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Title: Wafer scale fabrication of carbon nanotube thin film transistors with high yield

Abstract

Carbon nanotube thin film transistors (CNT-TFTs) are promising candidates for future high performance and low cost macro-electronics. However, most of the reported CNT-TFTs are fabricated in small quantities on a relatively small size substrate. The yield of large scale fabrication and the performance uniformity of devices on large size substrates should be improved before the CNT-TFTs reach real products. In this paper, 25 200 devices, with various geometries (channel width and channel length), were fabricated on 4-in. size ridged and flexible substrates. Almost 100% device yield were obtained on a rigid substrate with high out-put current (>8 μA/μm), high on/off current ratio (>10{sup 5}), and high mobility (>30 cm{sup 2}/V·s). More importantly, uniform performance in 4-in. area was achieved, and the fabrication process can be scaled up. The results give us more confidence for the real application of the CNT-TFT technology in the near future.

Authors:
; ; ; ; ; ;  [1];  [1];  [2]
  1. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22597823
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARBON NANOTUBES; FABRICATION; GEOMETRY; LENGTH; MOBILITY; PERFORMANCE; SUBSTRATES; THIN FILMS; TRANSISTORS; WIDTH; YIELDS

Citation Formats

Tian, Boyuan, Liang, Xuelei, E-mail: liangxl@pku.edu.cn, E-mail: ssxie@iphy.ac.cn, Yan, Qiuping, Zhang, Han, Xia, Jiye, Dong, Guodong, Peng, Lianmao, Xie, Sishen, E-mail: liangxl@pku.edu.cn, E-mail: ssxie@iphy.ac.cn, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190. Wafer scale fabrication of carbon nanotube thin film transistors with high yield. United States: N. p., 2016. Web. doi:10.1063/1.4958850.
Tian, Boyuan, Liang, Xuelei, E-mail: liangxl@pku.edu.cn, E-mail: ssxie@iphy.ac.cn, Yan, Qiuping, Zhang, Han, Xia, Jiye, Dong, Guodong, Peng, Lianmao, Xie, Sishen, E-mail: liangxl@pku.edu.cn, E-mail: ssxie@iphy.ac.cn, & Institute of Physics, Chinese Academy of Sciences, Beijing 100190. Wafer scale fabrication of carbon nanotube thin film transistors with high yield. United States. doi:10.1063/1.4958850.
Tian, Boyuan, Liang, Xuelei, E-mail: liangxl@pku.edu.cn, E-mail: ssxie@iphy.ac.cn, Yan, Qiuping, Zhang, Han, Xia, Jiye, Dong, Guodong, Peng, Lianmao, Xie, Sishen, E-mail: liangxl@pku.edu.cn, E-mail: ssxie@iphy.ac.cn, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190. Thu . "Wafer scale fabrication of carbon nanotube thin film transistors with high yield". United States. doi:10.1063/1.4958850.
@article{osti_22597823,
title = {Wafer scale fabrication of carbon nanotube thin film transistors with high yield},
author = {Tian, Boyuan and Liang, Xuelei, E-mail: liangxl@pku.edu.cn, E-mail: ssxie@iphy.ac.cn and Yan, Qiuping and Zhang, Han and Xia, Jiye and Dong, Guodong and Peng, Lianmao and Xie, Sishen, E-mail: liangxl@pku.edu.cn, E-mail: ssxie@iphy.ac.cn and Institute of Physics, Chinese Academy of Sciences, Beijing 100190},
abstractNote = {Carbon nanotube thin film transistors (CNT-TFTs) are promising candidates for future high performance and low cost macro-electronics. However, most of the reported CNT-TFTs are fabricated in small quantities on a relatively small size substrate. The yield of large scale fabrication and the performance uniformity of devices on large size substrates should be improved before the CNT-TFTs reach real products. In this paper, 25 200 devices, with various geometries (channel width and channel length), were fabricated on 4-in. size ridged and flexible substrates. Almost 100% device yield were obtained on a rigid substrate with high out-put current (>8 μA/μm), high on/off current ratio (>10{sup 5}), and high mobility (>30 cm{sup 2}/V·s). More importantly, uniform performance in 4-in. area was achieved, and the fabrication process can be scaled up. The results give us more confidence for the real application of the CNT-TFT technology in the near future.},
doi = {10.1063/1.4958850},
journal = {Journal of Applied Physics},
number = 3,
volume = 120,
place = {United States},
year = {Thu Jul 21 00:00:00 EDT 2016},
month = {Thu Jul 21 00:00:00 EDT 2016}
}