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Title: Epitaxial growth and electronic properties of mixed valence YbAl{sub 3} thin films

Abstract

We report the growth of thin films of the mixed valence compound YbAl{sub 3} on MgO using molecular-beam epitaxy. Employing an aluminum buffer layer, epitaxial (001) films can be grown with sub-nm surface roughness. Using x-ray diffraction, in situ low-energy electron diffraction, and aberration-corrected scanning transmission electron microscopy, we establish that the films are ordered in the bulk as well as at the surface. Our films show a coherence temperature of 37 K, comparable to that reported for bulk single crystals. Photoelectron spectroscopy reveals contributions from both f{sup 13} and f{sup 12} final states establishing that YbAl{sub 3} is a mixed valence compound and shows the presence of a Kondo Resonance peak near the Fermi-level.

Authors:
 [1];  [2];  [3];  [2];  [4];  [5];  [4];  [1];  [4]
  1. Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853 (United States)
  2. School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 (United States)
  3. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853 (United States)
  4. (United States)
  5. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
Publication Date:
OSTI Identifier:
22597766
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; BUFFERS; COMPARATIVE EVALUATIONS; CRYSTAL GROWTH; ELECTRON DIFFRACTION; FERMI LEVEL; LAYERS; MAGNESIUM OXIDES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOCRYSTALS; PHOTOELECTRON SPECTROSCOPY; ROUGHNESS; SURFACES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VALENCE; X-RAY DIFFRACTION

Citation Formats

Chatterjee, Shouvik, Sung, Suk Hyun, Baek, David J., Kourkoutis, Lena F., Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, Schlom, Darrell G., Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, Shen, Kyle M., and Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853. Epitaxial growth and electronic properties of mixed valence YbAl{sub 3} thin films. United States: N. p., 2016. Web. doi:10.1063/1.4958336.
Chatterjee, Shouvik, Sung, Suk Hyun, Baek, David J., Kourkoutis, Lena F., Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, Schlom, Darrell G., Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, Shen, Kyle M., & Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853. Epitaxial growth and electronic properties of mixed valence YbAl{sub 3} thin films. United States. doi:10.1063/1.4958336.
Chatterjee, Shouvik, Sung, Suk Hyun, Baek, David J., Kourkoutis, Lena F., Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, Schlom, Darrell G., Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, Shen, Kyle M., and Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853. 2016. "Epitaxial growth and electronic properties of mixed valence YbAl{sub 3} thin films". United States. doi:10.1063/1.4958336.
@article{osti_22597766,
title = {Epitaxial growth and electronic properties of mixed valence YbAl{sub 3} thin films},
author = {Chatterjee, Shouvik and Sung, Suk Hyun and Baek, David J. and Kourkoutis, Lena F. and Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 and Schlom, Darrell G. and Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 and Shen, Kyle M. and Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853},
abstractNote = {We report the growth of thin films of the mixed valence compound YbAl{sub 3} on MgO using molecular-beam epitaxy. Employing an aluminum buffer layer, epitaxial (001) films can be grown with sub-nm surface roughness. Using x-ray diffraction, in situ low-energy electron diffraction, and aberration-corrected scanning transmission electron microscopy, we establish that the films are ordered in the bulk as well as at the surface. Our films show a coherence temperature of 37 K, comparable to that reported for bulk single crystals. Photoelectron spectroscopy reveals contributions from both f{sup 13} and f{sup 12} final states establishing that YbAl{sub 3} is a mixed valence compound and shows the presence of a Kondo Resonance peak near the Fermi-level.},
doi = {10.1063/1.4958336},
journal = {Journal of Applied Physics},
number = 3,
volume = 120,
place = {United States},
year = 2016,
month = 7
}