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Title: Characterization of elastic interactions in GaAs/Si composites by optically pumped nuclear magnetic resonance

Abstract

Elastic interactions in GaAs/Si bilayer composite structures were studied by optically pumped nuclear magnetic resonance (OPNMR). The composites were fabricated by epoxy bonding of a single crystal of GaAs to a single crystal of Si at 373 K followed by selective chemical etching of the GaAs at room temperature to obtain a series of samples with GaAs thickness varying from 37 μm to 635 μm, while the Si support thickness remained fixed at 650 μm. Upon cooling to below 10 K, a biaxial tensile stress developed in the GaAs film due to differential thermal contraction. The strain perpendicular to the plane of the bilayer and localized near the surface of the GaAs was deduced from the quadrupolar splitting of the Gallium-71 OPNMR resonance. Strain relaxation by bowing of the composite was observed to an extent that depended on the relative thickness of the GaAs and Si layers. The variation of the strain with GaAs layer thickness was found to be in good agreement with a general analytical model for the elastic relationships in composite media.

Authors:
; ; ;  [1]
  1. Department of Physics, University of Florida, Gainesville, Florida 32611 (United States)
Publication Date:
OSTI Identifier:
22598841
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 120; Journal Issue: 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BONDING; BOWING; COOLING; EPOXIDES; ETCHING; FILMS; GALLIUM 71; GALLIUM ARSENIDES; INTERACTIONS; LAYERS; MONOCRYSTALS; NUCLEAR MAGNETIC RESONANCE; RELAXATION; SILICON; STRAINS; STRESSES; SURFACES; TEMPERATURE RANGE 0273-0400 K; THICKNESS

Citation Formats

Wood, Ryan M., Tokarski, John T., McCarthy, Lauren A., Bowers, Clifford R., E-mail: bowers@chem.ufl.edu, and Stanton, Christopher J. Characterization of elastic interactions in GaAs/Si composites by optically pumped nuclear magnetic resonance. United States: N. p., 2016. Web. doi:10.1063/1.4961427.
Wood, Ryan M., Tokarski, John T., McCarthy, Lauren A., Bowers, Clifford R., E-mail: bowers@chem.ufl.edu, & Stanton, Christopher J. Characterization of elastic interactions in GaAs/Si composites by optically pumped nuclear magnetic resonance. United States. doi:10.1063/1.4961427.
Wood, Ryan M., Tokarski, John T., McCarthy, Lauren A., Bowers, Clifford R., E-mail: bowers@chem.ufl.edu, and Stanton, Christopher J. Sun . "Characterization of elastic interactions in GaAs/Si composites by optically pumped nuclear magnetic resonance". United States. doi:10.1063/1.4961427.
@article{osti_22598841,
title = {Characterization of elastic interactions in GaAs/Si composites by optically pumped nuclear magnetic resonance},
author = {Wood, Ryan M. and Tokarski, John T. and McCarthy, Lauren A. and Bowers, Clifford R., E-mail: bowers@chem.ufl.edu and Stanton, Christopher J.},
abstractNote = {Elastic interactions in GaAs/Si bilayer composite structures were studied by optically pumped nuclear magnetic resonance (OPNMR). The composites were fabricated by epoxy bonding of a single crystal of GaAs to a single crystal of Si at 373 K followed by selective chemical etching of the GaAs at room temperature to obtain a series of samples with GaAs thickness varying from 37 μm to 635 μm, while the Si support thickness remained fixed at 650 μm. Upon cooling to below 10 K, a biaxial tensile stress developed in the GaAs film due to differential thermal contraction. The strain perpendicular to the plane of the bilayer and localized near the surface of the GaAs was deduced from the quadrupolar splitting of the Gallium-71 OPNMR resonance. Strain relaxation by bowing of the composite was observed to an extent that depended on the relative thickness of the GaAs and Si layers. The variation of the strain with GaAs layer thickness was found to be in good agreement with a general analytical model for the elastic relationships in composite media.},
doi = {10.1063/1.4961427},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 8,
volume = 120,
place = {United States},
year = {2016},
month = {8}
}