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Title: Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd{sub 2}O{sub 3}

Abstract

One of the approaches for realizing advanced high k insulators for metal oxide semiconductor field effect transistors based devices is the use of rare earth oxides. When these oxides are deposited as epitaxial thin films, they demonstrate dielectric properties that differ greatly from those that are known for bulk oxides. Using structural and spectroscopic techniques, as well as first-principles calculations, Gd{sub 2}O{sub 3} films deposited on Si (111) and Ge (111) were characterized. It was seen that the same 4 nm thick film, grown simultaneously on Ge and Si, presents an unstrained lattice on Ge while showing a metastable phase on Si. This change from the cubic lattice to the distorted metastable phase is characterized by an increase in the dielectric constant of more than 30% and a change in band gap. The case in study shows that extreme structural changes can occur in ultra-thin epitaxial rare earth oxide films and modify their dielectric properties when the underlying substrate is altered.

Authors:
; ;  [1]; ; ;  [2]
  1. Department of Materials Science and Engineering, Technion–Israel Institute of Technology, Haifa 32000 (Israel)
  2. Institute of Electronic Materials and Devices, Leibniz University of Hannover, Schneiderberg 32, 30167 Hannover (Germany)
Publication Date:
OSTI Identifier:
22597848
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CUBIC LATTICES; DEPOSITS; DIELECTRIC MATERIALS; EPITAXY; FIELD EFFECT TRANSISTORS; GADOLINIUM OXIDES; GERMANIUM; PERMITTIVITY; RARE EARTHS; SEMICONDUCTOR MATERIALS; SILICON; STRAINS; SUBSTRATES; THIN FILMS

Citation Formats

Shekhter, P., E-mail: Pini@tx.technion.ac.il, Amouyal, Y., Eizenberg, M., Schwendt, D., Wietler, T. F., and Osten, H. J.. Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd{sub 2}O{sub 3}. United States: N. p., 2016. Web. doi:10.1063/1.4958301.
Shekhter, P., E-mail: Pini@tx.technion.ac.il, Amouyal, Y., Eizenberg, M., Schwendt, D., Wietler, T. F., & Osten, H. J.. Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd{sub 2}O{sub 3}. United States. doi:10.1063/1.4958301.
Shekhter, P., E-mail: Pini@tx.technion.ac.il, Amouyal, Y., Eizenberg, M., Schwendt, D., Wietler, T. F., and Osten, H. J.. Thu . "Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd{sub 2}O{sub 3}". United States. doi:10.1063/1.4958301.
@article{osti_22597848,
title = {Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd{sub 2}O{sub 3}},
author = {Shekhter, P., E-mail: Pini@tx.technion.ac.il and Amouyal, Y. and Eizenberg, M. and Schwendt, D. and Wietler, T. F. and Osten, H. J.},
abstractNote = {One of the approaches for realizing advanced high k insulators for metal oxide semiconductor field effect transistors based devices is the use of rare earth oxides. When these oxides are deposited as epitaxial thin films, they demonstrate dielectric properties that differ greatly from those that are known for bulk oxides. Using structural and spectroscopic techniques, as well as first-principles calculations, Gd{sub 2}O{sub 3} films deposited on Si (111) and Ge (111) were characterized. It was seen that the same 4 nm thick film, grown simultaneously on Ge and Si, presents an unstrained lattice on Ge while showing a metastable phase on Si. This change from the cubic lattice to the distorted metastable phase is characterized by an increase in the dielectric constant of more than 30% and a change in band gap. The case in study shows that extreme structural changes can occur in ultra-thin epitaxial rare earth oxide films and modify their dielectric properties when the underlying substrate is altered.},
doi = {10.1063/1.4958301},
journal = {Journal of Applied Physics},
number = 1,
volume = 120,
place = {United States},
year = {Thu Jul 07 00:00:00 EDT 2016},
month = {Thu Jul 07 00:00:00 EDT 2016}
}