Growth and characterization of Al{sub 2}O{sub 3} films on fluorine functionalized epitaxial graphene
- U.S. Naval Research Laboratory, Washington, DC 20375 (United States)
- College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203 (United States)
- College of Nanoscale Science, SUNY Polytechnic Institute, Albany, New York 12203 (United States)
- Department of Chemistry and Biochemistry, SUNY Oneonta, Oneonta, New York 13820 (United States)
- Brookhaven National Laboratory, Brookhaven, New York 11973 (United States)
Intelligent engineering of graphene-based electronic devices on SiC(0001) requires a better understanding of processes used to deposit gate-dielectric materials on graphene. Recently, Al{sub 2}O{sub 3} dielectrics have been shown to form conformal, pinhole-free thin films by functionalizing the top surface of the graphene with fluorine prior to atomic layer deposition (ALD) of the Al{sub 2}O{sub 3} using a trimethylaluminum (TMA) precursor. In this work, the functionalization and ALD-precursor adsorption processes have been studied with angle-resolved photoelectron spectroscopy, low energy electron diffraction, and X-ray photoelectron spectroscopy. It has been found that the functionalization process has a negligible effect on the electronic structure of the graphene, and that it results in a twofold increase in the adsorption of the ALD-precursor. In situ TMA-dosing and XPS studies were also performed on three different Si(100) substrates that were terminated with H, OH, or dangling Si-bonds. This dosing experiment revealed that OH is required for TMA adsorption. Based on those data along with supportive in situ measurements that showed F-functionalization increases the amount of oxygen (in the form of adsorbed H{sub 2}O) on the surface of the graphene, a model for TMA-adsorption on graphene is proposed that is based on a reaction of a TMA molecule with OH.
- OSTI ID:
- 22598906
- Journal Information:
- Journal of Applied Physics, Vol. 120, Issue 7; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al 2 O 3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide
|
journal | April 2019 |
Recent Advances in Seeded and Seed-Layer-Free Atomic Layer Deposition of High-K Dielectrics on Graphene for Electronics
|
journal | September 2019 |
Similar Records
Atomic imaging and modeling of H{sub 2}O{sub 2}(g) surface passivation, functionalization, and atomic layer deposition nucleation on the Ge(100) surface
Mechanistic study of atomic layer deposition of Al{sub x}Si{sub y}O thin film via in-situ FTIR spectroscopy
Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ADSORPTION
ALUMINIUM OXIDES
DIELECTRIC MATERIALS
DOSES
ELECTRON DIFFRACTION
ELECTRONIC EQUIPMENT
ELECTRONIC STRUCTURE
EPITAXY
FLUORINE
GRAPHENE
SILICON
SILICON CARBIDES
SUBSTRATES
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY