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Title: Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection

Abstract

We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the other contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for collective response of the lateral CNT networks which comprise a mixture of randomly oriented semiconductor CNTs (s-CNTs) and quasi-metal CNTs (m-CNTs). The proposed model includes the concept of the collective two-dimensional (2D) plasmons in relatively dense networks of randomly oriented CNTs (CNT “felt”) and predicts the detector responsivity spectral characteristics exhibiting sharp resonant peaks at the signal frequencies corresponding to the 2D plasmonic resonances. The detection mechanism is the rectification of the ac current due the nonlinearity of the Schottky contact current-voltage characteristics under the conditions of a strong enhancement of the potential drop at this contact associated with the plasmon excitation. The detector responsivity depends on the fractions of the s- and m-CNTs. The burning of the near-contact regions of the m-CNTs or destruction of these CNTs leads to a marked increase in the responsivity in agreement with our experimental data. Themore » resonant THz detectors with sufficiently dense lateral CNT networks can compete and surpass other THz detectors using plasmonic effects at room temperatures.« less

Authors:
 [1];  [2];  [2];  [1];  [3];  [4];  [4];  [2]; ;  [5];  [5];  [2]; ; ;  [6];  [7];  [8]
  1. Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan)
  2. (Russian Federation)
  3. Department of Computer Science and Engineering, University of Aizu, Aizu-Wakamatsu 965-8580 (Japan)
  4. Department of General Physics, Moscow Institute of Physics and Technology, Dolgoprudny, 147100 (Russian Federation)
  5. Physics Department, Moscow State Pedagogical University, Moscow 119991 (Russian Federation)
  6. Laboratoire Charles Coulomb UMR 5221, Universite Montpellier 2 and CNRS, F-34095, Montpellier (France)
  7. Department of Electrical Engineering, University at Buffalo, Buffalo, New York 1460-1920 (United States)
  8. Departments of Electrical, Computer, and Systems Engineering and Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
Publication Date:
OSTI Identifier:
22597783
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 4; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ASYMMETRY; CARBON NANOTUBES; ELECTRIC POTENTIAL; ELECTRODES; EXCITATION; MIXTURES; NONLINEAR PROBLEMS; PLASMONS; RADIATION DETECTION; SEMICONDUCTOR MATERIALS; SIGNALS; TEMPERATURE RANGE 0273-0400 K; TWO-DIMENSIONAL CALCULATIONS

Citation Formats

Ryzhii, V., Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow 117105, Center for Photonics and Infrared Engineering, Bauman Moscow State Technical University, Moscow 111005, Otsuji, T., Ryzhii, M., Leiman, V. G., Fedorov, G., Physics Department, Moscow State Pedagogical University, Moscow 119991, Goltzman, G. N., Titova, N., Gayduchenko, I. A., National Research Center “Kurchatov Institute,” Moscow 123182, Coquillat, D., But, D., Knap, W., Mitin, V., and Shur, M. S.. Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection. United States: N. p., 2016. Web. doi:10.1063/1.4959215.
Ryzhii, V., Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow 117105, Center for Photonics and Infrared Engineering, Bauman Moscow State Technical University, Moscow 111005, Otsuji, T., Ryzhii, M., Leiman, V. G., Fedorov, G., Physics Department, Moscow State Pedagogical University, Moscow 119991, Goltzman, G. N., Titova, N., Gayduchenko, I. A., National Research Center “Kurchatov Institute,” Moscow 123182, Coquillat, D., But, D., Knap, W., Mitin, V., & Shur, M. S.. Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection. United States. doi:10.1063/1.4959215.
Ryzhii, V., Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow 117105, Center for Photonics and Infrared Engineering, Bauman Moscow State Technical University, Moscow 111005, Otsuji, T., Ryzhii, M., Leiman, V. G., Fedorov, G., Physics Department, Moscow State Pedagogical University, Moscow 119991, Goltzman, G. N., Titova, N., Gayduchenko, I. A., National Research Center “Kurchatov Institute,” Moscow 123182, Coquillat, D., But, D., Knap, W., Mitin, V., and Shur, M. S.. Thu . "Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection". United States. doi:10.1063/1.4959215.
@article{osti_22597783,
title = {Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection},
author = {Ryzhii, V. and Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow 117105 and Center for Photonics and Infrared Engineering, Bauman Moscow State Technical University, Moscow 111005 and Otsuji, T. and Ryzhii, M. and Leiman, V. G. and Fedorov, G. and Physics Department, Moscow State Pedagogical University, Moscow 119991 and Goltzman, G. N. and Titova, N. and Gayduchenko, I. A. and National Research Center “Kurchatov Institute,” Moscow 123182 and Coquillat, D. and But, D. and Knap, W. and Mitin, V. and Shur, M. S.},
abstractNote = {We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the other contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for collective response of the lateral CNT networks which comprise a mixture of randomly oriented semiconductor CNTs (s-CNTs) and quasi-metal CNTs (m-CNTs). The proposed model includes the concept of the collective two-dimensional (2D) plasmons in relatively dense networks of randomly oriented CNTs (CNT “felt”) and predicts the detector responsivity spectral characteristics exhibiting sharp resonant peaks at the signal frequencies corresponding to the 2D plasmonic resonances. The detection mechanism is the rectification of the ac current due the nonlinearity of the Schottky contact current-voltage characteristics under the conditions of a strong enhancement of the potential drop at this contact associated with the plasmon excitation. The detector responsivity depends on the fractions of the s- and m-CNTs. The burning of the near-contact regions of the m-CNTs or destruction of these CNTs leads to a marked increase in the responsivity in agreement with our experimental data. The resonant THz detectors with sufficiently dense lateral CNT networks can compete and surpass other THz detectors using plasmonic effects at room temperatures.},
doi = {10.1063/1.4959215},
journal = {Journal of Applied Physics},
number = 4,
volume = 120,
place = {United States},
year = {Thu Jul 28 00:00:00 EDT 2016},
month = {Thu Jul 28 00:00:00 EDT 2016}
}