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Title: Measurement of minority carrier diffusion lengths in GaAs nanowires by a nanoprobe technique

Abstract

Minority carrier diffusion lengths in both p-type and n-type GaAs nanowires were studied using electron beam induced current by means of a nanoprobe technique without lithographic processing. The diffusion lengths were determined for Au/GaAs rectifying junctions as well as axial p-n junctions. By incorporating a thin lattice-matched InGaP passivating shell, a 2-fold enhancement in the minority carrier diffusion lengths and one order of magnitude reduction in the surface recombination velocity were achieved.

Authors:
;  [1]
  1. Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6 (Canada)
Publication Date:
OSTI Identifier:
22597887
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; CONNECTORS; DIFFUSION; DIFFUSION LENGTH; ELECTRON BEAMS; GALLIUM ARSENIDES; GOLD; NANOWIRES; N-TYPE CONDUCTORS; P-N JUNCTIONS; SCANNING ELECTRON MICROSCOPY

Citation Formats

Darbandi, A., and Watkins, S. P., E-mail: simonw@sfu.ca. Measurement of minority carrier diffusion lengths in GaAs nanowires by a nanoprobe technique. United States: N. p., 2016. Web. doi:10.1063/1.4955136.
Darbandi, A., & Watkins, S. P., E-mail: simonw@sfu.ca. Measurement of minority carrier diffusion lengths in GaAs nanowires by a nanoprobe technique. United States. doi:10.1063/1.4955136.
Darbandi, A., and Watkins, S. P., E-mail: simonw@sfu.ca. 2016. "Measurement of minority carrier diffusion lengths in GaAs nanowires by a nanoprobe technique". United States. doi:10.1063/1.4955136.
@article{osti_22597887,
title = {Measurement of minority carrier diffusion lengths in GaAs nanowires by a nanoprobe technique},
author = {Darbandi, A. and Watkins, S. P., E-mail: simonw@sfu.ca},
abstractNote = {Minority carrier diffusion lengths in both p-type and n-type GaAs nanowires were studied using electron beam induced current by means of a nanoprobe technique without lithographic processing. The diffusion lengths were determined for Au/GaAs rectifying junctions as well as axial p-n junctions. By incorporating a thin lattice-matched InGaP passivating shell, a 2-fold enhancement in the minority carrier diffusion lengths and one order of magnitude reduction in the surface recombination velocity were achieved.},
doi = {10.1063/1.4955136},
journal = {Journal of Applied Physics},
number = 1,
volume = 120,
place = {United States},
year = 2016,
month = 7
}
  • We have made the first measurements of the minority-carrier diffusion lengths L/sub parallel/ and L/sub perpendicular/ respectively in both n- and p- type GaP/GaAs/sub x/P/sub 1-x/ <100> strained-layer superlattices (SLS's) in directions parallel and perpendicular to the interfaces. Using room-temperature optical techniques, we find that L/sub perpendicular/roughly-equal0.1 ..mu..m, which is more than an order of magnitude smaller than L/sub parallel/roughly-equal1.5 ..mu..m. The latter is comparable to that measured in the bulk materials which comprise the SLS layers, while the former demonstrates the existence of large potential barriers in both the conduction and valence bands.
  • One of the indicators which determine a material's potential for use as a solar cell is the minority carrier diffusion length (L/sub D/) of the material. To determine L/sub D/ a surface photovoltage (SPV) technique is used. This method is dependent upon an accurate knowledge of the optical absorption coefficient as function of wavelength. The results for the absorption coefficients for various types of silicon sheet material are compared to those previously used in the two models. The resultant effect upon the diffusion length is also discussed in detail. 7 refs.
  • A technique for determining a minority carrier's diffusion length in photoactive III-V layers of solar cells by approximating their spectral characteristics is presented. Single-junction GaAs, Ge and multi-junction GaAs/Ge, GaInP/GaAs, and GaInP/GaInAs/Ge solar cells fabricated by hydride metal-organic vapor-phase epitaxy (H-MOVPE) have been studied. The dependences of the minority carrier diffusion length on the doping level of p-Ge and n-GaAs are determined. It is shown that the parameters of solid-state diffusion of phosphorus atoms to the p-Ge substrate from the n-GaInP nucleation layer are independent of the thickness of the latter within 35-300 nm. It is found that the diffusionmore » length of subcells of multijunction structures in Ga(In)As layers is smaller in comparison with that of single-junction structures.« less
  • Minority carrier diffusion lengths L d are calculated for GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires using a procedure based on imaging of recombination luminescence. The result of shell material on conveyance properties is recorded. An AlGaN shell produces L d values in surplus of 1μm and a relative insensitivity to wire diameter. An InGaN shell reduces effective diffusion length, while a dependence of L d on diameter is observed for unshielded nanowires.
  • Abstract not provided.