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Title: Potential beneficial effects of electron-hole plasmas created in silicon sensors by XFEL-like high intensity pulses for detector development

Abstract

There is a compelling need for a high frame rate imaging detector with a wide dynamic range, from single x-rays/pixel/pulse to >10{sup 6} x-rays/pixel/pulse, that is capable of operating at both x-ray free electron laser (XFEL) and 3rd generation sources with sustained fluxes of > 10{sup 11} x-rays/pixel/s [1, 2, 3]. We propose to meet these requirements with the High Dynamic Range Pixel Array Detector (HDR-PAD) by (a) increasing the speed of charge removal strategies [4], (b) increasing integrator range by implementing adaptive gain [5], and (c) exploiting the extended charge collection times of electron-hole pair plasma clouds that form when a sufficiently large number of x-rays are absorbed in a detector sensor in a short period of time [6]. We have developed a measurement platform similar to the one used in [6] to study the effects of high electron-hole densities in silicon sensors using optical lasers to emulate the conditions found at XFELs. Characterizations of the employed tunable wavelength laser with picosecond pulse duration have shown Gaussian focal spots sizes of 6 ± 1 µm rms over the relevant spectrum and 2 to 3 orders of magnitude increase in available intensity compared to previous measurements presented in [6]. Resultsmore » from measurements on a typical pixelated silicon diode intended for use with the HDR-PAD (150 µm pixel size, 500 µm thick sensor) are presented.« less

Authors:
; ; ; ;  [1];  [1];  [2]
  1. Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853 (United States)
  2. (CHESS), Cornell University, Ithaca, NY 14853 (United States)
Publication Date:
OSTI Identifier:
22608420
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1741; Journal Issue: 1; Conference: SRI2015: 12. international conference on synchrotron radiation instrumentation, New York, NY (United States), 6-10 Jul 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE COLLECTION; COMPARATIVE EVALUATIONS; ELECTRONS; FREE ELECTRON LASERS; GAIN; PHYSICAL RADIATION EFFECTS; SENSORS; SILICON; SILICON DIODES; SOLID-STATE PLASMA; SPECTRA; WAVELENGTHS; X RADIATION

Citation Formats

Weiss, Joel T., Becker, Julian, Shanks, Katherine S., Philipp, Hugh T., Tate, Mark W., Gruner, Sol M., E-mail: smg26@cornell.edu, and Cornell High Energy Synchrotron Source. Potential beneficial effects of electron-hole plasmas created in silicon sensors by XFEL-like high intensity pulses for detector development. United States: N. p., 2016. Web. doi:10.1063/1.4952910.
Weiss, Joel T., Becker, Julian, Shanks, Katherine S., Philipp, Hugh T., Tate, Mark W., Gruner, Sol M., E-mail: smg26@cornell.edu, & Cornell High Energy Synchrotron Source. Potential beneficial effects of electron-hole plasmas created in silicon sensors by XFEL-like high intensity pulses for detector development. United States. doi:10.1063/1.4952910.
Weiss, Joel T., Becker, Julian, Shanks, Katherine S., Philipp, Hugh T., Tate, Mark W., Gruner, Sol M., E-mail: smg26@cornell.edu, and Cornell High Energy Synchrotron Source. Wed . "Potential beneficial effects of electron-hole plasmas created in silicon sensors by XFEL-like high intensity pulses for detector development". United States. doi:10.1063/1.4952910.
@article{osti_22608420,
title = {Potential beneficial effects of electron-hole plasmas created in silicon sensors by XFEL-like high intensity pulses for detector development},
author = {Weiss, Joel T. and Becker, Julian and Shanks, Katherine S. and Philipp, Hugh T. and Tate, Mark W. and Gruner, Sol M., E-mail: smg26@cornell.edu and Cornell High Energy Synchrotron Source},
abstractNote = {There is a compelling need for a high frame rate imaging detector with a wide dynamic range, from single x-rays/pixel/pulse to >10{sup 6} x-rays/pixel/pulse, that is capable of operating at both x-ray free electron laser (XFEL) and 3rd generation sources with sustained fluxes of > 10{sup 11} x-rays/pixel/s [1, 2, 3]. We propose to meet these requirements with the High Dynamic Range Pixel Array Detector (HDR-PAD) by (a) increasing the speed of charge removal strategies [4], (b) increasing integrator range by implementing adaptive gain [5], and (c) exploiting the extended charge collection times of electron-hole pair plasma clouds that form when a sufficiently large number of x-rays are absorbed in a detector sensor in a short period of time [6]. We have developed a measurement platform similar to the one used in [6] to study the effects of high electron-hole densities in silicon sensors using optical lasers to emulate the conditions found at XFELs. Characterizations of the employed tunable wavelength laser with picosecond pulse duration have shown Gaussian focal spots sizes of 6 ± 1 µm rms over the relevant spectrum and 2 to 3 orders of magnitude increase in available intensity compared to previous measurements presented in [6]. Results from measurements on a typical pixelated silicon diode intended for use with the HDR-PAD (150 µm pixel size, 500 µm thick sensor) are presented.},
doi = {10.1063/1.4952910},
journal = {AIP Conference Proceedings},
number = 1,
volume = 1741,
place = {United States},
year = {Wed Jul 27 00:00:00 EDT 2016},
month = {Wed Jul 27 00:00:00 EDT 2016}
}
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