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Title: Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth

Abstract

This study reports a method to reuse GaAs substrates with a batch process for thin film light emitting diode (TF-LED) production. The method is based on an epitaxial lift-off technique. With the developed reclaim process, it is possible to get an epi-ready GaAs surface without additional time-consuming and expensive grinding/polishing processes. The reclaim and regrowth process was investigated with a one layer epitaxial test structure. The GaAs surface was characterized by an atomic force microscope directly after the reclaim process. The crystal structure of the regrown In{sub 0.5}(Ga{sub 0.45}Al{sub 0.55}){sub 0.5}P (Q{sub 55}) layer was investigated by high resolution x-ray diffraction and scanning transmission electron microscopy. In addition, a complete TF-LED grown on reclaimed GaAs substrates was electro-optically characterized on wafer level. The crystal structure of the epitaxial layers and the performance of the TF-LED grown on reclaimed substrates are not influenced by the developed reclaim process. This process would result in reducing costs for LEDs and reducing much arsenic waste for the benefit of a green semiconductor production.

Authors:
; ; ;  [1]; ;  [2];  [2];  [3]
  1. OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany)
  2. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)
  3. (Germany)
Publication Date:
OSTI Identifier:
22597786
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 4; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ARSENIC; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; CRYSTALS; EPITAXY; GALLIUM ARSENIDES; GRINDING; LAYERS; LIGHT EMITTING DIODES; POLISHING; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RADIATION; X-RAY DIFFRACTION

Citation Formats

Englhard, M., Klemp, C., Behringer, M., Rudolph, A., Skibitzki, O., Zaumseil, P., Schroeder, T., and Institute of Physics and Chemistry, BTU Cottbus-Senftenberg, Konrad-Zuse-Str. 1, 03046 Cottbus. Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth. United States: N. p., 2016. Web. doi:10.1063/1.4955333.
Englhard, M., Klemp, C., Behringer, M., Rudolph, A., Skibitzki, O., Zaumseil, P., Schroeder, T., & Institute of Physics and Chemistry, BTU Cottbus-Senftenberg, Konrad-Zuse-Str. 1, 03046 Cottbus. Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth. United States. doi:10.1063/1.4955333.
Englhard, M., Klemp, C., Behringer, M., Rudolph, A., Skibitzki, O., Zaumseil, P., Schroeder, T., and Institute of Physics and Chemistry, BTU Cottbus-Senftenberg, Konrad-Zuse-Str. 1, 03046 Cottbus. 2016. "Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth". United States. doi:10.1063/1.4955333.
@article{osti_22597786,
title = {Characterization of reclaimed GaAs substrates and investigation of reuse for thin film InGaAlP LED epitaxial growth},
author = {Englhard, M. and Klemp, C. and Behringer, M. and Rudolph, A. and Skibitzki, O. and Zaumseil, P. and Schroeder, T. and Institute of Physics and Chemistry, BTU Cottbus-Senftenberg, Konrad-Zuse-Str. 1, 03046 Cottbus},
abstractNote = {This study reports a method to reuse GaAs substrates with a batch process for thin film light emitting diode (TF-LED) production. The method is based on an epitaxial lift-off technique. With the developed reclaim process, it is possible to get an epi-ready GaAs surface without additional time-consuming and expensive grinding/polishing processes. The reclaim and regrowth process was investigated with a one layer epitaxial test structure. The GaAs surface was characterized by an atomic force microscope directly after the reclaim process. The crystal structure of the regrown In{sub 0.5}(Ga{sub 0.45}Al{sub 0.55}){sub 0.5}P (Q{sub 55}) layer was investigated by high resolution x-ray diffraction and scanning transmission electron microscopy. In addition, a complete TF-LED grown on reclaimed GaAs substrates was electro-optically characterized on wafer level. The crystal structure of the epitaxial layers and the performance of the TF-LED grown on reclaimed substrates are not influenced by the developed reclaim process. This process would result in reducing costs for LEDs and reducing much arsenic waste for the benefit of a green semiconductor production.},
doi = {10.1063/1.4955333},
journal = {Journal of Applied Physics},
number = 4,
volume = 120,
place = {United States},
year = 2016,
month = 7
}
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