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Title: Zirconium doped TiO{sub 2} thin films: A promising dielectric layer

Abstract

In the present work, we have fabricated the zirconium doped TiO{sub 2} thin (ZTO) films from a facile spin – coating method. The addition of Zirconium in TiO{sub 2} offers conduction band offset to Si and consequently decreased the leakage current density by approximately two orders as compared to pure TiO{sub 2} thin (TO) films. The ZTO thin film shows a high dielectric constant 27 with a very low leakage current density ∼10{sup −8} A/cm{sup 2}. The oxide capacitate, flat band voltage and change in flat band voltage are 172 pF, -1.19 V and 54 mV. The AFM analysis confirmed the compact and pore free flat surface. The RMS surface roughness is found to be 1.5 Å. The ellipsometry analysis also verified the fact with a high refractive index 2.21.

Authors:
; ;  [1]
  1. Department of Physics, Indian Institute of Science, Bangalore, 560012 (India)
Publication Date:
OSTI Identifier:
22606611
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1728; Journal Issue: 1; Conference: ICC 2015: International conference on condensed matter and applied physics, Bikaner (India), 30-31 Oct 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; APPROXIMATIONS; ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; DIELECTRIC MATERIALS; DOPED MATERIALS; ELLIPSOMETRY; LAYERS; LEAKAGE CURRENT; PERMITTIVITY; REFRACTIVE INDEX; ROUGHNESS; SPIN; SPIN-ON COATING; SURFACES; THIN FILMS; TITANIUM OXIDES; ZIRCONIUM ADDITIONS

Citation Formats

Kumar, Arvind, Mondal, Sandip, E-mail: sandipmondal@physics.iisc.ernet.in, and Rao, K. S. R. Koteswara. Zirconium doped TiO{sub 2} thin films: A promising dielectric layer. United States: N. p., 2016. Web. doi:10.1063/1.4946633.
Kumar, Arvind, Mondal, Sandip, E-mail: sandipmondal@physics.iisc.ernet.in, & Rao, K. S. R. Koteswara. Zirconium doped TiO{sub 2} thin films: A promising dielectric layer. United States. doi:10.1063/1.4946633.
Kumar, Arvind, Mondal, Sandip, E-mail: sandipmondal@physics.iisc.ernet.in, and Rao, K. S. R. Koteswara. Fri . "Zirconium doped TiO{sub 2} thin films: A promising dielectric layer". United States. doi:10.1063/1.4946633.
@article{osti_22606611,
title = {Zirconium doped TiO{sub 2} thin films: A promising dielectric layer},
author = {Kumar, Arvind and Mondal, Sandip, E-mail: sandipmondal@physics.iisc.ernet.in and Rao, K. S. R. Koteswara},
abstractNote = {In the present work, we have fabricated the zirconium doped TiO{sub 2} thin (ZTO) films from a facile spin – coating method. The addition of Zirconium in TiO{sub 2} offers conduction band offset to Si and consequently decreased the leakage current density by approximately two orders as compared to pure TiO{sub 2} thin (TO) films. The ZTO thin film shows a high dielectric constant 27 with a very low leakage current density ∼10{sup −8} A/cm{sup 2}. The oxide capacitate, flat band voltage and change in flat band voltage are 172 pF, -1.19 V and 54 mV. The AFM analysis confirmed the compact and pore free flat surface. The RMS surface roughness is found to be 1.5 Å. The ellipsometry analysis also verified the fact with a high refractive index 2.21.},
doi = {10.1063/1.4946633},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1728,
place = {United States},
year = {2016},
month = {5}
}