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Title: Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection

Abstract

We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the other contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for collective response of the lateral CNT networks which comprise a mixture of randomly oriented semiconductor CNTs (s-CNTs) and quasi-metal CNTs (m-CNTs). The proposed model includes the concept of the collective two-dimensional (2D) plasmons in relatively dense networks of randomly oriented CNTs (CNT “felt”) and predicts the detector responsivity spectral characteristics exhibiting sharp resonant peaks at the signal frequencies corresponding to the 2D plasmonic resonances. The detection mechanism is the rectification of the ac current due the nonlinearity of the Schottky contact current-voltage characteristics under the conditions of a strong enhancement of the potential drop at this contact associated with the plasmon excitation. The detector responsivity depends on the fractions of the s- and m-CNTs. The burning of the near-contact regions of the m-CNTs or destruction of these CNTs leads to a marked increase in the responsivity in agreement with our experimental data. Themore » resonant THz detectors with sufficiently dense lateral CNT networks can compete and surpass other THz detectors using plasmonic effects at room temperatures.« less

Authors:
 [1];  [2];  [2];  [1];  [3];  [4];  [4];  [2]; ;  [5];  [5];  [2]; ; ;  [6];  [7];  [8]
  1. Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan)
  2. (Russian Federation)
  3. Department of Computer Science and Engineering, University of Aizu, Aizu-Wakamatsu 965-8580 (Japan)
  4. Department of General Physics, Moscow Institute of Physics and Technology, Dolgoprudny, 147100 (Russian Federation)
  5. Physics Department, Moscow State Pedagogical University, Moscow 119991 (Russian Federation)
  6. Laboratoire Charles Coulomb UMR 5221, Universite Montpellier 2 and CNRS, F-34095, Montpellier (France)
  7. Department of Electrical Engineering, University at Buffalo, Buffalo, New York 1460-1920 (United States)
  8. Departments of Electrical, Computer, and Systems Engineering and Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
Publication Date:
OSTI Identifier:
22597783
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 4; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ASYMMETRY; CARBON NANOTUBES; ELECTRIC POTENTIAL; ELECTRODES; EXCITATION; MIXTURES; NONLINEAR PROBLEMS; PLASMONS; RADIATION DETECTION; SEMICONDUCTOR MATERIALS; SIGNALS; TEMPERATURE RANGE 0273-0400 K; TWO-DIMENSIONAL CALCULATIONS

Citation Formats

Ryzhii, V., Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow 117105, Center for Photonics and Infrared Engineering, Bauman Moscow State Technical University, Moscow 111005, Otsuji, T., Ryzhii, M., Leiman, V. G., Fedorov, G., Physics Department, Moscow State Pedagogical University, Moscow 119991, Goltzman, G. N., Titova, N., Gayduchenko, I. A., National Research Center “Kurchatov Institute,” Moscow 123182, Coquillat, D., But, D., Knap, W., Mitin, V., and Shur, M. S.. Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection. United States: N. p., 2016. Web. doi:10.1063/1.4959215.
Ryzhii, V., Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow 117105, Center for Photonics and Infrared Engineering, Bauman Moscow State Technical University, Moscow 111005, Otsuji, T., Ryzhii, M., Leiman, V. G., Fedorov, G., Physics Department, Moscow State Pedagogical University, Moscow 119991, Goltzman, G. N., Titova, N., Gayduchenko, I. A., National Research Center “Kurchatov Institute,” Moscow 123182, Coquillat, D., But, D., Knap, W., Mitin, V., & Shur, M. S.. Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection. United States. doi:10.1063/1.4959215.
Ryzhii, V., Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow 117105, Center for Photonics and Infrared Engineering, Bauman Moscow State Technical University, Moscow 111005, Otsuji, T., Ryzhii, M., Leiman, V. G., Fedorov, G., Physics Department, Moscow State Pedagogical University, Moscow 119991, Goltzman, G. N., Titova, N., Gayduchenko, I. A., National Research Center “Kurchatov Institute,” Moscow 123182, Coquillat, D., But, D., Knap, W., Mitin, V., and Shur, M. S.. 2016. "Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection". United States. doi:10.1063/1.4959215.
@article{osti_22597783,
title = {Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection},
author = {Ryzhii, V. and Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow 117105 and Center for Photonics and Infrared Engineering, Bauman Moscow State Technical University, Moscow 111005 and Otsuji, T. and Ryzhii, M. and Leiman, V. G. and Fedorov, G. and Physics Department, Moscow State Pedagogical University, Moscow 119991 and Goltzman, G. N. and Titova, N. and Gayduchenko, I. A. and National Research Center “Kurchatov Institute,” Moscow 123182 and Coquillat, D. and But, D. and Knap, W. and Mitin, V. and Shur, M. S.},
abstractNote = {We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the other contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for collective response of the lateral CNT networks which comprise a mixture of randomly oriented semiconductor CNTs (s-CNTs) and quasi-metal CNTs (m-CNTs). The proposed model includes the concept of the collective two-dimensional (2D) plasmons in relatively dense networks of randomly oriented CNTs (CNT “felt”) and predicts the detector responsivity spectral characteristics exhibiting sharp resonant peaks at the signal frequencies corresponding to the 2D plasmonic resonances. The detection mechanism is the rectification of the ac current due the nonlinearity of the Schottky contact current-voltage characteristics under the conditions of a strong enhancement of the potential drop at this contact associated with the plasmon excitation. The detector responsivity depends on the fractions of the s- and m-CNTs. The burning of the near-contact regions of the m-CNTs or destruction of these CNTs leads to a marked increase in the responsivity in agreement with our experimental data. The resonant THz detectors with sufficiently dense lateral CNT networks can compete and surpass other THz detectors using plasmonic effects at room temperatures.},
doi = {10.1063/1.4959215},
journal = {Journal of Applied Physics},
number = 4,
volume = 120,
place = {United States},
year = 2016,
month = 7
}
  • Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DCmore » voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors.« less
  • Resonance detection of terahertz radiation by submicrometer field-effect GaAs/AlGaAs transistors (with the gate length L = 250 nm) with two-dimensional electron gas in the channel has been studied at T = 4.2 K. For these transistors, it is shown for the first time that the maximum of the response (the drain-source photovoltage) shifts with an increasing frequency to the region of higher gate voltages in accordance with the Dyakonov-Shur theory. It is shown that, as temperature is increased to 77 K, the dependence of the photovoltage on the gate voltage becomes nonresonant, which is caused by a decrease in themore » mobility.« less
  • Single walled carbon nanotube networks (SWCNTNs) were coated by tetrahedral amorphous carbon (ta-C) to improve the mechanical wear properties of the composite film. The ta-C deposition was performed by using pulsed filtered cathodic vacuum arc method resulting in the generation of C+ ions in the energy range of 40–60 eV which coalesce to form a ta-C film. The primary disadvantage of this process is a significant increase in the electrical resistance of the SWCNTN post coating. The increase in the SWCNTN resistance is attributed primarily to the intrinsic stress of the ta-C coating which affects the inter-bundle junction resistance between themore » SWCNTN bundles. E-beam evaporated carbon was deposited on the SWCNTNs prior to the ta-C deposition in order to protect the SWCNTN from the intrinsic stress of the ta-C film. The causes of changes in electrical resistance and the effect of evaporated carbon thickness on the changes in electrical resistance and mechanical wear properties have been studied.« less
  • We report on experiments on photoresponse to sub-THz (120 GHz) radiation of Si field-effect transistors (FETs) with nanometer and submicron gate lengths at 300 K. The observed photoresponse is in agreement with predictions of the Dyakonov-Shur plasma wave detection theory. This is experimental evidence of the plasma wave detection by silicon FETs. The plasma wave parameters deduced from the experiments allow us to predict the nonresonant and resonant detection in THz range by nanometer size silicon devices operating at room temperature.
  • PMLSM is used for propulsion device of high speed ground transportation or contactless carrier in factory automation and office automation. This paper represents lateral characteristics of Permanent Magnet Linear Synchronous Motor (PMLSM) according to change of overhang length. In order to analyze overhang effect of PMLSM with large airgap and finite width considering lateral displacement, new 3 dimensional equivalent magnetic circuit network method (3-D EMCN) taking into account movement of the secondary in lateral direction is introduced, which supplements magnetic equivalent circuit by using numerical technique. 3-D EMCN can consider secondary movement without remesh the element because it uses themore » initial mesh continuously. The authors analyzed characteristics for overhang three type case which must be problems in 3-D. The results are compared with experimental data and shown a reasonable agreement.« less