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Title: Characterisation of Al{sub 0.52}In{sub 0.48}P mesa p-i-n photodiodes for X-ray photon counting spectroscopy

Abstract

Results characterising the performance of thin (2 μm i-layer) Al{sub 0.52}In{sub 0.48}P p{sup +}-i-n{sup +} mesa photodiodes for X-ray photon counting spectroscopy are reported at room temperature. Two 200 μm diameter and two 400 μm diameter Al{sub 0.52}In{sub 0.48}P p{sup +}-i-n{sup +} mesa photodiodes were studied. Dark current results as a function of applied reverse bias are shown; dark current densities <3 nA/cm{sup 2} were observed at 30 V (150 kV/cm) for all the devices analysed. Capacitance measurements as a function of applied reverse bias are also reported. X-ray spectra were collected using 10 μs shaping time, with the device illuminated by an {sup 55}Fe radioisotope X-ray source. Experimental results showed that the best energy resolution (FWHM) achieved at 5.9 keV was 930 eV for the 200 μm Al{sub 0.52}In{sub 0.48}P diameter devices, when reverse biased at 15 V. System noise analysis was also carried out, and the different noise contributions were computed.

Authors:
; ;  [1];  [2]
  1. Semiconductor Materials and Device Laboratory, School of Engineering and Informatics, University of Sussex, Brighton BN1 9QT (United Kingdom)
  2. EPSRC National Centre for III-V Technologies, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)
Publication Date:
OSTI Identifier:
22597863
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM PHOSPHIDES; CAPACITANCE; CURRENT DENSITY; INDIUM PHOSPHIDES; IRON 55; KEV RANGE 01-10; LAYERS; PERFORMANCE; PHOTODIODES; PHOTONS; P-N JUNCTIONS; TEMPERATURE RANGE 0273-0400 K; X RADIATION; X-RAY SOURCES; X-RAY SPECTRA; X-RAY SPECTROSCOPY; DARK CURRENT; PHOTON COUNTING

Citation Formats

Butera, S., E-mail: S.Butera@sussex.ac.uk, Lioliou, G., Barnett, A. M., and Krysa, A. B. Characterisation of Al{sub 0.52}In{sub 0.48}P mesa p-i-n photodiodes for X-ray photon counting spectroscopy. United States: N. p., 2016. Web. doi:10.1063/1.4956153.
Butera, S., E-mail: S.Butera@sussex.ac.uk, Lioliou, G., Barnett, A. M., & Krysa, A. B. Characterisation of Al{sub 0.52}In{sub 0.48}P mesa p-i-n photodiodes for X-ray photon counting spectroscopy. United States. doi:10.1063/1.4956153.
Butera, S., E-mail: S.Butera@sussex.ac.uk, Lioliou, G., Barnett, A. M., and Krysa, A. B. 2016. "Characterisation of Al{sub 0.52}In{sub 0.48}P mesa p-i-n photodiodes for X-ray photon counting spectroscopy". United States. doi:10.1063/1.4956153.
@article{osti_22597863,
title = {Characterisation of Al{sub 0.52}In{sub 0.48}P mesa p-i-n photodiodes for X-ray photon counting spectroscopy},
author = {Butera, S., E-mail: S.Butera@sussex.ac.uk and Lioliou, G. and Barnett, A. M. and Krysa, A. B.},
abstractNote = {Results characterising the performance of thin (2 μm i-layer) Al{sub 0.52}In{sub 0.48}P p{sup +}-i-n{sup +} mesa photodiodes for X-ray photon counting spectroscopy are reported at room temperature. Two 200 μm diameter and two 400 μm diameter Al{sub 0.52}In{sub 0.48}P p{sup +}-i-n{sup +} mesa photodiodes were studied. Dark current results as a function of applied reverse bias are shown; dark current densities <3 nA/cm{sup 2} were observed at 30 V (150 kV/cm) for all the devices analysed. Capacitance measurements as a function of applied reverse bias are also reported. X-ray spectra were collected using 10 μs shaping time, with the device illuminated by an {sup 55}Fe radioisotope X-ray source. Experimental results showed that the best energy resolution (FWHM) achieved at 5.9 keV was 930 eV for the 200 μm Al{sub 0.52}In{sub 0.48}P diameter devices, when reverse biased at 15 V. System noise analysis was also carried out, and the different noise contributions were computed.},
doi = {10.1063/1.4956153},
journal = {Journal of Applied Physics},
number = 2,
volume = 120,
place = {United States},
year = 2016,
month = 7
}
  • A dark count rate in InP-based single photon counting avalanche photodiodes is a limiting factor to their efficacy. The temperature dependence of the dark count rate was studied to understand its origin in In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As separate-absorption-charge-multiplication avalanche photodiodes. The dark count rate was observed to be a very weak function of temperature in the range from 77 K to 300 K. Various mechanisms for dark count generation were considered. Simulations of band-to-band tunneling in the In{sub 0.52}Al{sub 0.48}As multiplication layer were found to agree well with the experimental temperature dependence of dark count rate at various excessmore » biases. To reduce tunneling-induced dark counts, a suitable design change to the detector structure is proposed.« less
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