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Title: Electric field and temperature effects in irradiated MOSFETs

Abstract

Electronic devices exposed to ionizing radiation exhibit degradation on their electrical characteristics, which may compromise the functionality of the device. Understanding the physical phenomena responsible for radiation damage, which may be specific to a particular technology, it is of extreme importance to develop methods for testing and recovering the devices. The aim of this work is to check the influence of thermal annealing processes and electric field applied during irradiation of Metal Oxide Semiconductor Field Effect Transistors (MOSFET) in total ionizing dose experiments analyzing the changes in the electrical parameters in these devices.

Authors:
; ; ; ; ; ;  [1]; ; ; ; ;  [2]
  1. Centro Universitário da FEI, São Bernardo do Campo, S.P. (Brazil)
  2. Instituto de Física da USP, São Paulo, S.P. (Brazil)
Publication Date:
OSTI Identifier:
22608521
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1753; Journal Issue: 1; Conference: Latin American symposium on nuclear physics and applications, Medellin (Colombia), 30 Nov - 4 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ELECTRIC FIELDS; ELECTRONIC EQUIPMENT; IONIZING RADIATIONS; IRRADIATION; METALS; MOSFET; OXIDES; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE

Citation Formats

Silveira, M. A. G., E-mail: marcilei@fei.edu.br, Santos, R. B. B., Leite, F. G., Araújo, N. E., Cirne, K. H., Melo, M. A. A., Rallo, A., Aguiar, Vitor A. P., Aguirre, F., Macchione, E. L. A., Added, N., and Medina, N. H.. Electric field and temperature effects in irradiated MOSFETs. United States: N. p., 2016. Web. doi:10.1063/1.4955374.
Silveira, M. A. G., E-mail: marcilei@fei.edu.br, Santos, R. B. B., Leite, F. G., Araújo, N. E., Cirne, K. H., Melo, M. A. A., Rallo, A., Aguiar, Vitor A. P., Aguirre, F., Macchione, E. L. A., Added, N., & Medina, N. H.. Electric field and temperature effects in irradiated MOSFETs. United States. doi:10.1063/1.4955374.
Silveira, M. A. G., E-mail: marcilei@fei.edu.br, Santos, R. B. B., Leite, F. G., Araújo, N. E., Cirne, K. H., Melo, M. A. A., Rallo, A., Aguiar, Vitor A. P., Aguirre, F., Macchione, E. L. A., Added, N., and Medina, N. H.. Thu . "Electric field and temperature effects in irradiated MOSFETs". United States. doi:10.1063/1.4955374.
@article{osti_22608521,
title = {Electric field and temperature effects in irradiated MOSFETs},
author = {Silveira, M. A. G., E-mail: marcilei@fei.edu.br and Santos, R. B. B. and Leite, F. G. and Araújo, N. E. and Cirne, K. H. and Melo, M. A. A. and Rallo, A. and Aguiar, Vitor A. P. and Aguirre, F. and Macchione, E. L. A. and Added, N. and Medina, N. H.},
abstractNote = {Electronic devices exposed to ionizing radiation exhibit degradation on their electrical characteristics, which may compromise the functionality of the device. Understanding the physical phenomena responsible for radiation damage, which may be specific to a particular technology, it is of extreme importance to develop methods for testing and recovering the devices. The aim of this work is to check the influence of thermal annealing processes and electric field applied during irradiation of Metal Oxide Semiconductor Field Effect Transistors (MOSFET) in total ionizing dose experiments analyzing the changes in the electrical parameters in these devices.},
doi = {10.1063/1.4955374},
journal = {AIP Conference Proceedings},
number = 1,
volume = 1753,
place = {United States},
year = {Thu Jul 07 00:00:00 EDT 2016},
month = {Thu Jul 07 00:00:00 EDT 2016}
}