Electric field and temperature effects in irradiated MOSFETs

Journal Article · Thu Jul 07 00:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4955374· OSTI ID:22608521

Silveira, M. A. G.,; Santos, R. B. B.; Leite, F. G.; Araújo, N. E.; Cirne, K. H.; Melo, M. A. A.; Rallo, A. ^[1]; Aguiar, Vitor A. P.; Aguirre, F.; Macchione, E. L. A.; Added, N.; Medina, N. H. ^[2]

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1. Centro Universitário da FEI, São Bernardo do Campo, S.P. (Brazil)
2. Instituto de Física da USP, São Paulo, S.P. (Brazil)

Electronic devices exposed to ionizing radiation exhibit degradation on their electrical characteristics, which may compromise the functionality of the device. Understanding the physical phenomena responsible for radiation damage, which may be specific to a particular technology, it is of extreme importance to develop methods for testing and recovering the devices. The aim of this work is to check the influence of thermal annealing processes and electric field applied during irradiation of Metal Oxide Semiconductor Field Effect Transistors (MOSFET) in total ionizing dose experiments analyzing the changes in the electrical parameters in these devices.

• OSTI ID: 22608521
• Journal Information: AIP Conference Proceedings, Vol. 1753, Issue 1; Conference: Latin American symposium on nuclear physics and applications, Medellin (Colombia), 30 Nov - 4 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ELECTRIC FIELDS
ELECTRONIC EQUIPMENT
IONIZING RADIATIONS
IRRADIATION
METALS
MOSFET
OXIDES
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE