skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Quantitative determination of optical and recombination losses in thin-film photovoltaic devices based on external quantum efficiency analysis

Abstract

In developing photovoltaic devices with high efficiencies, quantitative determination of the carrier loss is crucial. In conventional solar-cell characterization techniques, however, photocurrent reduction originating from parasitic light absorption and carrier recombination within the light absorber cannot be assessed easily. Here, we develop a general analysis scheme in which the optical and recombination losses in submicron-textured solar cells are evaluated systematically from external quantum efficiency (EQE) spectra. In this method, the optical absorption in solar cells is first deduced by imposing the anti-reflection condition in the calculation of the absorptance spectrum, and the carrier extraction from the light absorber layer is then modeled by considering a carrier collection length from the absorber interface. Our analysis method is appropriate for a wide variety of photovoltaic devices, including kesterite solar cells [Cu{sub 2}ZnSnSe{sub 4}, Cu{sub 2}ZnSnS{sub 4}, and Cu{sub 2}ZnSn(S,Se){sub 4}], zincblende CdTe solar cells, and hybrid perovskite (CH{sub 3}NH{sub 3}PbI{sub 3}) solar cells, and provides excellent fitting to numerous EQE spectra reported earlier. Based on the results obtained from our EQE analyses, we discuss the effects of parasitic absorption and carrier recombination in different types of solar cells.

Authors:
; ; ;  [1]; ; ; ; ;  [2]
  1. Department of Electrical, Electronic and Computer Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193 (Japan)
  2. Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)
Publication Date:
OSTI Identifier:
22597671
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 120; Journal Issue: 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; CADMIUM TELLURIDES; EXTRACTION; INTERFACES; LAYERS; LOSSES; PEROVSKITE; PHOTOCURRENTS; PHOTOVOLTAIC EFFECT; QUANTUM EFFICIENCY; RECOMBINATION; REFLECTION; SOLAR CELLS; SPECTRA; THIN FILMS; ZINC SULFIDES

Citation Formats

Nakane, Akihiro, Tamakoshi, Masato, Fujimoto, Shohei, Fujiwara, Hiroyuki, E-mail: fujiwara@gifu-u.ac.jp, Tampo, Hitoshi, Kim, Kang Min, Kim, Shinho, Shibata, Hajime, and Niki, Shigeru. Quantitative determination of optical and recombination losses in thin-film photovoltaic devices based on external quantum efficiency analysis. United States: N. p., 2016. Web. doi:10.1063/1.4960698.
Nakane, Akihiro, Tamakoshi, Masato, Fujimoto, Shohei, Fujiwara, Hiroyuki, E-mail: fujiwara@gifu-u.ac.jp, Tampo, Hitoshi, Kim, Kang Min, Kim, Shinho, Shibata, Hajime, & Niki, Shigeru. Quantitative determination of optical and recombination losses in thin-film photovoltaic devices based on external quantum efficiency analysis. United States. doi:10.1063/1.4960698.
Nakane, Akihiro, Tamakoshi, Masato, Fujimoto, Shohei, Fujiwara, Hiroyuki, E-mail: fujiwara@gifu-u.ac.jp, Tampo, Hitoshi, Kim, Kang Min, Kim, Shinho, Shibata, Hajime, and Niki, Shigeru. Sun . "Quantitative determination of optical and recombination losses in thin-film photovoltaic devices based on external quantum efficiency analysis". United States. doi:10.1063/1.4960698.
@article{osti_22597671,
title = {Quantitative determination of optical and recombination losses in thin-film photovoltaic devices based on external quantum efficiency analysis},
author = {Nakane, Akihiro and Tamakoshi, Masato and Fujimoto, Shohei and Fujiwara, Hiroyuki, E-mail: fujiwara@gifu-u.ac.jp and Tampo, Hitoshi and Kim, Kang Min and Kim, Shinho and Shibata, Hajime and Niki, Shigeru},
abstractNote = {In developing photovoltaic devices with high efficiencies, quantitative determination of the carrier loss is crucial. In conventional solar-cell characterization techniques, however, photocurrent reduction originating from parasitic light absorption and carrier recombination within the light absorber cannot be assessed easily. Here, we develop a general analysis scheme in which the optical and recombination losses in submicron-textured solar cells are evaluated systematically from external quantum efficiency (EQE) spectra. In this method, the optical absorption in solar cells is first deduced by imposing the anti-reflection condition in the calculation of the absorptance spectrum, and the carrier extraction from the light absorber layer is then modeled by considering a carrier collection length from the absorber interface. Our analysis method is appropriate for a wide variety of photovoltaic devices, including kesterite solar cells [Cu{sub 2}ZnSnSe{sub 4}, Cu{sub 2}ZnSnS{sub 4}, and Cu{sub 2}ZnSn(S,Se){sub 4}], zincblende CdTe solar cells, and hybrid perovskite (CH{sub 3}NH{sub 3}PbI{sub 3}) solar cells, and provides excellent fitting to numerous EQE spectra reported earlier. Based on the results obtained from our EQE analyses, we discuss the effects of parasitic absorption and carrier recombination in different types of solar cells.},
doi = {10.1063/1.4960698},
journal = {Journal of Applied Physics},
number = 6,
volume = 120,
place = {United States},
year = {Sun Aug 14 00:00:00 EDT 2016},
month = {Sun Aug 14 00:00:00 EDT 2016}
}