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Title: Band offsets for biaxially and uniaxially stressed silicon-germanium layers with arbitrary substrate and channel orientations

Abstract

The conduction and valence band offsets between a strained silicon-germanium layer and a silicon-germanium substrate are reported for arbitrary substrate and channel crystal orientations. The offsets are calculated both for the case of biaxial stress, corresponding approximately to the stress state of a thin strained channel in a planar field-effect transistor (FET), and for uniaxial stress, which is the approximate stress state for strained channels in a FinFET configuration. Significant orientation dependence is found for the conduction band offset, overall leading to the strongest electron quantum confinement in biaxial-tensile stressed channels on {100}-oriented substrates, and uniaxial-tensile stressed channels in the 〈100〉 and 〈110〉 directions. For biaxially stressed layers on {111} substrates, the conduction band offset is significantly smaller than for {100} or {110} directions. For the valence band offset, the dependence on crystal orientation is found to be small.

Authors:
; ; ; ; ;  [1]
  1. Imec, Kapeldreef 75, 3001 Heverlee (Belgium)
Publication Date:
OSTI Identifier:
22597739
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 5; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CONFINEMENT; CRYSTALS; ELECTRONS; FIELD EFFECT TRANSISTORS; GERMANIUM; LAYERS; SILICON; STRAINS; STRESSES; SUBSTRATES; VALENCE

Citation Formats

Eneman, Geert, Roussel, Philippe, Brunco, David Paul, Collaert, Nadine, Mocuta, Anda, and Thean, Aaron. Band offsets for biaxially and uniaxially stressed silicon-germanium layers with arbitrary substrate and channel orientations. United States: N. p., 2016. Web. doi:10.1063/1.4960140.
Eneman, Geert, Roussel, Philippe, Brunco, David Paul, Collaert, Nadine, Mocuta, Anda, & Thean, Aaron. Band offsets for biaxially and uniaxially stressed silicon-germanium layers with arbitrary substrate and channel orientations. United States. doi:10.1063/1.4960140.
Eneman, Geert, Roussel, Philippe, Brunco, David Paul, Collaert, Nadine, Mocuta, Anda, and Thean, Aaron. Sun . "Band offsets for biaxially and uniaxially stressed silicon-germanium layers with arbitrary substrate and channel orientations". United States. doi:10.1063/1.4960140.
@article{osti_22597739,
title = {Band offsets for biaxially and uniaxially stressed silicon-germanium layers with arbitrary substrate and channel orientations},
author = {Eneman, Geert and Roussel, Philippe and Brunco, David Paul and Collaert, Nadine and Mocuta, Anda and Thean, Aaron},
abstractNote = {The conduction and valence band offsets between a strained silicon-germanium layer and a silicon-germanium substrate are reported for arbitrary substrate and channel crystal orientations. The offsets are calculated both for the case of biaxial stress, corresponding approximately to the stress state of a thin strained channel in a planar field-effect transistor (FET), and for uniaxial stress, which is the approximate stress state for strained channels in a FinFET configuration. Significant orientation dependence is found for the conduction band offset, overall leading to the strongest electron quantum confinement in biaxial-tensile stressed channels on {100}-oriented substrates, and uniaxial-tensile stressed channels in the 〈100〉 and 〈110〉 directions. For biaxially stressed layers on {111} substrates, the conduction band offset is significantly smaller than for {100} or {110} directions. For the valence band offset, the dependence on crystal orientation is found to be small.},
doi = {10.1063/1.4960140},
journal = {Journal of Applied Physics},
number = 5,
volume = 120,
place = {United States},
year = {Sun Aug 07 00:00:00 EDT 2016},
month = {Sun Aug 07 00:00:00 EDT 2016}
}