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Title: The annealing effects on the micro-structure and properties of RuMoC films as seedless barrier for advanced Cu metallization

Abstract

100 nm thick RuMoC films and 5 nm thick RuMoC films with Cu capping have been deposited on Si(111) by magnetron co-sputtering with Ru and MoC confocal targets. The samples were subsequently annealed at temperatures ranging from 450 to 650 °C in vacuum at a pressure of 3 × 10{sup −4} Pa to study the annealing effects on the microstructures and properties of RuMoC films for advanced seedless Cu metallization applications. The sheet resistances, residual oxygen contents, and microstructures of the RuMoC films have close correlation with the doping contents of Mo and C, which can be easily controlled by the deposition power ratio of MoC versus Ru targets (DPR). When DPR was 0.5, amorphous RuMoC film (marked as RuMoC II) with low sheet resistances and residual oxygen contents was obtained. The fundamental relationship between the annealing temperatures with the microstructures and properties of the RuMoC films was investigated, and a critical temperature point was revealed at about 550 °C where the components and microstructures of the RuMoC II films changed obviously. Results indicated that below 550 °C, the RuMoC II films remained amorphous due to the well-preserved C-Ru and C-Mo bonds. However, above 550 °C, the microstructures of RuMoC II films transformed from amorphous to nano-composite structuremore » due to the breakage of Ru-C bonds, while the supersaturated solid solution MoC segregated out along the grain boundaries of Ru, thus hindering the diffusion of Cu and O atoms. This is the main mechanism of the excellent thermal stability of the RuMoC films after annealing at high temperatures. The results indicated great prospects of amorphous RuMoC films in advanced seedless Cu metallization applications.« less

Authors:
;  [1]; ; ;  [2];  [3];  [4]
  1. Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064 (China)
  2. Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences, Shenzhen 518055 (China)
  3. (China)
  4. Institut d'Electronique Fondamentale, CNRS-Université Paris Sud UMR 8622, 91405 Orsay (France)
Publication Date:
OSTI Identifier:
22598817
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 9; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ATOMS; CARBON; COPPER; CRITICAL TEMPERATURE; FILMS; GRAIN BOUNDARIES; MAGNETRONS; MOLYBDENUM; MOLYBDENUM CARBIDES; OXYGEN; RUTHENIUM; SHEETS; SOLID SOLUTIONS; SPUTTERING; TEMPERATURE RANGE 0400-1000 K

Citation Formats

Zou, Jianxiong, Liu, Bo, E-mail: liubo2009@scu.edu.cn, E-mail: gh.jiao@siat.ac.cn, Jiao, Guohua, E-mail: liubo2009@scu.edu.cn, E-mail: gh.jiao@siat.ac.cn, Lu, Yuanfu, Dong, Yuming, The Chinese University of Hong Kong, Hong Kong, and Li, Qiran. The annealing effects on the micro-structure and properties of RuMoC films as seedless barrier for advanced Cu metallization. United States: N. p., 2016. Web. doi:10.1063/1.4962011.
Zou, Jianxiong, Liu, Bo, E-mail: liubo2009@scu.edu.cn, E-mail: gh.jiao@siat.ac.cn, Jiao, Guohua, E-mail: liubo2009@scu.edu.cn, E-mail: gh.jiao@siat.ac.cn, Lu, Yuanfu, Dong, Yuming, The Chinese University of Hong Kong, Hong Kong, & Li, Qiran. The annealing effects on the micro-structure and properties of RuMoC films as seedless barrier for advanced Cu metallization. United States. doi:10.1063/1.4962011.
Zou, Jianxiong, Liu, Bo, E-mail: liubo2009@scu.edu.cn, E-mail: gh.jiao@siat.ac.cn, Jiao, Guohua, E-mail: liubo2009@scu.edu.cn, E-mail: gh.jiao@siat.ac.cn, Lu, Yuanfu, Dong, Yuming, The Chinese University of Hong Kong, Hong Kong, and Li, Qiran. Wed . "The annealing effects on the micro-structure and properties of RuMoC films as seedless barrier for advanced Cu metallization". United States. doi:10.1063/1.4962011.
@article{osti_22598817,
title = {The annealing effects on the micro-structure and properties of RuMoC films as seedless barrier for advanced Cu metallization},
author = {Zou, Jianxiong and Liu, Bo, E-mail: liubo2009@scu.edu.cn, E-mail: gh.jiao@siat.ac.cn and Jiao, Guohua, E-mail: liubo2009@scu.edu.cn, E-mail: gh.jiao@siat.ac.cn and Lu, Yuanfu and Dong, Yuming and The Chinese University of Hong Kong, Hong Kong and Li, Qiran},
abstractNote = {100 nm thick RuMoC films and 5 nm thick RuMoC films with Cu capping have been deposited on Si(111) by magnetron co-sputtering with Ru and MoC confocal targets. The samples were subsequently annealed at temperatures ranging from 450 to 650 °C in vacuum at a pressure of 3 × 10{sup −4} Pa to study the annealing effects on the microstructures and properties of RuMoC films for advanced seedless Cu metallization applications. The sheet resistances, residual oxygen contents, and microstructures of the RuMoC films have close correlation with the doping contents of Mo and C, which can be easily controlled by the deposition power ratio of MoC versus Ru targets (DPR). When DPR was 0.5, amorphous RuMoC film (marked as RuMoC II) with low sheet resistances and residual oxygen contents was obtained. The fundamental relationship between the annealing temperatures with the microstructures and properties of the RuMoC films was investigated, and a critical temperature point was revealed at about 550 °C where the components and microstructures of the RuMoC II films changed obviously. Results indicated that below 550 °C, the RuMoC II films remained amorphous due to the well-preserved C-Ru and C-Mo bonds. However, above 550 °C, the microstructures of RuMoC II films transformed from amorphous to nano-composite structure due to the breakage of Ru-C bonds, while the supersaturated solid solution MoC segregated out along the grain boundaries of Ru, thus hindering the diffusion of Cu and O atoms. This is the main mechanism of the excellent thermal stability of the RuMoC films after annealing at high temperatures. The results indicated great prospects of amorphous RuMoC films in advanced seedless Cu metallization applications.},
doi = {10.1063/1.4962011},
journal = {Journal of Applied Physics},
number = 9,
volume = 120,
place = {United States},
year = {Wed Sep 07 00:00:00 EDT 2016},
month = {Wed Sep 07 00:00:00 EDT 2016}
}