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Title: Design of novel dual-port tapered waveguide plasma apparatus by numerical analysis

Journal Article · · Physics of Plasmas
DOI:https://doi.org/10.1063/1.4956463· OSTI ID:22600059
; ;  [1]
  1. School of Electronics and Information Engineering, Sichuan University, Chengdu 610065 (China)

Microwave plasma apparatus is often of particular interest due to their superiority of low cost, electrode contamination free, and suitability for industrial production. However, there exist problems of unstable plasma and low electron density in conventional waveguide apparatus based on single port, due to low strength and non-uniformity of microwave field. This study proposes a novel dual-port tapered waveguide plasma apparatus based on power-combining technique, to improve the strength and uniformity of microwave field for the applications of plasma. A 3D model of microwave-induced plasma (field frequency 2.45 GHz) in argon at atmospheric pressure is presented. On the condition that the total input power is 500 W, simulations indicate that coherent power-combining will maximize the electric-field strength to 3.32 × 10{sup 5 }V/m and improve the uniformity of distributed microwave field, which raised 36.7% and 47.2%, respectively, compared to conventional waveguide apparatus of single port. To study the optimum conditions for industrial application, a 2D argon fluid model based on above structure is presented. It demonstrates that relatively uniform and high-density plasma is obtained at an argon flow rate of 200 ml/min. The contrastive result of electric-field distribution, electron density, and gas temperature is also valid and clearly proves the superiority of coherent power-combining to conventional technique in flow field.

OSTI ID:
22600059
Journal Information:
Physics of Plasmas, Vol. 23, Issue 7; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 1070-664X
Country of Publication:
United States
Language:
English