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Title: Influence of C or In buffer layer on photoluminescence behaviour of ultrathin ZnO film

Abstract

We study the effect of the indium or carbon buffer layer on the photoluminescence (PL) property of ZnO ultrathin films deposited on a Si(100) substrate. The surface morphology of the films obtained using scanning tunnelling microscopy shows spherical shaped ZnO nanoparticles of size ∼8 nm in ZnO/C/Si and ∼22 nm in ZnO/Si samples, while the ZnO/In/Si sample shows elliptical shaped ZnO particles. Further, the ZnO/C/Si sample shows densely packed ZnO nanoparticles in comparison with other samples. Strong band edge emission has been observed in the presence of In or C buffer layer, whereas the ZnO/Si sample exhibits poor PL emission. The influence of C and In buffer layers on the PL behaviour of ZnO films is studied in detail using temperature dependent PL measurements in the range of 4 K–300 K. The ZnO/C/Si sample exhibits a multi-fold enhancement in the PL emission intensity with well-resolved free and bound exciton emission lines. Our experimental results imply that the ZnO films deposited on the C buffer layer showed higher particle density and better exciton emission desired for optoelectronic applications.

Authors:
; ; ; ;  [1]
  1. Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India)
Publication Date:
OSTI Identifier:
22598814
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 120; Journal Issue: 9; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BUFFERS; CARBON; COMPARATIVE EVALUATIONS; DENSITY; DEPOSITS; INDIUM; LAYERS; MORPHOLOGY; NANOPARTICLES; PHOTOLUMINESCENCE; SCANNING TUNNELING MICROSCOPY; SPHERICAL CONFIGURATION; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE; THIN FILMS; TUNNEL EFFECT; ZINC OXIDES

Citation Formats

Saravanan, K., E-mail: saravanan@igcar.gov.in, Jayalakshmi, G., Krishnan, R., Sundaravel, B., and Panigrahi, B. K. Influence of C or In buffer layer on photoluminescence behaviour of ultrathin ZnO film. United States: N. p., 2016. Web. doi:10.1063/1.4962006.
Saravanan, K., E-mail: saravanan@igcar.gov.in, Jayalakshmi, G., Krishnan, R., Sundaravel, B., & Panigrahi, B. K. Influence of C or In buffer layer on photoluminescence behaviour of ultrathin ZnO film. United States. doi:10.1063/1.4962006.
Saravanan, K., E-mail: saravanan@igcar.gov.in, Jayalakshmi, G., Krishnan, R., Sundaravel, B., and Panigrahi, B. K. Wed . "Influence of C or In buffer layer on photoluminescence behaviour of ultrathin ZnO film". United States. doi:10.1063/1.4962006.
@article{osti_22598814,
title = {Influence of C or In buffer layer on photoluminescence behaviour of ultrathin ZnO film},
author = {Saravanan, K., E-mail: saravanan@igcar.gov.in and Jayalakshmi, G. and Krishnan, R. and Sundaravel, B. and Panigrahi, B. K.},
abstractNote = {We study the effect of the indium or carbon buffer layer on the photoluminescence (PL) property of ZnO ultrathin films deposited on a Si(100) substrate. The surface morphology of the films obtained using scanning tunnelling microscopy shows spherical shaped ZnO nanoparticles of size ∼8 nm in ZnO/C/Si and ∼22 nm in ZnO/Si samples, while the ZnO/In/Si sample shows elliptical shaped ZnO particles. Further, the ZnO/C/Si sample shows densely packed ZnO nanoparticles in comparison with other samples. Strong band edge emission has been observed in the presence of In or C buffer layer, whereas the ZnO/Si sample exhibits poor PL emission. The influence of C and In buffer layers on the PL behaviour of ZnO films is studied in detail using temperature dependent PL measurements in the range of 4 K–300 K. The ZnO/C/Si sample exhibits a multi-fold enhancement in the PL emission intensity with well-resolved free and bound exciton emission lines. Our experimental results imply that the ZnO films deposited on the C buffer layer showed higher particle density and better exciton emission desired for optoelectronic applications.},
doi = {10.1063/1.4962006},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 120,
place = {United States},
year = {2016},
month = {9}
}