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Title: Erratum: “Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors” [J. Appl. Phys. 119, 193102 (2016)]

Abstract

No abstract prepared.

Authors:
; ;  [1]
  1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43212 (United States)
Publication Date:
OSTI Identifier:
22597793
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 4; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRON MOBILITY; ELECTRONS; LAYERS; PLASMA; TRANSISTORS

Citation Formats

Bhardwaj, Shubhendu, Rajan, Siddharth, and Volakis, John L. Erratum: “Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors” [J. Appl. Phys. 119, 193102 (2016)]. United States: N. p., 2016. Web. doi:10.1063/1.4960091.
Bhardwaj, Shubhendu, Rajan, Siddharth, & Volakis, John L. Erratum: “Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors” [J. Appl. Phys. 119, 193102 (2016)]. United States. doi:10.1063/1.4960091.
Bhardwaj, Shubhendu, Rajan, Siddharth, and Volakis, John L. 2016. "Erratum: “Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors” [J. Appl. Phys. 119, 193102 (2016)]". United States. doi:10.1063/1.4960091.
@article{osti_22597793,
title = {Erratum: “Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors” [J. Appl. Phys. 119, 193102 (2016)]},
author = {Bhardwaj, Shubhendu and Rajan, Siddharth and Volakis, John L.},
abstractNote = {No abstract prepared.},
doi = {10.1063/1.4960091},
journal = {Journal of Applied Physics},
number = 4,
volume = 120,
place = {United States},
year = 2016,
month = 7
}