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Title: Electrical properties of Mg doped ZnO nanostructure annealed at different temperature

Abstract

In this work, ZincOxide (ZnO) nanostructures doped with Mg were successfully grown on the glass substrate. Magnesium (Mg) metal element was added in the ZnO host which acts as a doping agent. Different temperature in range of 250°C to 500°C was used in order to investigate the effect of annealing temperature of ZnO thin films. Field Emission Scanning Electron Microscopy (FESEM) was used to investigate the physical characteristic of ZnO thin films. FESEM results have revealed that ZnO nanorods were grown vertically aligned. The structural properties were determined by using X-Ray Diffraction (XRD) analysis. XRD results showed Mg doped ZnO thin have highest crystalinnity at 500°C annealing temperature. The electrical properties were investigating by using Current-Voltage (I-V) measurement. I-V measurement showed the electrical properties were varied at different annealing temperature. The annealing temperature at 500°C has the highest electrical conductance properties.

Authors:
; ;  [1];  [2];  [1];  [3];  [2]
  1. NANO-ElecTronic Centre, Faculty of Electrical engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia)
  2. (Malaysia)
  3. NANO-SciTech Centre, Institue of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia)
Publication Date:
OSTI Identifier:
22608611
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1733; Journal Issue: 1; Conference: IC-NET 2015: International conference on nano-electronic technology devices and materials 2015, Selangor (Malaysia), 27 Feb - 2 Mar 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; CURRENTS; DOPED MATERIALS; ELECTRICAL PROPERTIES; FIELD EMISSION; GLASS; MAGNESIUM ADDITIONS; NANOSTRUCTURES; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES

Citation Formats

Mohamed, R., E-mail: ruziana12@gmail.com, Mamat, M. H., E-mail: hafiz-030@yahoo.com, Rusop, M., E-mail: nanouitm@gmail.com, NANO-SciTech Centre, Institue of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Ismail, A. S., E-mail: kyrin-samaxi@yahoo.com, Khusaimi, Z., E-mail: Zurai142@salam.uitm.edu.my, and Faculty of Applied Sciences, Universiti Teknologi MARA, 40450 Shah Alam, Selangor. Electrical properties of Mg doped ZnO nanostructure annealed at different temperature. United States: N. p., 2016. Web. doi:10.1063/1.4948880.
Mohamed, R., E-mail: ruziana12@gmail.com, Mamat, M. H., E-mail: hafiz-030@yahoo.com, Rusop, M., E-mail: nanouitm@gmail.com, NANO-SciTech Centre, Institue of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Ismail, A. S., E-mail: kyrin-samaxi@yahoo.com, Khusaimi, Z., E-mail: Zurai142@salam.uitm.edu.my, & Faculty of Applied Sciences, Universiti Teknologi MARA, 40450 Shah Alam, Selangor. Electrical properties of Mg doped ZnO nanostructure annealed at different temperature. United States. doi:10.1063/1.4948880.
Mohamed, R., E-mail: ruziana12@gmail.com, Mamat, M. H., E-mail: hafiz-030@yahoo.com, Rusop, M., E-mail: nanouitm@gmail.com, NANO-SciTech Centre, Institue of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Ismail, A. S., E-mail: kyrin-samaxi@yahoo.com, Khusaimi, Z., E-mail: Zurai142@salam.uitm.edu.my, and Faculty of Applied Sciences, Universiti Teknologi MARA, 40450 Shah Alam, Selangor. Wed . "Electrical properties of Mg doped ZnO nanostructure annealed at different temperature". United States. doi:10.1063/1.4948880.
@article{osti_22608611,
title = {Electrical properties of Mg doped ZnO nanostructure annealed at different temperature},
author = {Mohamed, R., E-mail: ruziana12@gmail.com and Mamat, M. H., E-mail: hafiz-030@yahoo.com and Rusop, M., E-mail: nanouitm@gmail.com and NANO-SciTech Centre, Institue of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor and Ismail, A. S., E-mail: kyrin-samaxi@yahoo.com and Khusaimi, Z., E-mail: Zurai142@salam.uitm.edu.my and Faculty of Applied Sciences, Universiti Teknologi MARA, 40450 Shah Alam, Selangor},
abstractNote = {In this work, ZincOxide (ZnO) nanostructures doped with Mg were successfully grown on the glass substrate. Magnesium (Mg) metal element was added in the ZnO host which acts as a doping agent. Different temperature in range of 250°C to 500°C was used in order to investigate the effect of annealing temperature of ZnO thin films. Field Emission Scanning Electron Microscopy (FESEM) was used to investigate the physical characteristic of ZnO thin films. FESEM results have revealed that ZnO nanorods were grown vertically aligned. The structural properties were determined by using X-Ray Diffraction (XRD) analysis. XRD results showed Mg doped ZnO thin have highest crystalinnity at 500°C annealing temperature. The electrical properties were investigating by using Current-Voltage (I-V) measurement. I-V measurement showed the electrical properties were varied at different annealing temperature. The annealing temperature at 500°C has the highest electrical conductance properties.},
doi = {10.1063/1.4948880},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1733,
place = {United States},
year = {2016},
month = {7}
}