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Title: Optical properties of VO{sub 2} films at the phase transition: Influence of substrate and electronic correlations

Abstract

Thin films of VO{sub 2} on different substrates, Al{sub 2}O{sub 3} and SiO{sub 2}/Si, have been prepared and characterized from room temperature up to 360 K. From the band structure in the rutile metallic phase and in the monoclinic insulating phase, the optical properties are calculated and compared with reflection measurements performed as a function of temperatures. Various interband transitions can be assigned and compared with previous speculations. We extract the parameters of the metallic charge carriers that evolve upon crossing the insulator-to-metal phase transition and find effects by the substrate. The influence of electronic correlations becomes obvious at the phase transition.

Authors:
;  [1]; ;  [2]
  1. 1. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart (Germany)
  2. I. Physikalisches Institut, Justus-Liebig Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen (Germany)
Publication Date:
OSTI Identifier:
22598864
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 7; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; ENERGY-LEVEL TRANSITIONS; METALS; MONOCLINIC LATTICES; OPTICAL PROPERTIES; PHASE TRANSFORMATIONS; RUTILE; SILICA; SILICON OXIDES; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; VANADIUM OXIDES

Citation Formats

Peterseim, Tobias, Dressel, Martin, Dietrich, Marc, and Polity, Angelika. Optical properties of VO{sub 2} films at the phase transition: Influence of substrate and electronic correlations. United States: N. p., 2016. Web. doi:10.1063/1.4961406.
Peterseim, Tobias, Dressel, Martin, Dietrich, Marc, & Polity, Angelika. Optical properties of VO{sub 2} films at the phase transition: Influence of substrate and electronic correlations. United States. doi:10.1063/1.4961406.
Peterseim, Tobias, Dressel, Martin, Dietrich, Marc, and Polity, Angelika. Sun . "Optical properties of VO{sub 2} films at the phase transition: Influence of substrate and electronic correlations". United States. doi:10.1063/1.4961406.
@article{osti_22598864,
title = {Optical properties of VO{sub 2} films at the phase transition: Influence of substrate and electronic correlations},
author = {Peterseim, Tobias and Dressel, Martin and Dietrich, Marc and Polity, Angelika},
abstractNote = {Thin films of VO{sub 2} on different substrates, Al{sub 2}O{sub 3} and SiO{sub 2}/Si, have been prepared and characterized from room temperature up to 360 K. From the band structure in the rutile metallic phase and in the monoclinic insulating phase, the optical properties are calculated and compared with reflection measurements performed as a function of temperatures. Various interband transitions can be assigned and compared with previous speculations. We extract the parameters of the metallic charge carriers that evolve upon crossing the insulator-to-metal phase transition and find effects by the substrate. The influence of electronic correlations becomes obvious at the phase transition.},
doi = {10.1063/1.4961406},
journal = {Journal of Applied Physics},
number = 7,
volume = 120,
place = {United States},
year = {Sun Aug 21 00:00:00 EDT 2016},
month = {Sun Aug 21 00:00:00 EDT 2016}
}
  • We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide (VO{sub 2}) film deposited on silicon wafer. The VO{sub 2} phase transition is studied in the mid-infrared region by analyzing the transmittance and the reflectance measurements, and the calculated emissivity. The reflectance has been measured in two configurations: from the side of the VO{sub 2} film and from that of Si wafer. The results show a strong asymmetry between the emissivity in the two configurations, and the fact that the emissivity dynamic range from the silicon side is twice as large than that from themore » VO{sub 2} side. The temperature behaviour of the emissivity during the SMT put into evidence the phenomenon of the anomalous absorption in VO{sub 2}, which has been explained by applying the Maxwell Garnett effective medium approximation theory.« less
  • VO/sub 2/ films with thickness less than 1000 A were studied over the temperature range 20-100/sup 0/C. The electric resistivity was determined by the Four-probe method while the optical properties were examined by ellipsometric techniques.(AIP)
  • Highlights: ► Belt-like VO{sub 2}(A) with a rectangular cross section was synthesized. ► The formation mechanism of belt-like VO{sub 2}(A) was proposed. ► Belt-like VO{sub 2}(M) was prepared by the irreversible transformation of VO{sub 2}(A). ► VO{sub 2}(A) and VO{sub 2}(M) can be used as the optical switching materials. ► VO{sub 2}(A) and VO{sub 2}(M) have good oxidation resistance below 400 °C in air. -- Abstract: Belt-like VO{sub 2}(A) with a rectangular cross section (VA-RCS) was successfully synthesized using V{sub 2}O{sub 5}, H{sub 2}C{sub 2}O{sub 4}·2H{sub 2}O and H{sub 2}O as the starting materials by a facile hydrothermal approach. Somemore » synthetic parameters, such as, the reaction time, reaction temperature and concentration of H{sub 2}C{sub 2}O{sub 4}·2H{sub 2}O, were systematically investigated to control the fabrication of belt-like VA-RCS. The formation mechanism of belt-like VA-RCS was proposed. Subsequently, belt-like VO{sub 2}(M) with a rectangular cross section (VM-RCS) was prepared by the irreversible transformation of VA-RCS at 700 °C for 2 h under the inert atmosphere. The phase transition temperature (T{sub c}) of VA-RCS and VM-RCS was evaluated by DSC test. The optical switching properties of VA-RCS and VM-RCS were studied by the variable-temperature infrared spectra, and it was found that the as-obtained VA-RCS and VM-RCS could be used as the optical switching materials. Furthermore, the oxidation resistance properties of VA-RCS and VM-RCS were investigated by TGA, indicating that they have good thermal stability and oxidation resistance below 400 °C in air.« less
  • The optical absorption spectra of VO/sub 2/ and V/sub 2/O/sub 3/ films were studied using the two-thickness method at room temperature. The experimental results are explained in terms of transitions between energy bands formed by terms of the V/sup 3 +/ ion.(AIP)
  • VO/sub 2/ films were bombarded with N and Ar ions. The color and reflection spectra in the visible region were studied to deduce the effects of the ion irradiation at the metal-semiconductor phase transition temperature.(AIP)