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Title: Post-deposition annealing temperature dependence TiO{sub 2}-based EGFET pH sensor sensitivity

Abstract

EGFET pH sensor is one type of pH sensor that is used to measure and determine pH of a solution. The sensing membrane of EGFET pH sensor plays vital role in the overall performance of the sensor. This paper studies the effects of different annealing temperature of the TiO{sub 2} sensing membranes towards sensitivity of EGFET pH sensor. Sol-gel spin coating was chosen as TiO{sub 2} deposition techniques since it is cost-effective and produces thin film with uniform thickness. Deposited TiO{sub 2} thin films were then annealed at different annealing temperatures and then were connected to the gate of MOSFET as a part of the EGFET pH sensor structure. The thin films now act as sensing membranes of the EGFET pH sensor and sensitivity of each sensing membrane towards pH was measured. From the results it was determined that sensing membrane annealed at 300 °C gave the highest sensitivity followed by sample annealed at 400 °C and 500 °C.

Authors:
; ;  [1];  [2];  [3];  [4]
  1. NANO-ElecTronic Centre (NET), Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia)
  2. Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia)
  3. NANO-Science Technology (NST), Institute of Science (IOS), Faculty of Applied Sciences, Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia)
  4. Core of Frontier Materials & Industry Applications, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia)
Publication Date:
OSTI Identifier:
22608598
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1733; Journal Issue: 1; Conference: IC-NET 2015: International conference on nano-electronic technology devices and materials 2015, Selangor (Malaysia), 27 Feb - 2 Mar 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; MEMBRANES; MOSFET; PH VALUE; SENSITIVITY; SENSORS; SOL-GEL PROCESS; SPIN; SPIN-ON COATING; TEMPERATURE DEPENDENCE; THICKNESS; THIN FILMS; TITANIUM OXIDES

