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Title: Measurement of minority carrier diffusion lengths in GaAs nanowires by a nanoprobe technique

Abstract

Minority carrier diffusion lengths in both p-type and n-type GaAs nanowires were studied using electron beam induced current by means of a nanoprobe technique without lithographic processing. The diffusion lengths were determined for Au/GaAs rectifying junctions as well as axial p-n junctions. By incorporating a thin lattice-matched InGaP passivating shell, a 2-fold enhancement in the minority carrier diffusion lengths and one order of magnitude reduction in the surface recombination velocity were achieved.

Authors:
;  [1]
  1. Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6 (Canada)
Publication Date:
OSTI Identifier:
22597887
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; CONNECTORS; DIFFUSION; DIFFUSION LENGTH; ELECTRON BEAMS; GALLIUM ARSENIDES; GOLD; NANOWIRES; N-TYPE CONDUCTORS; P-N JUNCTIONS; SCANNING ELECTRON MICROSCOPY

Citation Formats

Darbandi, A., and Watkins, S. P., E-mail: simonw@sfu.ca. Measurement of minority carrier diffusion lengths in GaAs nanowires by a nanoprobe technique. United States: N. p., 2016. Web. doi:10.1063/1.4955136.
Darbandi, A., & Watkins, S. P., E-mail: simonw@sfu.ca. Measurement of minority carrier diffusion lengths in GaAs nanowires by a nanoprobe technique. United States. doi:10.1063/1.4955136.
Darbandi, A., and Watkins, S. P., E-mail: simonw@sfu.ca. Thu . "Measurement of minority carrier diffusion lengths in GaAs nanowires by a nanoprobe technique". United States. doi:10.1063/1.4955136.
@article{osti_22597887,
title = {Measurement of minority carrier diffusion lengths in GaAs nanowires by a nanoprobe technique},
author = {Darbandi, A. and Watkins, S. P., E-mail: simonw@sfu.ca},
abstractNote = {Minority carrier diffusion lengths in both p-type and n-type GaAs nanowires were studied using electron beam induced current by means of a nanoprobe technique without lithographic processing. The diffusion lengths were determined for Au/GaAs rectifying junctions as well as axial p-n junctions. By incorporating a thin lattice-matched InGaP passivating shell, a 2-fold enhancement in the minority carrier diffusion lengths and one order of magnitude reduction in the surface recombination velocity were achieved.},
doi = {10.1063/1.4955136},
journal = {Journal of Applied Physics},
number = 1,
volume = 120,
place = {United States},
year = {Thu Jul 07 00:00:00 EDT 2016},
month = {Thu Jul 07 00:00:00 EDT 2016}
}