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Title: Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy

Abstract

The efficacy of Ni as a surfactant to improve the crystalline quality of graphene grown directly on dielectric Al{sub 2}O{sub 3}(0001) substrates by molecular beam epitaxy is examined. Simultaneously exposing the substrate to a Ni flux throughout C deposition at 950 °C led to improved charge carrier mobility and a Raman spectrum indicating less structural disorder in the resulting nanocrystalline graphene film. X-ray photoelectron spectroscopy confirmed that no residual Ni could be detected in the film and showed a decrease in the intensity of the defect-related component of the C1s level. Similar improvements were not observed when a lower substrate temperature (850 °C) was used. A close examination of the Raman spectra suggests that Ni reduces the concentration of lattice vacancies in the film, possibly by catalytically assisting adatom incorporation.

Authors:
; ;  [1]; ;  [2]
  1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
  2. Technische Universität Chemnitz, Institut für Physik, Reichenhainer Str. 70, 09126 Chemnitz (Germany)
Publication Date:
OSTI Identifier:
22597729
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 4; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; CARRIER MOBILITY; CHARGE CARRIERS; DIELECTRIC MATERIALS; FILMS; GRAPHENE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOSTRUCTURES; NICKEL; RAMAN SPECTRA; SUBSTRATES; SURFACTANTS; VACANCIES; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Wofford, Joseph M., E-mail: joewofford@gmail.com, E-mail: lopes@pdi-berlin.de, Lopes, Joao Marcelo J., E-mail: joewofford@gmail.com, E-mail: lopes@pdi-berlin.de, Riechert, Henning, Speck, Florian, and Seyller, Thomas. Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy. United States: N. p., 2016. Web. doi:10.1063/1.4958862.
Wofford, Joseph M., E-mail: joewofford@gmail.com, E-mail: lopes@pdi-berlin.de, Lopes, Joao Marcelo J., E-mail: joewofford@gmail.com, E-mail: lopes@pdi-berlin.de, Riechert, Henning, Speck, Florian, & Seyller, Thomas. Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy. United States. doi:10.1063/1.4958862.
Wofford, Joseph M., E-mail: joewofford@gmail.com, E-mail: lopes@pdi-berlin.de, Lopes, Joao Marcelo J., E-mail: joewofford@gmail.com, E-mail: lopes@pdi-berlin.de, Riechert, Henning, Speck, Florian, and Seyller, Thomas. Thu . "Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy". United States. doi:10.1063/1.4958862.
@article{osti_22597729,
title = {Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy},
author = {Wofford, Joseph M., E-mail: joewofford@gmail.com, E-mail: lopes@pdi-berlin.de and Lopes, Joao Marcelo J., E-mail: joewofford@gmail.com, E-mail: lopes@pdi-berlin.de and Riechert, Henning and Speck, Florian and Seyller, Thomas},
abstractNote = {The efficacy of Ni as a surfactant to improve the crystalline quality of graphene grown directly on dielectric Al{sub 2}O{sub 3}(0001) substrates by molecular beam epitaxy is examined. Simultaneously exposing the substrate to a Ni flux throughout C deposition at 950 °C led to improved charge carrier mobility and a Raman spectrum indicating less structural disorder in the resulting nanocrystalline graphene film. X-ray photoelectron spectroscopy confirmed that no residual Ni could be detected in the film and showed a decrease in the intensity of the defect-related component of the C1s level. Similar improvements were not observed when a lower substrate temperature (850 °C) was used. A close examination of the Raman spectra suggests that Ni reduces the concentration of lattice vacancies in the film, possibly by catalytically assisting adatom incorporation.},
doi = {10.1063/1.4958862},
journal = {Journal of Applied Physics},
number = 4,
volume = 120,
place = {United States},
year = {Thu Jul 28 00:00:00 EDT 2016},
month = {Thu Jul 28 00:00:00 EDT 2016}
}