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Title: Potential application of mono/bi-layer molybdenum disulfide (MoS{sub 2}) sheet as an efficient transparent conducting electrode in silicon heterojunction solar cells

Abstract

In this paper, we have simulated the structure of n-type MoS{sub 2}/silicon heterojunction solar cell and studied its function under different conditions. The optimization of parameters of the cell's layer has been carried out by using AFORS-HET software. In the present study, MoS{sub 2} has been considered as 3-D in nature instead of the reported 2-D nature. In order to ensure the formation of Schottky junction, electric contact has been made along the c-axis to collect the minority charge carriers. After optimizing the various parameters of n-type single layer MoS{sub 2}, power efficiency of 12.44% has been achieved at the room temperature, which has further decreased to 9.042% as the layer number has increased up to 40. Furthermore, after optimizing the parameters of silicon wafer maximum efficiency of 16.4% has been achieved. Temperature dependence of the cell performance has also been studied and the maximum efficiency has been achieved at 300 K. In the present study, we have demonstrated that n-type ultrathin layer of MoS{sub 2} can be used as an excellent transparent conducting electrode.

Authors:
;  [1];  [1];  [2];  [1];  [2];  [3]
  1. Department of Applied Physics, Delhi Technological University, Delhi–110042 (India)
  2. (India)
  3. Department of Physics, Rajiv Gandhi University, Itanagar, Arunachal Pradesh–791112 (India)
Publication Date:
OSTI Identifier:
22597846
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; A CODES; CHARGE CARRIERS; EFFICIENCY; ELECTRIC CONTACTS; ELECTRODES; HETEROJUNCTIONS; LAYERS; MOLYBDENUM; MOLYBDENUM SULFIDES; N-TYPE CONDUCTORS; OPTIMIZATION; SCHOTTKY BARRIER SOLAR CELLS; SCHOTTKY EFFECT; SILICON; SILICON OXIDES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THREE-DIMENSIONAL CALCULATIONS; TWO-DIMENSIONAL CALCULATIONS

Citation Formats

Chaudhary, Rimjhim, Tyagi, Pawan K., E-mail: pawan.phy@dce.edu, E-mail: pawankumartyagi@gmail.com, Patel, Kamlesh, Department of Electronic Science, University of Delhi South Campus, Delhi–110021, Sinha, Ravindra K., Central Scientific Instruments Organisation, Chandigarh–160030, and Kumar, Sanjeev. Potential application of mono/bi-layer molybdenum disulfide (MoS{sub 2}) sheet as an efficient transparent conducting electrode in silicon heterojunction solar cells. United States: N. p., 2016. Web. doi:10.1063/1.4955071.
Chaudhary, Rimjhim, Tyagi, Pawan K., E-mail: pawan.phy@dce.edu, E-mail: pawankumartyagi@gmail.com, Patel, Kamlesh, Department of Electronic Science, University of Delhi South Campus, Delhi–110021, Sinha, Ravindra K., Central Scientific Instruments Organisation, Chandigarh–160030, & Kumar, Sanjeev. Potential application of mono/bi-layer molybdenum disulfide (MoS{sub 2}) sheet as an efficient transparent conducting electrode in silicon heterojunction solar cells. United States. doi:10.1063/1.4955071.
Chaudhary, Rimjhim, Tyagi, Pawan K., E-mail: pawan.phy@dce.edu, E-mail: pawankumartyagi@gmail.com, Patel, Kamlesh, Department of Electronic Science, University of Delhi South Campus, Delhi–110021, Sinha, Ravindra K., Central Scientific Instruments Organisation, Chandigarh–160030, and Kumar, Sanjeev. 2016. "Potential application of mono/bi-layer molybdenum disulfide (MoS{sub 2}) sheet as an efficient transparent conducting electrode in silicon heterojunction solar cells". United States. doi:10.1063/1.4955071.
@article{osti_22597846,
title = {Potential application of mono/bi-layer molybdenum disulfide (MoS{sub 2}) sheet as an efficient transparent conducting electrode in silicon heterojunction solar cells},
author = {Chaudhary, Rimjhim and Tyagi, Pawan K., E-mail: pawan.phy@dce.edu, E-mail: pawankumartyagi@gmail.com and Patel, Kamlesh and Department of Electronic Science, University of Delhi South Campus, Delhi–110021 and Sinha, Ravindra K. and Central Scientific Instruments Organisation, Chandigarh–160030 and Kumar, Sanjeev},
abstractNote = {In this paper, we have simulated the structure of n-type MoS{sub 2}/silicon heterojunction solar cell and studied its function under different conditions. The optimization of parameters of the cell's layer has been carried out by using AFORS-HET software. In the present study, MoS{sub 2} has been considered as 3-D in nature instead of the reported 2-D nature. In order to ensure the formation of Schottky junction, electric contact has been made along the c-axis to collect the minority charge carriers. After optimizing the various parameters of n-type single layer MoS{sub 2}, power efficiency of 12.44% has been achieved at the room temperature, which has further decreased to 9.042% as the layer number has increased up to 40. Furthermore, after optimizing the parameters of silicon wafer maximum efficiency of 16.4% has been achieved. Temperature dependence of the cell performance has also been studied and the maximum efficiency has been achieved at 300 K. In the present study, we have demonstrated that n-type ultrathin layer of MoS{sub 2} can be used as an excellent transparent conducting electrode.},
doi = {10.1063/1.4955071},
journal = {Journal of Applied Physics},
number = 1,
volume = 120,
place = {United States},
year = 2016,
month = 7
}
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