Effect of annealing on the structural and optical properties of TiO{sub 2} powder prepared by sol-gel route

Journal Article · Fri May 06 00:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4946437· OSTI ID:22606477

Halder, Nilanjan; Misra, Kamakhya Prakash ^[1]

---

1. Department of Physics, Manipal University Jaipur, Jaipur-303007, Rajasthan (India)

Using titanium isopropoxide as the precursor, Titanium dioxide (TiO{sub 2}) powder was synthesized via sol-gel method, a promising low temperature route for preparing nanosized metal oxide semiconductors with good homogeneity at low cost. The as-prepared nano powder was thermally treated in air at 550, 650, 750, 900 and 1100°C for 1hr after drying at room temperature and used for further characterization. X-ray diffraction measurements showed that the annealing treatment has a strong impact on the crystal phase of TiO{sub 2} samples. The crystallite size as calculated from Debye Scherer formula lies in the range 29-69 nm and is found to increase with increase in annealing temperature. Photoluminescence studies exhibit an improvement in the optical efficiency of the samples with post synthesis heat treatment. Annealing at temperature above 900°C results in a degradation of the structural and optical quality of the TiO{sub 2} nano powder samples.

• OSTI ID: 22606477
• Journal Information: AIP Conference Proceedings, Vol. 1728, Issue 1; Conference: ICC 2015: International conference on condensed matter and applied physics, Bikaner (India), 30-31 Oct 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CRYSTAL STRUCTURE
CRYSTALS
EFFICIENCY
HEAT
NANOSTRUCTURES
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
POWDERS
SEMICONDUCTOR MATERIALS
SOL-GEL PROCESS
SYNTHESIS
TEMPERATURE RANGE 0273-0400 K
TITANIUM OXIDES
X RADIATION
X-RAY DIFFRACTION