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Title: Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaP

Abstract

We report on the Ge auto-doping and out-diffusion in InGaP epilayer with Cu-Pt ordering grown on 4-in. Ge substrate. Ge profiles determined from secondary ion mass spectrometry indicate that the Ge out-diffusion depth is within 100 nm. However, the edge of the wafer suffers from stronger Ge gas-phase auto-doping than the center, leading to ordering deterioration in the InGaP epilayer. In the edge, we observed a residual Cu-Pt ordering layer left beneath the surface, suggesting that the ordering deterioration takes place after the deposition rather than during the deposition and In/Ga inter-diffusion enhanced by Ge vapor-phase auto-doping is responsible for the deterioration. We thus propose a di-vacancy diffusion model, in which the amphoteric Ge increases the di-vacancy density, resulting in a Ge density dependent diffusion. In the model, the In/Ga inter-diffusion and Ge out-diffusion are realized by the random hopping of In/Ga host atoms and Ge atoms to di-vacancies, respectively. Simulation based on this model well fits the Ge out-diffusion profiles, suggesting its validity. By comparing the Ge diffusion coefficient obtained from the fitting and the characteristic time constant of ordering deterioration estimated from the residual ordering layer, we found that the hopping rates of Ge and the host atoms aremore » in the same order of magnitude, indicating that di-vacancies are bound in the vicinity of Ge atoms.« less

Authors:
;  [1];  [2];  [1];  [3]
  1. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
  2. Visual Photonics Epitaxy Co., Ltd., Ping-Jen City 324, Taiwan (China)
  3. (China)
Publication Date:
OSTI Identifier:
22596921
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 11; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMS; COMPARATIVE EVALUATIONS; COPPER; DENSITY; DEPOSITION; DEPTH; DIFFUSION; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; IONS; LAYERS; MASS SPECTROSCOPY; PLATINUM; SUBSTRATES; SURFACES; VACANCIES; VAPORS

Citation Formats

Wu, Hong-Ming, Ho, Hao-I, Tsai, Shi-Jane, Lin, Hao-Hsiung, E-mail: hhlin@ntu.edu.tw, and Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan. Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaP. United States: N. p., 2016. Web. doi:10.1063/1.4944322.
Wu, Hong-Ming, Ho, Hao-I, Tsai, Shi-Jane, Lin, Hao-Hsiung, E-mail: hhlin@ntu.edu.tw, & Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan. Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaP. United States. doi:10.1063/1.4944322.
Wu, Hong-Ming, Ho, Hao-I, Tsai, Shi-Jane, Lin, Hao-Hsiung, E-mail: hhlin@ntu.edu.tw, and Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan. Mon . "Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaP". United States. doi:10.1063/1.4944322.
@article{osti_22596921,
title = {Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaP},
author = {Wu, Hong-Ming and Ho, Hao-I and Tsai, Shi-Jane and Lin, Hao-Hsiung, E-mail: hhlin@ntu.edu.tw and Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan},
abstractNote = {We report on the Ge auto-doping and out-diffusion in InGaP epilayer with Cu-Pt ordering grown on 4-in. Ge substrate. Ge profiles determined from secondary ion mass spectrometry indicate that the Ge out-diffusion depth is within 100 nm. However, the edge of the wafer suffers from stronger Ge gas-phase auto-doping than the center, leading to ordering deterioration in the InGaP epilayer. In the edge, we observed a residual Cu-Pt ordering layer left beneath the surface, suggesting that the ordering deterioration takes place after the deposition rather than during the deposition and In/Ga inter-diffusion enhanced by Ge vapor-phase auto-doping is responsible for the deterioration. We thus propose a di-vacancy diffusion model, in which the amphoteric Ge increases the di-vacancy density, resulting in a Ge density dependent diffusion. In the model, the In/Ga inter-diffusion and Ge out-diffusion are realized by the random hopping of In/Ga host atoms and Ge atoms to di-vacancies, respectively. Simulation based on this model well fits the Ge out-diffusion profiles, suggesting its validity. By comparing the Ge diffusion coefficient obtained from the fitting and the characteristic time constant of ordering deterioration estimated from the residual ordering layer, we found that the hopping rates of Ge and the host atoms are in the same order of magnitude, indicating that di-vacancies are bound in the vicinity of Ge atoms.},
doi = {10.1063/1.4944322},
journal = {Journal of Applied Physics},
number = 11,
volume = 119,
place = {United States},
year = {Mon Mar 21 00:00:00 EDT 2016},
month = {Mon Mar 21 00:00:00 EDT 2016}
}