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Title: Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current

Abstract

We report the demonstration of dilute nitride heterostructure core/shell microwire solar cells utilizing the combination of top-down reactive-ion etching to create the cores (GaP) and molecular beam epitaxy to create the shells (GaNP). Systematic studies of cell performance over a series of microwire lengths, array periods, and microwire sidewall morphologies examined by transmission electron microscopy were conducted to shed light on performance-limiting factors and to optimize the cell efficiency. We show by microscopy and correlated external quantum efficiency characterization that the open circuit voltage is degraded primarily due to the presence of defects at the GaP/GaNP interface and in the GaNP shells, and is not limited by surface recombination. Compared to thin film solar cells in the same growth run, the microwire solar cells exhibit greater short circuit current but poorer open circuit voltage due to greater light absorption and number of defects in the microwire structure, respectively. The comprehensive understanding presented in this work suggests that performance benefits of dilute nitride microwire solar cells can be achieved by further tuning of the epitaxial quality of the underlying materials.

Authors:
 [1]; ;  [2];  [3];  [4]; ;  [1];  [5]
  1. Graduate Program of Materials Science and Engineering, University of California, San Diego, La Jolla, California 92037 (United States)
  2. Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92037 (United States)
  3. Department of Nanoengineering, University of California, San Diego, La Jolla, California 92037 (United States)
  4. Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
  5. (United States)
Publication Date:
OSTI Identifier:
22597743
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 5; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPARATIVE EVALUATIONS; ELECTRIC POTENTIAL; ELECTRICAL FAULTS; ELECTRONS; ETCHING; GALLIUM PHOSPHIDES; IONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MORPHOLOGY; PERFORMANCE; P-N JUNCTIONS; QUANTUM EFFICIENCY; SHELLS; SOLAR CELLS; SURFACES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Sukrittanon, Supanee, Liu, Ren, Pan, Janet L., Breeden, Michael C., Jungjohann, K. L., Tu, Charles W., E-mail: ctu@ece.ucsd.edu, E-mail: sdayeh@ece.ucsd.edu, Dayeh, Shadi A., E-mail: ctu@ece.ucsd.edu, E-mail: sdayeh@ece.ucsd.edu, and Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92037. Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current. United States: N. p., 2016. Web. doi:10.1063/1.4959821.
Sukrittanon, Supanee, Liu, Ren, Pan, Janet L., Breeden, Michael C., Jungjohann, K. L., Tu, Charles W., E-mail: ctu@ece.ucsd.edu, E-mail: sdayeh@ece.ucsd.edu, Dayeh, Shadi A., E-mail: ctu@ece.ucsd.edu, E-mail: sdayeh@ece.ucsd.edu, & Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92037. Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current. United States. doi:10.1063/1.4959821.
Sukrittanon, Supanee, Liu, Ren, Pan, Janet L., Breeden, Michael C., Jungjohann, K. L., Tu, Charles W., E-mail: ctu@ece.ucsd.edu, E-mail: sdayeh@ece.ucsd.edu, Dayeh, Shadi A., E-mail: ctu@ece.ucsd.edu, E-mail: sdayeh@ece.ucsd.edu, and Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92037. Sun . "Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current". United States. doi:10.1063/1.4959821.
@article{osti_22597743,
title = {Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current},
author = {Sukrittanon, Supanee and Liu, Ren and Pan, Janet L. and Breeden, Michael C. and Jungjohann, K. L. and Tu, Charles W., E-mail: ctu@ece.ucsd.edu, E-mail: sdayeh@ece.ucsd.edu and Dayeh, Shadi A., E-mail: ctu@ece.ucsd.edu, E-mail: sdayeh@ece.ucsd.edu and Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92037},
abstractNote = {We report the demonstration of dilute nitride heterostructure core/shell microwire solar cells utilizing the combination of top-down reactive-ion etching to create the cores (GaP) and molecular beam epitaxy to create the shells (GaNP). Systematic studies of cell performance over a series of microwire lengths, array periods, and microwire sidewall morphologies examined by transmission electron microscopy were conducted to shed light on performance-limiting factors and to optimize the cell efficiency. We show by microscopy and correlated external quantum efficiency characterization that the open circuit voltage is degraded primarily due to the presence of defects at the GaP/GaNP interface and in the GaNP shells, and is not limited by surface recombination. Compared to thin film solar cells in the same growth run, the microwire solar cells exhibit greater short circuit current but poorer open circuit voltage due to greater light absorption and number of defects in the microwire structure, respectively. The comprehensive understanding presented in this work suggests that performance benefits of dilute nitride microwire solar cells can be achieved by further tuning of the epitaxial quality of the underlying materials.},
doi = {10.1063/1.4959821},
journal = {Journal of Applied Physics},
number = 5,
volume = 120,
place = {United States},
year = {Sun Aug 07 00:00:00 EDT 2016},
month = {Sun Aug 07 00:00:00 EDT 2016}
}