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Title: Microwave dielectric properties of CaCu{sub 3}Ti{sub 4}O{sub 12}-Al{sub 2}O{sub 3} composite

Abstract

(1-x)CaCu{sub 3}Ti{sub 4}O{sub 12} + (x)Al{sub 2}O{sub 3} composite (0 ≤ x ≤0.25) was prepared via conventional solid-state reaction method. The fabrication of sample was started with synthesizing stoichiometric CCTO from CaCO{sub 3}, CuO and TiO{sub 2} powders, then wet-mixed in deionized water for 24 h. The process was continued with calcined CCTO powder at 900 °C for 12 h before sintered at 1040 °C for 10 h. Next, the calcined CCTO powder with different amount of Al{sub 2}O{sub 3} were mixed for 24 h, then palletized and sintered at 1040 °C for 10. X-ray diffraction analysis on the sintered samples showed that CCTO powder was in a single phase, meanwhile the trace of secondary peaks which belong to CaAl{sub 2}O{sub 4} and Corundum (Al{sub 2}O{sub 3}) could be observed in the other samples Scanning electron microscopy analysis showed that the grain size of the sample is firstly increased with addition of Al{sub 2}O{sub 3} (x = 0.01), then become smaller with the x > 0.01. Microwave dielectric properties showed that the addition of Al{sub 2}O{sub 3} (x = 0.01) was remarkably reduced the dielectric loss while slightly increased the dielectric permittivity. However, further addition of Al{sub 2}O{sub 3} wasmore » reduced both dielectric loss and permittivity at least for an order of magnitude.« less

Authors:
; ; ;  [1]; ;  [2];  [3]
  1. School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang (Malaysia)
  2. Advance Materials Research Cluster, Faculty of Earth Sciences, Universiti Malaysia Kelantan, Jeli Campus, 17600 Jeli, Kelantan (Malaysia)
  3. School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang (Malaysia)
Publication Date:
OSTI Identifier:
22608472
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1756; Journal Issue: 1; Conference: ICoFM 2016: 2. international conference on functional materials and metallurgy, Penang (Malaysia), 28 May 2016; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; CALCIUM CARBONATES; CALCIUM COMPOUNDS; COMPOSITE MATERIALS; COPPER COMPOUNDS; COPPER OXIDES; CORUNDUM; DIELECTRIC MATERIALS; FABRICATION; GRAIN SIZE; MICROWAVE RADIATION; PERMITTIVITY; POWDERS; SCANNING ELECTRON MICROSCOPY; SOLIDS; STOICHIOMETRY; TITANATES; TITANIUM OXIDES; X-RAY DIFFRACTION

