skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electric field dynamics in nitride structures containing quaternary alloy (Al, In, Ga)N

Abstract

Molecular beam epitaxy growth and basic physical properties of quaternary AlInGaN layers, sufficiently thick for construction of electron blocking layers (EBL), embedded in ternary InGaN layers are presented. Transmission electron microscopy (TEM) measurement revealed good crystallographic structure and compositional uniformity of the quaternary layers contained in other nitride layers, which are typical for construction of nitride based devices. The AlInGaN layer was epitaxially compatible to InGaN matrix, strained, and no strain related dislocation creation was observed. The strain penetrated for limited depth, below 3 nm, even for relatively high content of indium (7%). For lower indium content (0.6%), the strain was below the detection limit by TEM strain analysis. The structures containing quaternary AlInGaN layers were studied by time dependent photoluminescence (PL) at different temperatures and excitation powers. It was shown that PL spectra contain three peaks: high energy donor bound exciton peak from the bulk GaN (DX GaN) and the two peaks (A and B) from InGaN layers. No emission from quaternary AlInGaN layers was observed. An accumulation of electrons on the EBL interface in high-In sample and formation of 2D electron gas (2DEG) was detected. The dynamics of 2DEG was studied by time resolved luminescence revealing strong dependence ofmore » emission energy on the 2DEG concentration. Theoretical calculations as well as power-dependence and temperature-dependence analysis showed the importance of electric field inside the structure. At the interface, the field was screened by carriers and could be changed by illumination. From these measurements, the dynamics of electric field was described as the discharge of carriers accumulated on the EBL.« less

Authors:
 [1];  [2]; ; ;  [3];  [4];  [2];  [4];  [1];  [3];  [2];  [1];  [2]
  1. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)
  2. (Poland)
  3. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland)
  4. Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw (Poland)
Publication Date:
OSTI Identifier:
22597895
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CONCENTRATION RATIO; CRYSTALLOGRAPHY; DEPLETION LAYER; DISLOCATIONS; ELECTRIC FIELDS; ELECTRONS; GALLIUM NITRIDES; INDIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PEAKS; PHOTOLUMINESCENCE; PHYSICAL PROPERTIES; QUATERNARY ALLOY SYSTEMS; STRAINS; TEMPERATURE DEPENDENCE; TIME DEPENDENCE; TIME RESOLUTION; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Borysiuk, J., E-mail: jolanta.borysiuk@ifpan.edu.pl, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Sakowski, K., Muziol, G., Krukowski, S., Dróżdż, P., Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Korona, K. P., Sobczak, K., Skierbiszewski, C., TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Kaminska, A., and Department of Mathematics and Natural Sciences, College of Science, Cardinal Stefan Wyszynski University, Dewajtis 5, 01-815 Warsaw. Electric field dynamics in nitride structures containing quaternary alloy (Al, In, Ga)N. United States: N. p., 2016. Web. doi:10.1063/1.4955077.
Borysiuk, J., E-mail: jolanta.borysiuk@ifpan.edu.pl, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Sakowski, K., Muziol, G., Krukowski, S., Dróżdż, P., Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Korona, K. P., Sobczak, K., Skierbiszewski, C., TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Kaminska, A., & Department of Mathematics and Natural Sciences, College of Science, Cardinal Stefan Wyszynski University, Dewajtis 5, 01-815 Warsaw. Electric field dynamics in nitride structures containing quaternary alloy (Al, In, Ga)N. United States. doi:10.1063/1.4955077.
Borysiuk, J., E-mail: jolanta.borysiuk@ifpan.edu.pl, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Sakowski, K., Muziol, G., Krukowski, S., Dróżdż, P., Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Korona, K. P., Sobczak, K., Skierbiszewski, C., TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Kaminska, A., and Department of Mathematics and Natural Sciences, College of Science, Cardinal Stefan Wyszynski University, Dewajtis 5, 01-815 Warsaw. Thu . "Electric field dynamics in nitride structures containing quaternary alloy (Al, In, Ga)N". United States. doi:10.1063/1.4955077.
@article{osti_22597895,
title = {Electric field dynamics in nitride structures containing quaternary alloy (Al, In, Ga)N},
author = {Borysiuk, J., E-mail: jolanta.borysiuk@ifpan.edu.pl and Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw and Sakowski, K. and Muziol, G. and Krukowski, S. and Dróżdż, P. and Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw and Korona, K. P. and Sobczak, K. and Skierbiszewski, C. and TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw and Kaminska, A. and Department of Mathematics and Natural Sciences, College of Science, Cardinal Stefan Wyszynski University, Dewajtis 5, 01-815 Warsaw},
abstractNote = {Molecular beam epitaxy growth and basic physical properties of quaternary AlInGaN layers, sufficiently thick for construction of electron blocking layers (EBL), embedded in ternary InGaN layers are presented. Transmission electron microscopy (TEM) measurement revealed good crystallographic structure and compositional uniformity of the quaternary layers contained in other nitride layers, which are typical for construction of nitride based devices. The AlInGaN layer was epitaxially compatible to InGaN matrix, strained, and no strain related dislocation creation was observed. The strain penetrated for limited depth, below 3 nm, even for relatively high content of indium (7%). For lower indium content (0.6%), the strain was below the detection limit by TEM strain analysis. The structures containing quaternary AlInGaN layers were studied by time dependent photoluminescence (PL) at different temperatures and excitation powers. It was shown that PL spectra contain three peaks: high energy donor bound exciton peak from the bulk GaN (DX GaN) and the two peaks (A and B) from InGaN layers. No emission from quaternary AlInGaN layers was observed. An accumulation of electrons on the EBL interface in high-In sample and formation of 2D electron gas (2DEG) was detected. The dynamics of 2DEG was studied by time resolved luminescence revealing strong dependence of emission energy on the 2DEG concentration. Theoretical calculations as well as power-dependence and temperature-dependence analysis showed the importance of electric field inside the structure. At the interface, the field was screened by carriers and could be changed by illumination. From these measurements, the dynamics of electric field was described as the discharge of carriers accumulated on the EBL.},
doi = {10.1063/1.4955077},
journal = {Journal of Applied Physics},
number = 1,
volume = 120,
place = {United States},
year = {Thu Jul 07 00:00:00 EDT 2016},
month = {Thu Jul 07 00:00:00 EDT 2016}
}