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Title: Fabrication and characterization of pristine and annealed Ga doped ZnO thin films using sputtering

Abstract

ZnO is a wide-band gap, transparent, polar semiconductor with unparalleled optoelectronic, piezoelectric, thermal and transport properties, which make it the material of choice for a wide range of applications such as blue/UV optoelectronics, energy conversion, transparent electronics, spintronic, plasmonic and sensor devices. We report, three sets of Ga doped Zinc Oxide (GZO) were fabricated in different sputtering power (100 watt, 200 watt and 300 watt). Thereafter films were annealed in nitrogen ambient for 30 minutes at 400° C. From the optical absorption spectroscopy it was found that pristine films are showing a 75% transmittance in the visible region of light and it increases after the annealing. However, for 300 W grown sample opposite trend has been achieved for the post annealed sample. X-ray diffraction pattern of all the pristine and annealed films showed a preferable growth orientation at (002) phase. Some other weak peaks were also appeared in different angle which indicates that films are polycrystalline in nature. XRD data also reveals that crystallite size increases with sputtering power up to 200 W and thereafter it decreases with the deposition power. It also noted that the crystallite size of the annealed film increases with compare to the non annealed films.more » At room temperature an enhancement in electrical properties of Ga doped ZnO thin films was noted for the annealed ZnO films except for the film deposited at 300 watt. More significantly, it was found that annealed thin films showed the resistivity in the range of 10{sup −3} ∼ 10{sup −4} ohm-cm. Such a high optical transmittance and conducting zinc-oxide thin film can be used as a window layer in solar cell.« less

Authors:
;  [1];  [2]
  1. Department of Applied Physics, Indian School of Mines, Dhanbad, Jharkhand-826004 (India)
  2. School of Electronics Engineering, KIIT University, Campus-3, Patia, Bhubaneswar, Odisha-751024 (India)
Publication Date:
OSTI Identifier:
22606552
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1728; Journal Issue: 1; Conference: ICC 2015: International conference on condensed matter and applied physics, Bikaner (India), 30-31 Oct 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ABSORPTION SPECTROSCOPY; ANNEALING; DOPED MATERIALS; ELECTRICAL PROPERTIES; ENERGY CONVERSION; GALLIUM ADDITIONS; LAYERS; PIEZOELECTRICITY; POLYCRYSTALS; SEMICONDUCTOR MATERIALS; SENSORS; SOLAR CELLS; SPUTTERING; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; VISIBLE RADIATION; X RADIATION; X-RAY DIFFRACTION; ZINC OXIDES

Citation Formats

Mishra, Abhisek, Gouda, Himanshu Sekhar, E-mail: himanshugouda@yahoo.in, Mohapatra, Saswat, and Singh, Udai P. Fabrication and characterization of pristine and annealed Ga doped ZnO thin films using sputtering. United States: N. p., 2016. Web. doi:10.1063/1.4946546.
Mishra, Abhisek, Gouda, Himanshu Sekhar, E-mail: himanshugouda@yahoo.in, Mohapatra, Saswat, & Singh, Udai P. Fabrication and characterization of pristine and annealed Ga doped ZnO thin films using sputtering. United States. doi:10.1063/1.4946546.
Mishra, Abhisek, Gouda, Himanshu Sekhar, E-mail: himanshugouda@yahoo.in, Mohapatra, Saswat, and Singh, Udai P. Fri . "Fabrication and characterization of pristine and annealed Ga doped ZnO thin films using sputtering". United States. doi:10.1063/1.4946546.
@article{osti_22606552,
title = {Fabrication and characterization of pristine and annealed Ga doped ZnO thin films using sputtering},
author = {Mishra, Abhisek and Gouda, Himanshu Sekhar, E-mail: himanshugouda@yahoo.in and Mohapatra, Saswat and Singh, Udai P.},
abstractNote = {ZnO is a wide-band gap, transparent, polar semiconductor with unparalleled optoelectronic, piezoelectric, thermal and transport properties, which make it the material of choice for a wide range of applications such as blue/UV optoelectronics, energy conversion, transparent electronics, spintronic, plasmonic and sensor devices. We report, three sets of Ga doped Zinc Oxide (GZO) were fabricated in different sputtering power (100 watt, 200 watt and 300 watt). Thereafter films were annealed in nitrogen ambient for 30 minutes at 400° C. From the optical absorption spectroscopy it was found that pristine films are showing a 75% transmittance in the visible region of light and it increases after the annealing. However, for 300 W grown sample opposite trend has been achieved for the post annealed sample. X-ray diffraction pattern of all the pristine and annealed films showed a preferable growth orientation at (002) phase. Some other weak peaks were also appeared in different angle which indicates that films are polycrystalline in nature. XRD data also reveals that crystallite size increases with sputtering power up to 200 W and thereafter it decreases with the deposition power. It also noted that the crystallite size of the annealed film increases with compare to the non annealed films. At room temperature an enhancement in electrical properties of Ga doped ZnO thin films was noted for the annealed ZnO films except for the film deposited at 300 watt. More significantly, it was found that annealed thin films showed the resistivity in the range of 10{sup −3} ∼ 10{sup −4} ohm-cm. Such a high optical transmittance and conducting zinc-oxide thin film can be used as a window layer in solar cell.},
doi = {10.1063/1.4946546},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1728,
place = {United States},
year = {2016},
month = {5}
}