Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth

Journal Article · Thu Jul 28 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4955333· OSTI ID:22597786

Englhard, M.; Klemp, C.; Behringer, M.; Rudolph, A. ^[1]; Skibitzki, O.; Zaumseil, P. ^[2]; Schroeder, T. ^[2]

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1. OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany)
2. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)

This study reports a method to reuse GaAs substrates with a batch process for thin film light emitting diode (TF-LED) production. The method is based on an epitaxial lift-off technique. With the developed reclaim process, it is possible to get an epi-ready GaAs surface without additional time-consuming and expensive grinding/polishing processes. The reclaim and regrowth process was investigated with a one layer epitaxial test structure. The GaAs surface was characterized by an atomic force microscope directly after the reclaim process. The crystal structure of the regrown In{sub 0.5}(Ga{sub 0.45}Al{sub 0.55}){sub 0.5}P (Q{sub 55}) layer was investigated by high resolution x-ray diffraction and scanning transmission electron microscopy. In addition, a complete TF-LED grown on reclaimed GaAs substrates was electro-optically characterized on wafer level. The crystal structure of the epitaxial layers and the performance of the TF-LED grown on reclaimed substrates are not influenced by the developed reclaim process. This process would result in reducing costs for LEDs and reducing much arsenic waste for the benefit of a green semiconductor production.

• OSTI ID: 22597786
• Journal Information: Journal of Applied Physics, Vol. 120, Issue 4; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ARSENIC
ATOMIC FORCE MICROSCOPY
CRYSTAL STRUCTURE
CRYSTALS
EPITAXY
GALLIUM ARSENIDES
GRINDING
LAYERS
LIGHT EMITTING DIODES
POLISHING
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X RADIATION
X-RAY DIFFRACTION