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Title: Temperature dependence of the photoluminescence polarization of ordered III-V semiconductor alloys

Abstract

We studied the linear polarization of the photoluminescence (PL) emission of atomically ordered GaInAsP and GaInP alloys with different ordering parameters in the temperature range from 10 to 300 K. The epitaxial layers of these alloys were grown on GaAs and Ge (001) substrates by metal organic vapor phase epitaxy. The polarization of the PL emission propagating along different crystallographic axes depends on the value of biaxial strain in the layer and changes with temperature. We calculated the PL polarization patterns for different propagation directions as a function of biaxial strain using an existing model developed for ternary atomically ordered III-V alloys. Comparing the calculated PL polarization patterns with those obtained experimentally, we separated the variation of the PL polarization due to change of biaxial strain with temperature.

Authors:
;  [1];  [2]
  1. Instituto de Ciencias, BUAP, Privada 17 Norte, No 3417, col. San Miguel Huyeotlipan, 72050 Puebla, Pue. (Mexico)
  2. IMEM/CNR, Parco Area delle Scienze 37/A, 43010 Parma (Italy)
Publication Date:
OSTI Identifier:
22596925
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 11; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPARATIVE EVALUATIONS; CRYSTALLOGRAPHY; GALLIUM ALLOYS; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM ALLOYS; INDIUM PHOSPHIDES; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; POLARIZATION; SEMICONDUCTOR MATERIALS; STRAINS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; VAPOR PHASE EPITAXY; VAPORS

Citation Formats

Prutskij, T., Makarov, N., and Attolini, G. Temperature dependence of the photoluminescence polarization of ordered III-V semiconductor alloys. United States: N. p., 2016. Web. doi:10.1063/1.4944436.
Prutskij, T., Makarov, N., & Attolini, G. Temperature dependence of the photoluminescence polarization of ordered III-V semiconductor alloys. United States. doi:10.1063/1.4944436.
Prutskij, T., Makarov, N., and Attolini, G. Mon . "Temperature dependence of the photoluminescence polarization of ordered III-V semiconductor alloys". United States. doi:10.1063/1.4944436.
@article{osti_22596925,
title = {Temperature dependence of the photoluminescence polarization of ordered III-V semiconductor alloys},
author = {Prutskij, T. and Makarov, N. and Attolini, G.},
abstractNote = {We studied the linear polarization of the photoluminescence (PL) emission of atomically ordered GaInAsP and GaInP alloys with different ordering parameters in the temperature range from 10 to 300 K. The epitaxial layers of these alloys were grown on GaAs and Ge (001) substrates by metal organic vapor phase epitaxy. The polarization of the PL emission propagating along different crystallographic axes depends on the value of biaxial strain in the layer and changes with temperature. We calculated the PL polarization patterns for different propagation directions as a function of biaxial strain using an existing model developed for ternary atomically ordered III-V alloys. Comparing the calculated PL polarization patterns with those obtained experimentally, we separated the variation of the PL polarization due to change of biaxial strain with temperature.},
doi = {10.1063/1.4944436},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 119,
place = {United States},
year = {2016},
month = {3}
}