Citation Formats

Zulkefle, M. A., E-mail: alhadizulkefle@gmail.com, Rahman, R. A., E-mail: rohanieza.abdrahman@gmail.com, Yusoff, K. A., E-mail: khairul.aimi.yusof@gmail.com, Abdullah, W. F. H., E-mail: wanfaz@salam.uitm.edu.my, Rusop, M., E-mail: rusop@salam.uitm.edu.my, and Herman, S. H., E-mail: hana1617@salam.uitm.edu.my. Post-deposition annealing temperature dependence TiO{sub 2}-based EGFET pH sensor sensitivity. United States: N. p., 2016. Web. doi:10.1063/1.4948860.
Zulkefle, M. A., E-mail: alhadizulkefle@gmail.com, Rahman, R. A., E-mail: rohanieza.abdrahman@gmail.com, Yusoff, K. A., E-mail: khairul.aimi.yusof@gmail.com, Abdullah, W. F. H., E-mail: wanfaz@salam.uitm.edu.my, Rusop, M., E-mail: rusop@salam.uitm.edu.my, & Herman, S. H., E-mail: hana1617@salam.uitm.edu.my. Post-deposition annealing temperature dependence TiO{sub 2}-based EGFET pH sensor sensitivity. United States. doi:10.1063/1.4948860.
Zulkefle, M. A., E-mail: alhadizulkefle@gmail.com, Rahman, R. A., E-mail: rohanieza.abdrahman@gmail.com, Yusoff, K. A., E-mail: khairul.aimi.yusof@gmail.com, Abdullah, W. F. H., E-mail: wanfaz@salam.uitm.edu.my, Rusop, M., E-mail: rusop@salam.uitm.edu.my, and Herman, S. H., E-mail: hana1617@salam.uitm.edu.my. 2016. "Post-deposition annealing temperature dependence TiO{sub 2}-based EGFET pH sensor sensitivity". United States. doi:10.1063/1.4948860.
@article{osti_22608598,
title = {Post-deposition annealing temperature dependence TiO{sub 2}-based EGFET pH sensor sensitivity},
author = {Zulkefle, M. A., E-mail: alhadizulkefle@gmail.com and Rahman, R. A., E-mail: rohanieza.abdrahman@gmail.com and Yusoff, K. A., E-mail: khairul.aimi.yusof@gmail.com and Abdullah, W. F. H., E-mail: wanfaz@salam.uitm.edu.my and Rusop, M., E-mail: rusop@salam.uitm.edu.my and Herman, S. H., E-mail: hana1617@salam.uitm.edu.my},
abstractNote = {EGFET pH sensor is one type of pH sensor that is used to measure and determine pH of a solution. The sensing membrane of EGFET pH sensor plays vital role in the overall performance of the sensor. This paper studies the effects of different annealing temperature of the TiO{sub 2} sensing membranes towards sensitivity of EGFET pH sensor. Sol-gel spin coating was chosen as TiO{sub 2} deposition techniques since it is cost-effective and produces thin film with uniform thickness. Deposited TiO{sub 2} thin films were then annealed at different annealing temperatures and then were connected to the gate of MOSFET as a part of the EGFET pH sensor structure. The thin films now act as sensing membranes of the EGFET pH sensor and sensitivity of each sensing membrane towards pH was measured. From the results it was determined that sensing membrane annealed at 300 °C gave the highest sensitivity followed by sample annealed at 400 °C and 500 °C.},
doi = {10.1063/1.4948860},
journal = {AIP Conference Proceedings},
number = 1,
volume = 1733,
place = {United States},
year = 2016,
month = 7
}
  • The material composition and the Si surface passivation of aluminum oxide (Al{sub 2}O{sub 3}) films prepared by atomic layer deposition using Al(CH{sub 3}){sub 3} and O{sub 3} as precursors were investigated for deposition temperatures (T{sub Dep}) between 200 °C and 500 °C. The growth per cycle decreased with increasing deposition temperature due to a lower Al deposition rate. In contrast the material composition was hardly affected except for the hydrogen concentration, which decreased from [H] = 3 at. % at 200 °C to [H] < 0.5 at. % at 400 °C and 500 °C. The surface passivation performance was investigated after annealing at 300 °C–450 °C and also after firing stepsmore » in the typical temperature range of 800 °C–925 °C. A similar high level of the surface passivation performance, i.e., surface recombination velocity values <10 cm/s, was obtained after annealing and firing. Investigations of Al{sub 2}O{sub 3}/SiN{sub x} stacks complemented the work and revealed similar levels of surface passivation as single-layer Al{sub 2}O{sub 3} films, both for the chemical and field-effect passivation. The fixed charge density in the Al{sub 2}O{sub 3}/SiN{sub x} stacks, reflecting the field-effect passivation, was reduced by one order of magnitude from 3·10{sup 12} cm{sup −2} to 3·10{sup 11} cm{sup −2} when T{sub Dep} was increased from 300 °C to 500 °C. The level of the chemical passivation changed as well, but the total level of the surface passivation was hardly affected by the value of T{sub Dep}. When firing films prepared at of low T{sub Dep}, blistering of the films occurred and this strongly reduced the surface passivation. These results presented in this work demonstrate that a high level of surface passivation can be achieved for Al{sub 2}O{sub 3}-based films and stacks over a wide range of conditions when the combination of deposition temperature and annealing or firing temperature is carefully chosen.« less
  • Changes in the electron trapping at the interface between Ge substrates and LaGeO{sub x} films grown by atomic O assisted molecular beam deposition are inferred upon post deposition annealing treatment on the as-deposited films from electrically detected magnetic resonance (EDMR) spectroscopy and from the electrical response of Pt/LaGeO{sub x}/Ge metal oxide semiconductor (MOS) capacitors. The improved electrical performance of the MOS capacitors upon annealing is consistent with the EDMR detected reduction of oxide defects which are associated with GeO species in the LaGeO{sub x} layer as evidenced by x-ray photoelectron spectroscopy.
  • Influence of post-deposition annealing on interfacial properties related to the formation/annihilation of interfacial GaO{sub x} layer of ZrO{sub 2} grown by atomic layer deposition (ALD) on GaN is studied. ZrO{sub 2} films were annealed in N{sub 2} atmospheres in temperature range of 300 °C to 700 °C and analyzed by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that Ga-O bond to Ga-N bond area ratio decreases in the samples annealed at temperatures lower than 500 °C, which could be attributed to the thinning of GaO{sub x} layer associated with low surface defect states due to “clean up” effectmore » of ALD-ZrO{sub 2} on GaN. However, further increase in annealing temperature results in deterioration of interface quality, which is evidenced by increase in Ga-O bond to Ga-N bond area ratio and the reduction of Ga-N binding energy.« less
  • The effect of post-deposition annealing on chemical bonding states at interface between Al{sub 0.5}Ga{sub 0.5}N and ZrO{sub 2} grown by atomic layer deposition (ALD) is studied by angle-resolved x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that both of Al-O/Al 2p and Ga-O/Ga 3d area ratio decrease at annealing temperatures lower than 500 °C, which could be attributed to “clean up” effect of ALD-ZrO{sub 2} on AlGaN. Compared to Ga spectra, a much larger decrease in Al-O/Al 2p ratio at a smaller take-off angle θ is observed, which indicates higher effectiveness of the passivation of Al-O bondmore » than Ga-O bond through “clean up” effect near the interface. However, degradation of ZrO{sub 2}/AlGaN interface quality due to re-oxidation at higher annealing temperature (>500 °C) is also found. The XPS spectra clearly reveal that Al atoms at ZrO{sub 2}/AlGaN interface are easier to get oxidized as compared with Ga atoms.« less
  • No abstract prepared.