Citation Formats

Rahman, Mohd Fariz Ab, Abu, Mohamad Johari, Zaman, Rosyaini Afindi, Ahmad, Zainal Arifin, Karim, Saniah Ab, Mohamed, Julie Juliewatty, E-mail: juliewatty.m@umk.edu.my, and Ain, Mohd Fadzil. Microwave dielectric properties of CaCu{sub 3}Ti{sub 4}O{sub 12}-Al{sub 2}O{sub 3} composite. United States: N. p., 2016. Web. doi:10.1063/1.4958750.
Rahman, Mohd Fariz Ab, Abu, Mohamad Johari, Zaman, Rosyaini Afindi, Ahmad, Zainal Arifin, Karim, Saniah Ab, Mohamed, Julie Juliewatty, E-mail: juliewatty.m@umk.edu.my, & Ain, Mohd Fadzil. Microwave dielectric properties of CaCu{sub 3}Ti{sub 4}O{sub 12}-Al{sub 2}O{sub 3} composite. United States. doi:10.1063/1.4958750.
Rahman, Mohd Fariz Ab, Abu, Mohamad Johari, Zaman, Rosyaini Afindi, Ahmad, Zainal Arifin, Karim, Saniah Ab, Mohamed, Julie Juliewatty, E-mail: juliewatty.m@umk.edu.my, and Ain, Mohd Fadzil. Tue . "Microwave dielectric properties of CaCu{sub 3}Ti{sub 4}O{sub 12}-Al{sub 2}O{sub 3} composite". United States. doi:10.1063/1.4958750.
@article{osti_22608472,
title = {Microwave dielectric properties of CaCu{sub 3}Ti{sub 4}O{sub 12}-Al{sub 2}O{sub 3} composite},
author = {Rahman, Mohd Fariz Ab and Abu, Mohamad Johari and Zaman, Rosyaini Afindi and Ahmad, Zainal Arifin and Karim, Saniah Ab and Mohamed, Julie Juliewatty, E-mail: juliewatty.m@umk.edu.my and Ain, Mohd Fadzil},
abstractNote = {(1-x)CaCu{sub 3}Ti{sub 4}O{sub 12} + (x)Al{sub 2}O{sub 3} composite (0 ≤ x ≤0.25) was prepared via conventional solid-state reaction method. The fabrication of sample was started with synthesizing stoichiometric CCTO from CaCO{sub 3}, CuO and TiO{sub 2} powders, then wet-mixed in deionized water for 24 h. The process was continued with calcined CCTO powder at 900 °C for 12 h before sintered at 1040 °C for 10 h. Next, the calcined CCTO powder with different amount of Al{sub 2}O{sub 3} were mixed for 24 h, then palletized and sintered at 1040 °C for 10. X-ray diffraction analysis on the sintered samples showed that CCTO powder was in a single phase, meanwhile the trace of secondary peaks which belong to CaAl{sub 2}O{sub 4} and Corundum (Al{sub 2}O{sub 3}) could be observed in the other samples Scanning electron microscopy analysis showed that the grain size of the sample is firstly increased with addition of Al{sub 2}O{sub 3} (x = 0.01), then become smaller with the x > 0.01. Microwave dielectric properties showed that the addition of Al{sub 2}O{sub 3} (x = 0.01) was remarkably reduced the dielectric loss while slightly increased the dielectric permittivity. However, further addition of Al{sub 2}O{sub 3} was reduced both dielectric loss and permittivity at least for an order of magnitude.},
doi = {10.1063/1.4958750},
journal = {AIP Conference Proceedings},
number = 1,
volume = 1756,
place = {United States},
year = {Tue Jul 19 00:00:00 EDT 2016},
month = {Tue Jul 19 00:00:00 EDT 2016}
}
  • The effect of the addition of glassy phases on the microstructure and dielectric properties of CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) ceramics was investigated. Both single-component (B{sub 2}O{sub 3}) and multi-component (30 wt% BaO-60 wt% B{sub 2}O{sub 3}-10 wt% SiO{sub 2} (BBS)) glass systems were chosen to study their effect on the density, microstructure and dielectric properties of CCTO. Addition of an optimum amount of B{sub 2}O{sub 3} glass facilitated grain growth and an increase in dielectric constant. However, further increase in the B{sub 2}O{sub 3} content resulted in its segregation at the grain boundaries associated with a reduction in themore » grain size. In contrast, BBS glass addition resulted in well-faceted grains and increase in the dielectric constant and decrease in the dielectric loss. An internal barrier layer capacitance (IBLC) model was invoked to correlate the dielectric constant with the grain size in these samples. - Graphical abstract: Scanning electron micrograph of 30 wt% BaO-60 wt% B{sub 2}O{sub 3}-10 wt% SiO{sub 2} (BBS) glass-added CaCu{sub 3}Ti{sub 4}O{sub 12} ceramic on sintering.« less
  • This study sheds light on the effect of alumina on dielectric constant and dielectric loss of novel CaCu{sub 3}Ti{sub 4}O{sub 12} composite ceramics. Alumina, at several concentrations, was deposited on the surface of CaCu{sub 3}Ti{sub 4}O{sub 12} particles via sol-gel technique. The dielectric constant significantly increased for all frequencies and the dielectric loss substantially decreased for low and intermediate frequencies. These observations were attributed to the change in characteristics of grains and grain boundaries. It was found that the insulating properties of the grain boundaries are improved following the addition of Al{sub 2}O{sub 3}. The relative density of CaCu{sub 3}Ti{submore » 4}O{sub 12}/Al{sub 2}O{sub 3} composite ceramics decreased compared to the pure