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Title: High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors

Abstract

Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz{sup 1/2}, while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.

Authors:
; ; ;  [1]; ;  [2]
  1. University of Messina, I-98166 Messina (Italy)
  2. IMM-CNR, I-00133 Rome (Italy)
Publication Date:
OSTI Identifier:
22597136
Resource Type:
Journal Article
Journal Name:
Review of Scientific Instruments
Additional Journal Information:
Journal Volume: 87; Journal Issue: 4; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0034-6748
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITANCE; DIRECT CURRENT; ELECTRIC POTENTIAL; ELECTRONS; EQUIPMENT; FIELD EFFECT TRANSISTORS; FLUCTUATIONS; NOISE; PERFORMANCE; SENSITIVITY; STRESSES; THIN FILMS; TOPOLOGY

Citation Formats

Giusi, G., Giordano, O., Scandurra, G., Ciofi, C., Rapisarda, M., and Calvi, S. High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors. United States: N. p., 2016. Web. doi:10.1063/1.4945263.
Giusi, G., Giordano, O., Scandurra, G., Ciofi, C., Rapisarda, M., & Calvi, S. High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors. United States. https://doi.org/10.1063/1.4945263
Giusi, G., Giordano, O., Scandurra, G., Ciofi, C., Rapisarda, M., and Calvi, S. 2016. "High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors". United States. https://doi.org/10.1063/1.4945263.
@article{osti_22597136,
title = {High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors},
author = {Giusi, G. and Giordano, O. and Scandurra, G. and Ciofi, C. and Rapisarda, M. and Calvi, S.},
abstractNote = {Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz{sup 1/2}, while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.},
doi = {10.1063/1.4945263},
url = {https://www.osti.gov/biblio/22597136}, journal = {Review of Scientific Instruments},
issn = {0034-6748},
number = 4,
volume = 87,
place = {United States},
year = {2016},
month = {4}
}