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Title: Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators

Abstract

We report on a comparative study of transfer doping of hydrogenated single crystal diamond surface by insulators featured by high electron affinity, such as Nb{sub 2}O{sub 5}, WO{sub 3}, V{sub 2}O{sub 5}, and MoO{sub 3}. The low electron affinity Al{sub 2}O{sub 3} was also investigated for comparison. Hole transport properties were evaluated in the passivated hydrogenated diamond films by Hall effect measurements, and were compared to un-passivated diamond films (air-induced doping). A drastic improvement was observed in passivated samples in terms of conductivity, stability with time, and resistance to high temperatures. The efficiency of the investigated insulators, as electron accepting materials in hydrogenated diamond surface, is consistent with their electronic structure. These surface acceptor materials generate a higher hole sheet concentration, up to 6.5 × 10{sup 13} cm{sup −2}, and a lower sheet resistance, down to 2.6 kΩ/sq, in comparison to the atmosphere-induced values of about 1 × 10{sup 13} cm{sup −2} and 10 kΩ/sq, respectively. On the other hand, hole mobilities were reduced by using high electron affinity insulator dopants. Hole mobility as a function of hole concentration in a hydrogenated diamond layer was also investigated, showing a well-defined monotonically decreasing trend.

Authors:
; ;  [1]; ; ;  [2]
  1. Dip. di Ingegneria Industriale, Università di Roma “Tor Vergata,” Via del Politecnico 1, I-00133 Roma (Italy)
  2. Dip. di Ingegneria Elettronica, Università di Roma “Tor Vergata,” Via del Politecnico 1, I-00133 Roma (Italy)
Publication Date:
OSTI Identifier:
22597868
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AFFINITY; ALUMINIUM OXIDES; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; DIAMONDS; DOPED MATERIALS; ELECTRONIC STRUCTURE; ELECTRONS; HALL EFFECT; HOLE MOBILITY; HYDROGEN; HYDROGENATION; MOLYBDENUM OXIDES; MONOCRYSTALS; NIOBIUM OXIDES; SURFACES; TUNGSTATES; TUNGSTEN OXIDES; VANADATES; VANADIUM OXIDES

Citation Formats

Verona, C., Marinelli, Marco, Verona-Rinati, G., Ciccognani, W., Colangeli, S., and Limiti, E. Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators. United States: N. p., 2016. Web. doi:10.1063/1.4955469.
Verona, C., Marinelli, Marco, Verona-Rinati, G., Ciccognani, W., Colangeli, S., & Limiti, E. Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators. United States. doi:10.1063/1.4955469.
Verona, C., Marinelli, Marco, Verona-Rinati, G., Ciccognani, W., Colangeli, S., and Limiti, E. Thu . "Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators". United States. doi:10.1063/1.4955469.
@article{osti_22597868,
title = {Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators},
author = {Verona, C. and Marinelli, Marco and Verona-Rinati, G. and Ciccognani, W. and Colangeli, S. and Limiti, E.},
abstractNote = {We report on a comparative study of transfer doping of hydrogenated single crystal diamond surface by insulators featured by high electron affinity, such as Nb{sub 2}O{sub 5}, WO{sub 3}, V{sub 2}O{sub 5}, and MoO{sub 3}. The low electron affinity Al{sub 2}O{sub 3} was also investigated for comparison. Hole transport properties were evaluated in the passivated hydrogenated diamond films by Hall effect measurements, and were compared to un-passivated diamond films (air-induced doping). A drastic improvement was observed in passivated samples in terms of conductivity, stability with time, and resistance to high temperatures. The efficiency of the investigated insulators, as electron accepting materials in hydrogenated diamond surface, is consistent with their electronic structure. These surface acceptor materials generate a higher hole sheet concentration, up to 6.5 × 10{sup 13} cm{sup −2}, and a lower sheet resistance, down to 2.6 kΩ/sq, in comparison to the atmosphere-induced values of about 1 × 10{sup 13} cm{sup −2} and 10 kΩ/sq, respectively. On the other hand, hole mobilities were reduced by using high electron affinity insulator dopants. Hole mobility as a function of hole concentration in a hydrogenated diamond layer was also investigated, showing a well-defined monotonically decreasing trend.},
doi = {10.1063/1.4955469},
journal = {Journal of Applied Physics},
number = 2,
volume = 120,
place = {United States},
year = {Thu Jul 14 00:00:00 EDT 2016},
month = {Thu Jul 14 00:00:00 EDT 2016}
}