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Title: Modeling and simulation of InGaN/GaN quantum dots solar cell

Abstract

Currently, quantum dots have attracted attention in the field of optoelectronics, and are used to overcome the limits of a conventional solar cell. Here, an In{sub 0.25}Ga{sub 0.75}N/GaN Quantum Dots Solar Cell has been modeled and simulated using Silvaco Atlas. Our results show that the short circuit current increases with the insertion of the InGaN quantum dots inside the intrinsic region of a GaN pin solar cell. In contrary, the open circuit voltage decreases. A relative optimization of the conversion efficiency of 54.77% was achieved comparing a 5-layers In{sub 0.25}Ga{sub 0.75}N/GaN quantum dots with pin solar cell. The conversion efficiency begins to decline beyond 5-layers quantum dots introduced. Indium composition of 10 % improves relatively the efficiency about 42.58% and a temperature of 285 K gives better conversion efficiency of 13.14%.

Authors:
 [1];  [2];  [3];  [4]
  1. LATSI Laboratory, Faculty of Technology, University of Blida 1 (Algeria)
  2. (Algeria)
  3. LASICOMLaboratory, Faculty of Sciences, University of Blida 1 (Algeria)
  4. Institute of Electronics, Micro-Electronics and Nanotechnologies,UMR CNRS 8520, Université des Sciences et Technologies de Lille1, Avenue Poincaré, CS 60069, 59652 Villeneuve d’Ascq (France)
Publication Date:
OSTI Identifier:
22608458
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1758; Journal Issue: 1; Conference: TMREES2016: Conference on technologies and materials for renewable energy, environment and sustainability, Beirut (Lebanon), 15-18 Apr 2016; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; CONVERSION; CURRENTS; EFFICIENCY; ELECTRICAL FAULTS; GALLIUM NITRIDES; INDIUM COMPOUNDS; LAYERS; OPTIMIZATION; QUANTUM DOTS; SIMULATION; SOLAR CELLS

Citation Formats

Aissat, A., E-mail: sakre23@yahoo.fr, LASICOMLaboratory, Faculty of Sciences, University of Blida 1, Benyettou, F., and Vilcot, J. P. Modeling and simulation of InGaN/GaN quantum dots solar cell. United States: N. p., 2016. Web. doi:10.1063/1.4959410.
Aissat, A., E-mail: sakre23@yahoo.fr, LASICOMLaboratory, Faculty of Sciences, University of Blida 1, Benyettou, F., & Vilcot, J. P. Modeling and simulation of InGaN/GaN quantum dots solar cell. United States. doi:10.1063/1.4959410.
Aissat, A., E-mail: sakre23@yahoo.fr, LASICOMLaboratory, Faculty of Sciences, University of Blida 1, Benyettou, F., and Vilcot, J. P. 2016. "Modeling and simulation of InGaN/GaN quantum dots solar cell". United States. doi:10.1063/1.4959410.
@article{osti_22608458,
title = {Modeling and simulation of InGaN/GaN quantum dots solar cell},
author = {Aissat, A., E-mail: sakre23@yahoo.fr and LASICOMLaboratory, Faculty of Sciences, University of Blida 1 and Benyettou, F. and Vilcot, J. P.},
abstractNote = {Currently, quantum dots have attracted attention in the field of optoelectronics, and are used to overcome the limits of a conventional solar cell. Here, an In{sub 0.25}Ga{sub 0.75}N/GaN Quantum Dots Solar Cell has been modeled and simulated using Silvaco Atlas. Our results show that the short circuit current increases with the insertion of the InGaN quantum dots inside the intrinsic region of a GaN pin solar cell. In contrary, the open circuit voltage decreases. A relative optimization of the conversion efficiency of 54.77% was achieved comparing a 5-layers In{sub 0.25}Ga{sub 0.75}N/GaN quantum dots with pin solar cell. The conversion efficiency begins to decline beyond 5-layers quantum dots introduced. Indium composition of 10 % improves relatively the efficiency about 42.58% and a temperature of 285 K gives better conversion efficiency of 13.14%.},
doi = {10.1063/1.4959410},
journal = {AIP Conference Proceedings},
number = 1,
volume = 1758,
place = {United States},
year = 2016,
month = 7
}
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