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Title: Theory of photovoltaic characteristics of semiconductor quantum dot solar cells

Abstract

We develop a comprehensive rate equations model for semiconductor quantum dot solar cells (QDSCs). The model is based on the continuity equations with a proper account for quantum dots (QDs). A general analytical expression for the total current density is obtained, and the current-voltage characteristic is studied for several specific situations. The degradation in the open circuit voltage of the QDSC is shown to be due to strong spontaneous radiative recombination in QDs. Due to small absorption coefficient of the QD ensemble, the improvement in the short circuit current density is negligible if only one QD layer is used. If spontaneous radiative recombination would be suppressed in QDs, a QDSC with multiple QD layers would have significantly higher short circuit current density and power conversion efficiency than its conventional counterpart. The effects of photoexcitation of carriers from discrete-energy states in QDs to continuum-energy states are discussed. An extended model, which includes excited states in QDs, is also introduced.

Authors:
 [1];  [2];  [3]
  1. Low Carbon Energy Institute, China University of Mining and Technology, Xuzhou 221116 (China)
  2. (China)
  3. Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061 (United States)
Publication Date:
OSTI Identifier:
22598877
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; CONTINUITY EQUATIONS; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRICAL FAULTS; EXCITED STATES; LAYERS; PHOTOVOLTAIC EFFECT; QUANTUM DOTS; REACTION KINETICS; RECOMBINATION; SEMICONDUCTOR MATERIALS; SOLAR CELLS

Citation Formats

Wu, Yuchang, E-mail: yuchangw@cumt.edu.cn, School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116, and Asryan, Levon V., E-mail: asryan@vt.edu. Theory of photovoltaic characteristics of semiconductor quantum dot solar cells. United States: N. p., 2016. Web. doi:10.1063/1.4961046.
Wu, Yuchang, E-mail: yuchangw@cumt.edu.cn, School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116, & Asryan, Levon V., E-mail: asryan@vt.edu. Theory of photovoltaic characteristics of semiconductor quantum dot solar cells. United States. doi:10.1063/1.4961046.
Wu, Yuchang, E-mail: yuchangw@cumt.edu.cn, School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116, and Asryan, Levon V., E-mail: asryan@vt.edu. 2016. "Theory of photovoltaic characteristics of semiconductor quantum dot solar cells". United States. doi:10.1063/1.4961046.
@article{osti_22598877,
title = {Theory of photovoltaic characteristics of semiconductor quantum dot solar cells},
author = {Wu, Yuchang, E-mail: yuchangw@cumt.edu.cn and School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116 and Asryan, Levon V., E-mail: asryan@vt.edu},
abstractNote = {We develop a comprehensive rate equations model for semiconductor quantum dot solar cells (QDSCs). The model is based on the continuity equations with a proper account for quantum dots (QDs). A general analytical expression for the total current density is obtained, and the current-voltage characteristic is studied for several specific situations. The degradation in the open circuit voltage of the QDSC is shown to be due to strong spontaneous radiative recombination in QDs. Due to small absorption coefficient of the QD ensemble, the improvement in the short circuit current density is negligible if only one QD layer is used. If spontaneous radiative recombination would be suppressed in QDs, a QDSC with multiple QD layers would have significantly higher short circuit current density and power conversion efficiency than its conventional counterpart. The effects of photoexcitation of carriers from discrete-energy states in QDs to continuum-energy states are discussed. An extended model, which includes excited states in QDs, is also introduced.},
doi = {10.1063/1.4961046},
journal = {Journal of Applied Physics},
number = 8,
volume = 120,
place = {United States},
year = 2016,
month = 8
}