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Title: Coupled optical and electrical study of thin-film InGaAs photodetector integrated with surface InP Mie resonators

Abstract

High-index dielectric and semiconductor nanostructures with characteristics of low absorption loss and artificially controlled scattering properties have grasped an increasing attention for improving the performance of thin-film photovoltaic devices. In this work, combined optical and electrical simulations were performed for thin-film InP/In{sub 0.53}Ga{sub 0.47}As/InP hetero-junction photodetector with periodically arranged InP nano-cylinders in the in-coupling configuration. It is found that the carefully designed InP nano-cylinders possess strongly substrate-coupled Mie resonances and can effectively couple incident light into the guided mode, both of which significantly increase optical absorption. Further study from the electrical aspects shows that enhancement of external quantum efficiency is as high as 82% and 83% in the configurations with the optimized nano-cylinders and the optimized period, respectively. Moreover, we demonstrate that the integration of InP nano-cylinders does not degrade the electrical performance, since the surface recombination is effectively suppressed by separating the absorber layer where carriers generate and the air/semiconductor interface. The comprehensive modeling including optical and electrical perspectives provides a more practical description for device performance than the optical-only simulation and is expected to advance the design of thin-film absorber layer based optoelectronic devices for fast response and high efficiency.

Authors:
; ; ; ; ; ; ;  [1];  [2]
  1. Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
  2. School of Physics and Optoelectronic Engineering, Xidian University, Xi'an, Shannxi 710071 (China)
Publication Date:
OSTI Identifier:
22596873
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 10; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; CYLINDERS; DIELECTRIC MATERIALS; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; NANOSTRUCTURES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTOVOLTAIC EFFECT; QUANTUM EFFICIENCY; RESONATORS; SEMICONDUCTOR MATERIALS; SIMULATION; SURFACES; THIN FILMS

Citation Formats

Fu, Dong, Song, Jiakun, Yu, Hailong, Zhang, Zuyin, Wang, Wenbo, Xu, Yun, Song, Guofeng, Wei, Xin, and Liu, Jietao. Coupled optical and electrical study of thin-film InGaAs photodetector integrated with surface InP Mie resonators. United States: N. p., 2016. Web. doi:10.1063/1.4943166.
Fu, Dong, Song, Jiakun, Yu, Hailong, Zhang, Zuyin, Wang, Wenbo, Xu, Yun, Song, Guofeng, Wei, Xin, & Liu, Jietao. Coupled optical and electrical study of thin-film InGaAs photodetector integrated with surface InP Mie resonators. United States. doi:10.1063/1.4943166.
Fu, Dong, Song, Jiakun, Yu, Hailong, Zhang, Zuyin, Wang, Wenbo, Xu, Yun, Song, Guofeng, Wei, Xin, and Liu, Jietao. Mon . "Coupled optical and electrical study of thin-film InGaAs photodetector integrated with surface InP Mie resonators". United States. doi:10.1063/1.4943166.
@article{osti_22596873,
title = {Coupled optical and electrical study of thin-film InGaAs photodetector integrated with surface InP Mie resonators},
author = {Fu, Dong and Song, Jiakun and Yu, Hailong and Zhang, Zuyin and Wang, Wenbo and Xu, Yun and Song, Guofeng and Wei, Xin and Liu, Jietao},
abstractNote = {High-index dielectric and semiconductor nanostructures with characteristics of low absorption loss and artificially controlled scattering properties have grasped an increasing attention for improving the performance of thin-film photovoltaic devices. In this work, combined optical and electrical simulations were performed for thin-film InP/In{sub 0.53}Ga{sub 0.47}As/InP hetero-junction photodetector with periodically arranged InP nano-cylinders in the in-coupling configuration. It is found that the carefully designed InP nano-cylinders possess strongly substrate-coupled Mie resonances and can effectively couple incident light into the guided mode, both of which significantly increase optical absorption. Further study from the electrical aspects shows that enhancement of external quantum efficiency is as high as 82% and 83% in the configurations with the optimized nano-cylinders and the optimized period, respectively. Moreover, we demonstrate that the integration of InP nano-cylinders does not degrade the electrical performance, since the surface recombination is effectively suppressed by separating the absorber layer where carriers generate and the air/semiconductor interface. The comprehensive modeling including optical and electrical perspectives provides a more practical description for device performance than the optical-only simulation and is expected to advance the design of thin-film absorber layer based optoelectronic devices for fast response and high efficiency.},
doi = {10.1063/1.4943166},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 10,
volume = 119,
place = {United States},
year = {2016},
month = {3}
}