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Title: Chemical sputtering by H{sub 2}{sup +} and H{sub 3}{sup +} ions during silicon deposition

Abstract

We investigated chemical sputtering of silicon films by H{sub y}{sup +} ions (with y being 2 and 3) in an asymmetric VHF Plasma Enhanced Chemical Vapor Deposition (PECVD) discharge in detail. In experiments with discharges created with pure H{sub 2} inlet flows, we observed that more Si was etched from the powered than from the grounded electrode, and this resulted in a net deposition on the grounded electrode. With experimental input data from a power density series of discharges with pure H{sub 2} inlet flows, we were able to model this process with a chemical sputtering mechanism. The obtained chemical sputtering yields were (0.3–0.4) ± 0.1 Si atom per bombarding H{sub y}{sup +} ion at the grounded electrode and at the powered electrode the yield ranged from (0.4 to 0.65) ± 0.1. Subsequently, we investigated the role of chemical sputtering during PECVD deposition with a series of silane fractions S{sub F} (S{sub F}(%) = [SiH{sub 4}]/[H{sub 2}]*100) ranging from S{sub F} = 0% to 20%. We experimentally observed that the SiH{sub y}{sup +} flux is not proportional to S{sub F} but decreasing from S{sub F} = 3.4% to 20%. This counterintuitive SiH{sub y}{sup +} flux trend was partly explained by an increasing chemical sputtering rate withmore » decreasing S{sub F} and partly by the reaction between H{sub 3}{sup +} and SiH{sub 4} that forms SiH{sub 3}{sup +}.« less

Authors:
; ;  [1];  [2];  [3]
  1. Debye Institute for Nanomaterials Science-Physics of Devices, Utrecht University, 5656 AE Eindhoven (Netherlands)
  2. FOM Institute DIFFER-Dutch Institute for Fundamental Energy Research, 5600 HH Eindhoven (Netherlands)
  3. Department of Applied Physics, Plasma and Materials Processing, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)
Publication Date:
OSTI Identifier:
22597688
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 5; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ASYMMETRY; ATOMS; CHEMICAL VAPOR DEPOSITION; ELECTRODES; FILMS; HYDROGEN; HYDROGEN IONS 2 PLUS; HYDROGEN IONS 3 PLUS; PLASMA; POWER DENSITY; SILANES; SILICON; SPUTTERING; YTTRIUM IONS

Citation Formats

Landheer, K., E-mail: c.landheer@uu.nl, Poulios, I., Rath, J. K., Goedheer, W. J., and Schropp, R. E. I. Chemical sputtering by H{sub 2}{sup +} and H{sub 3}{sup +} ions during silicon deposition. United States: N. p., 2016. Web. doi:10.1063/1.4960351.
Landheer, K., E-mail: c.landheer@uu.nl, Poulios, I., Rath, J. K., Goedheer, W. J., & Schropp, R. E. I. Chemical sputtering by H{sub 2}{sup +} and H{sub 3}{sup +} ions during silicon deposition. United States. doi:10.1063/1.4960351.
Landheer, K., E-mail: c.landheer@uu.nl, Poulios, I., Rath, J. K., Goedheer, W. J., and Schropp, R. E. I. Sun . "Chemical sputtering by H{sub 2}{sup +} and H{sub 3}{sup +} ions during silicon deposition". United States. doi:10.1063/1.4960351.
@article{osti_22597688,
title = {Chemical sputtering by H{sub 2}{sup +} and H{sub 3}{sup +} ions during silicon deposition},
author = {Landheer, K., E-mail: c.landheer@uu.nl and Poulios, I. and Rath, J. K. and Goedheer, W. J. and Schropp, R. E. I.},
abstractNote = {We investigated chemical sputtering of silicon films by H{sub y}{sup +} ions (with y being 2 and 3) in an asymmetric VHF Plasma Enhanced Chemical Vapor Deposition (PECVD) discharge in detail. In experiments with discharges created with pure H{sub 2} inlet flows, we observed that more Si was etched from the powered than from the grounded electrode, and this resulted in a net deposition on the grounded electrode. With experimental input data from a power density series of discharges with pure H{sub 2} inlet flows, we were able to model this process with a chemical sputtering mechanism. The obtained chemical sputtering yields were (0.3–0.4) ± 0.1 Si atom per bombarding H{sub y}{sup +} ion at the grounded electrode and at the powered electrode the yield ranged from (0.4 to 0.65) ± 0.1. Subsequently, we investigated the role of chemical sputtering during PECVD deposition with a series of silane fractions S{sub F} (S{sub F}(%) = [SiH{sub 4}]/[H{sub 2}]*100) ranging from S{sub F} = 0% to 20%. We experimentally observed that the SiH{sub y}{sup +} flux is not proportional to S{sub F} but decreasing from S{sub F} = 3.4% to 20%. This counterintuitive SiH{sub y}{sup +} flux trend was partly explained by an increasing chemical sputtering rate with decreasing S{sub F} and partly by the reaction between H{sub 3}{sup +} and SiH{sub 4} that forms SiH{sub 3}{sup +}.},
doi = {10.1063/1.4960351},
journal = {Journal of Applied Physics},
number = 5,
volume = 120,
place = {United States},
year = {Sun Aug 07 00:00:00 EDT 2016},
month = {Sun Aug 07 00:00:00 EDT 2016}
}