONS; ULTRAVIOLET RADIATION; ZINC OXIDES

Citation Formats

Nasir, M. F., E-mail: babaibaik2002@yahoo.com, Zainol, M. N., E-mail: nizarzainol@yahoo.com, Hannas, M., E-mail: mhannas@gmail.com, Mamat, M. H., E-mail: mhmamat@salam.uitm.edu.my, Rusop, Mohamad, E-mail: rusop@salam.uitm.edu.my, NANO-SciTech Centre, Rahman, S. A., E-mail: saadah@um.edu.my, and Low Dimensional Materials Research Centre, Physics Department, Faculty of Science, University of Malaya, 50603 Kuala Lumpur. Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations. United States: N. p., 2016. Web. doi:10.1063/1.4948885.
Nasir, M. F., E-mail: babaibaik2002@yahoo.com, Zainol, M. N., E-mail: nizarzainol@yahoo.com, Hannas, M., E-mail: mhannas@gmail.com, Mamat, M. H., E-mail: mhmamat@salam.uitm.edu.my, Rusop, Mohamad, E-mail: rusop@salam.uitm.edu.my, NANO-SciTech Centre, Rahman, S. A., E-mail: saadah@um.edu.my, & Low Dimensional Materials Research Centre, Physics Department, Faculty of Science, University of Malaya, 50603 Kuala Lumpur. Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations. United States. doi:10.1063/1.4948885.
Nasir, M. F., E-mail: babaibaik2002@yahoo.com, Zainol, M. N., E-mail: nizarzainol@yahoo.com, Hannas, M., E-mail: mhannas@gmail.com, Mamat, M. H., E-mail: mhmamat@salam.uitm.edu.my, Rusop, Mohamad, E-mail: rusop@salam.uitm.edu.my, NANO-SciTech Centre, Rahman, S. A., E-mail: saadah@um.edu.my, and Low Dimensional Materials Research Centre, Physics Department, Faculty of Science, University of Malaya, 50603 Kuala Lumpur. Wed . "Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations". United States. doi:10.1063/1.4948885.
@article{osti_22608616,
title = {Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations},
author = {Nasir, M. F., E-mail: babaibaik2002@yahoo.com and Zainol, M. N., E-mail: nizarzainol@yahoo.com and Hannas, M., E-mail: mhannas@gmail.com and Mamat, M. H., E-mail: mhmamat@salam.uitm.edu.my and Rusop, Mohamad, E-mail: rusop@salam.uitm.edu.my and NANO-SciTech Centre and Rahman, S. A., E-mail: saadah@um.edu.my and Low Dimensional Materials Research Centre, Physics Department, Faculty of Science, University of Malaya, 50603 Kuala Lumpur},
abstractNote = {This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10{sup 3} Ωcm{sup −1}. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.},
doi = {10.1063/1.4948885},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1733,
place = {United States},
year = {2016},
month = {7}
}