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Title: An analysis of the growth of silver catalyzed In{sub x}Ga{sub 1−x}As nanowires on Si (100) by metal organic chemical vapor deposition

Abstract

A model is proposed here to understand the nucleation of III–V semiconductor nanowires (NW). Whereas the classical nucleation theory is not adequately sufficient in explaining the evolution of the shape of the NWs under different chemical environment such as flow rate or partial pressure of the precursors, the effect of adsorption and desorption mediated growth, and diffusion limited growth are taken into account to explain the morphology and the crystal structure of In{sub x}Ga{sub 1−x}As nanowires (NW) on Silicon (100) substrates grown by a metalorganic chemical vapor deposition technique. It is found that the monolayer nucleus that originates at the triple phase line covers the entire nucleus-substrate (NS) region at a specific level of supersaturation and there are cases when the monolayer covers a certain fraction of the NS interface. When the monolayer covers the total NS interface, NWs grow with perfect cylindrical morphology and whenever a fraction of the interface is covered by the nucleus, the NWs become curved as observed from high resolution transmission electron microscopy images. The supersaturation, i.e., the chemical potential is found to be governed by the concentration of precursors into the molten silver which in the present case is taken as a catalyst. Ourmore » study provides new insights into the growth of ternary NWs which will be helpful in understanding the behavior of growth of different semiconducting NWs.« less

Authors:
;  [1]; ;  [2]
  1. Materials Science Centre, Indian Institute of Technology, Kharagpur 721302 (India)
  2. Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Kolkata 700098 (India)
Publication Date:
OSTI Identifier:
22598835
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION SPECTROSCOPY; ADSORPTION; CHEMICAL VAPOR DEPOSITION; CONCENTRATION RATIO; CRYSTAL STRUCTURE; CYLINDRICAL CONFIGURATION; DESORPTION; IMAGES; INTERFACES; MORPHOLOGY; NANOWIRES; ORGANOMETALLIC COMPOUNDS; PARTIAL PRESSURE; SEMICONDUCTOR MATERIALS; SILICON; SILVER; SUBSTRATES; SUPERSATURATION; TRANSMISSION ELECTRON MICROSCOPY; X-RAY SPECTROSCOPY

Citation Formats

Sarkar, K., Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in, Palit, M., and Chattopadhyay, S. An analysis of the growth of silver catalyzed In{sub x}Ga{sub 1−x}As nanowires on Si (100) by metal organic chemical vapor deposition. United States: N. p., 2016. Web. doi:10.1063/1.4961733.
Sarkar, K., Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in, Palit, M., & Chattopadhyay, S. An analysis of the growth of silver catalyzed In{sub x}Ga{sub 1−x}As nanowires on Si (100) by metal organic chemical vapor deposition. United States. doi:10.1063/1.4961733.
Sarkar, K., Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in, Palit, M., and Chattopadhyay, S. Sun . "An analysis of the growth of silver catalyzed In{sub x}Ga{sub 1−x}As nanowires on Si (100) by metal organic chemical vapor deposition". United States. doi:10.1063/1.4961733.
@article{osti_22598835,
title = {An analysis of the growth of silver catalyzed In{sub x}Ga{sub 1−x}As nanowires on Si (100) by metal organic chemical vapor deposition},
author = {Sarkar, K. and Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in and Palit, M. and Chattopadhyay, S.},
abstractNote = {A model is proposed here to understand the nucleation of III–V semiconductor nanowires (NW). Whereas the classical nucleation theory is not adequately sufficient in explaining the evolution of the shape of the NWs under different chemical environment such as flow rate or partial pressure of the precursors, the effect of adsorption and desorption mediated growth, and diffusion limited growth are taken into account to explain the morphology and the crystal structure of In{sub x}Ga{sub 1−x}As nanowires (NW) on Silicon (100) substrates grown by a metalorganic chemical vapor deposition technique. It is found that the monolayer nucleus that originates at the triple phase line covers the entire nucleus-substrate (NS) region at a specific level of supersaturation and there are cases when the monolayer covers a certain fraction of the NS interface. When the monolayer covers the total NS interface, NWs grow with perfect cylindrical morphology and whenever a fraction of the interface is covered by the nucleus, the NWs become curved as observed from high resolution transmission electron microscopy images. The supersaturation, i.e., the chemical potential is found to be governed by the concentration of precursors into the molten silver which in the present case is taken as a catalyst. Our study provides new insights into the growth of ternary NWs which will be helpful in understanding the behavior of growth of different semiconducting NWs.},
doi = {10.1063/1.4961733},
journal = {Journal of Applied Physics},
number = 8,
volume = 120,
place = {United States},
year = {Sun Aug 28 00:00:00 EDT 2016},
month = {Sun Aug 28 00:00:00 EDT 2016}
}