CaCu{sub 3}Ti{sub 4}O{sub 12} and the grain size was greatly changed with the alumina content affecting the dielectric properties. With the addition of alumina into CaCu{sub 3}Ti{sub 4}O{sub 12}, tighter interfaces formed. The 6%- and 10%-alumina ceramics showed the minimum dielectric loss and the maximum dielectric constant, respectively. Both the dielectric constant and loss tangent decreased in the 20%-alumina ceramic due to the formation of CuO secondary phase. It was revealed that Al serves as an electron acceptor decreasing the electron concentration, if Al{sup 3+} ions substitute for Ti{sup 4+} ions, and as an electron donor increasing the electron concentration, if Al{sup 3+} ions substitute for Ca{sup 2+} ions. We established a processing-microstructure-properties paradigm which opens new avenues for novel applications of CaCu{sub 3}Ti{sub 4}O{sub 12}/Al{sub 2}O{sub 3} composite ceramics.« less
  • Highlights: • High ϵ′ PVDF/CCTO and La doped CCTO composites prepared by Extrusion. • With addition of ceramic, there is substantial increase in the ϵ′ of matrix PVDF. • Composites exhibit double relaxation behavior. - Abstract: Melt extrusion process has been used to prepare high relative permittivity, ϵ' PVDF–CCTO and PVDF–LaCCTO composites. Phase composition has been studied using powder X-ray diffraction (XRD). Microstructural, dielectric and mechanical properties have also been studied. Young's modulus of PVDF increases with the ceramic reinforcement. Dielectric measurements are made in the frequency range 10{sup −2}–10{sup 6} Hz using two probe Novocontrol impedance analyser (ZG4) frommore » room temp to 120 °C to study the dielectric relaxation. There is a substantial increase in ϵ' of the matrix PVDF on addition of LaCCTO.« less
  • In this present work, CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) was synthesized by conventional solid-state reaction technique. The synthesis process was carried out in two phases; by conventional process (calcination and sintering at 1080°C for 10 hours) and phase II involves the micro assisted pre sintering of conventionally calcined CCTO for very short soaking time of 30 min at 1080°C in a microwave furnace followed by sintering at 1080°C for 10 hours in conventional furnace. X-ray diffraction (XRD) patterns confirmed the formation of single phase ceramic. Dielectric properties were studied over the frequency range from 50Hz -5MHz at temperatures (273K-343K). It wasmore » observed that pre- microwave sintering enhance the dielectric constant values from 10900 to 11893 and respectively reduces the dielectric loss values from 0.49 to 0.34 at room temperature(1 KHz). CCTO ceramics which are found desirable for many technological applications. The effect is more pronounced at low frequencies of applied electric field.« less
  • BaTiO{sub 3} (BTO), CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) and 0.5BaTiO{sub 3}·0.5CaCu{sub 3}Ti{sub 4}O{sub 12} (BTO–CCTO), as a new nano-composite ceramic, were successfully designed and fabricated by a semi-wet gel route and a modified solid state method. The dielectric properties of the BTO–CCTO ceramic were compared to those of the BTO and CCTO ceramics at lower sintering temperatures and durations. The X-ray diffraction analysis revealed that the BTO and CCTO ceramics form a single crystalline phase and the average crystalline sizes calculated from X-ray diffraction data were in the range of 40–65 nm. The particle sizes of the BTO, CCTO, andmore » BTO–CCTO ceramics obtained from transmission electron microscopy images were in the ranges of 40–65 nm, 80–110 nm, and 70–95 nm, respectively. The phase composition and microstructure were studied by X-ray diffraction and scanning electron microscopy. The energy dispersive X-ray results demonstrated the purity and stoichiometry of the BTO–CCTO nano-composite. The grain sizes of the BTO, CCTO and BTO–CCTO ceramics were found to be in the ranges of 500 nm–1 μm, 4–24 μm, and 250 nm–4 μm, respectively. The AC conductivity as a function of frequency confirmed the semiconducting nature of all of the ceramics and obeyed the Jonscher's power law. The impedance spectrum measurement result showed that the CCTO ceramic possessed an exceptional grain boundary resistance, which supports the internal barrier layer capacitance (IBLC) mechanism present in this ceramic and is responsible for the high ε{sub r} values. - Highlights: • Nanostructured BaTiO{sub 3}, CaCu{sub 3}Ti{sub 4}O{sub 12}, and 0.5BaTiO{sub 3}⋅ 0.5CaCu{sub 3}Ti{sub 4}O{sub 12} have been synthesized. • XRD and TEM analysis confirmed the formation of nanoparticles, 40–65 and 50–90 nm. • Impedance analysis shows high grain-boundary resistance present in CCTO ceramic. • AC conductivity as a function of frequency confirms the semiconducting nature.« less