High pressure and time resolved studies of optical properties of ntype doped GaN/AlN multiquantum wells: Experimental and theoretical analysis
Abstract
Highpressure and timeresolved studies of the optical emission from ntype doped GaN/AlN multiquantumwells (MQWs) with various well thicknesses are analysed in comparison with ab initio calculations of the electronic (band structure, density of states) and optical (emission energies and their pressure derivatives, oscillator strength) properties. The optical properties of GaN/AlN MQWs are strongly affected by quantum confinement and polarizationinduced electric fields. Thus, the photoluminescence (PL) peak energy decreases by over 1 eV with quantum well (QW) thicknesses increasing from 1 to 6 nm. Furthermore, the respective PL decay times increased from about 1 ns up to 10 μs, due to the strong builtin electric field. It was also shown that the band gap pressure coefficients are significantly reduced in MQWs as compared to bulk AlN and GaN crystals. Such coefficients are strongly dependent on the geometric factors such as the thickness of the wells and barriers. The transition energies, their oscillator strength, and pressure dependence are modeled for tetragonally strained structures of the same geometry using a full tensorial representation of the strain in the MQWs under external pressure. These MQWs were simulated directly using density functional theory calculations, taking into account two different systems: the semiinsulating QWs and the ndoped QWs with themore »
 Authors:
 Institute of Physics Polish Academy of Sciences, Aleja Lotnikow 32/46, PL02668 Warsaw (Poland)
 (Poland)
 Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01142 Warsaw (Poland)
 University of Warsaw, Faculty of Physics, Pasteura 5, 02093 Warsaw (Poland)
 Université GrenobleAlpes, 38000 Grenoble (France)
 (France)
 Publication Date:
 OSTI Identifier:
 22598822
 Resource Type:
 Journal Article
 Resource Relation:
 Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 9; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
 Country of Publication:
 United States
 Language:
 English
 Subject:
 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; COMPARATIVE EVALUATIONS; CRYSTAL DEFECTS; CRYSTALS; DENSITY FUNCTIONAL METHOD; DENSITY OF STATES; DOPED MATERIALS; ELECTRIC FIELDS; GALLIUM NITRIDES; NONLINEAR PROBLEMS; NTYPE CONDUCTORS; OPTICAL PROPERTIES; OSCILLATORS; PHOTOLUMINESCENCE; PRESSURE COEFFICIENT; PRESSURE DEPENDENCE; QUANTUM WELLS; THICKNESS; TIME RESOLUTION
Citation Formats
Kaminska, A., Cardinal Stefan Wyszynski University, College of Science, Department of Mathematics and Natural Sciences, Dewajtis 5, 01815 Warsaw, Jankowski, D., Sobczak, K., Strak, P., Sakowski, K., Grzanka, E., Krukowski, S., Korona, K. P., Beeler, M., Monroy, E., CEA Grenoble, INACPHELIQS, 17 av. des Martyrs, 38000 Grenoble, Borysiuk, J., and University of Warsaw, Faculty of Physics, Pasteura 5, 02093 Warsaw. High pressure and time resolved studies of optical properties of ntype doped GaN/AlN multiquantum wells: Experimental and theoretical analysis. United States: N. p., 2016.
Web. doi:10.1063/1.4962282.
Kaminska, A., Cardinal Stefan Wyszynski University, College of Science, Department of Mathematics and Natural Sciences, Dewajtis 5, 01815 Warsaw, Jankowski, D., Sobczak, K., Strak, P., Sakowski, K., Grzanka, E., Krukowski, S., Korona, K. P., Beeler, M., Monroy, E., CEA Grenoble, INACPHELIQS, 17 av. des Martyrs, 38000 Grenoble, Borysiuk, J., & University of Warsaw, Faculty of Physics, Pasteura 5, 02093 Warsaw. High pressure and time resolved studies of optical properties of ntype doped GaN/AlN multiquantum wells: Experimental and theoretical analysis. United States. doi:10.1063/1.4962282.
Kaminska, A., Cardinal Stefan Wyszynski University, College of Science, Department of Mathematics and Natural Sciences, Dewajtis 5, 01815 Warsaw, Jankowski, D., Sobczak, K., Strak, P., Sakowski, K., Grzanka, E., Krukowski, S., Korona, K. P., Beeler, M., Monroy, E., CEA Grenoble, INACPHELIQS, 17 av. des Martyrs, 38000 Grenoble, Borysiuk, J., and University of Warsaw, Faculty of Physics, Pasteura 5, 02093 Warsaw. 2016.
"High pressure and time resolved studies of optical properties of ntype doped GaN/AlN multiquantum wells: Experimental and theoretical analysis". United States.
doi:10.1063/1.4962282.
@article{osti_22598822,
title = {High pressure and time resolved studies of optical properties of ntype doped GaN/AlN multiquantum wells: Experimental and theoretical analysis},
author = {Kaminska, A. and Cardinal Stefan Wyszynski University, College of Science, Department of Mathematics and Natural Sciences, Dewajtis 5, 01815 Warsaw and Jankowski, D. and Sobczak, K. and Strak, P. and Sakowski, K. and Grzanka, E. and Krukowski, S. and Korona, K. P. and Beeler, M. and Monroy, E. and CEA Grenoble, INACPHELIQS, 17 av. des Martyrs, 38000 Grenoble and Borysiuk, J. and University of Warsaw, Faculty of Physics, Pasteura 5, 02093 Warsaw},
abstractNote = {Highpressure and timeresolved studies of the optical emission from ntype doped GaN/AlN multiquantumwells (MQWs) with various well thicknesses are analysed in comparison with ab initio calculations of the electronic (band structure, density of states) and optical (emission energies and their pressure derivatives, oscillator strength) properties. The optical properties of GaN/AlN MQWs are strongly affected by quantum confinement and polarizationinduced electric fields. Thus, the photoluminescence (PL) peak energy decreases by over 1 eV with quantum well (QW) thicknesses increasing from 1 to 6 nm. Furthermore, the respective PL decay times increased from about 1 ns up to 10 μs, due to the strong builtin electric field. It was also shown that the band gap pressure coefficients are significantly reduced in MQWs as compared to bulk AlN and GaN crystals. Such coefficients are strongly dependent on the geometric factors such as the thickness of the wells and barriers. The transition energies, their oscillator strength, and pressure dependence are modeled for tetragonally strained structures of the same geometry using a full tensorial representation of the strain in the MQWs under external pressure. These MQWs were simulated directly using density functional theory calculations, taking into account two different systems: the semiinsulating QWs and the ndoped QWs with the same charge density as in the experimental samples. Such an approach allowed an assessment of the impact of ntype doping on optical properties of GaN/AlN MQWs. We find a good agreement between these two approaches and between theory and experimental results. We can therefore confirm that the nonlinear effects induced by the tetragonal strain related to the lattice mismatch between the substrates and the polar MQWs are responsible for the drastic decrease of the pressure coefficients observed experimentally.},
doi = {10.1063/1.4962282},
journal = {Journal of Applied Physics},
number = 9,
volume = 120,
place = {United States},
year = 2016,
month = 9
}

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