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Title: Donor and double-donor transitions of the carbon vacancy related EH{sub 6∕7} deep level in 4H-SiC

Abstract

Using medium- and high-resolution multi-spectra fitting of deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS), optical O-DLTS and optical-electrical (OE)-MCTS measurements, we show that the EH{sub 6∕7} deep level in 4H-SiC is composed of two strongly overlapping, two electron emission processes with thermal activation energies of 1.49 eV and 1.58 eV for EH{sub 6} and 1.48 eV and 1.66 eV for EH{sub 7}. The electron emission peaks of EH{sub 7} completely overlap while the emission peaks of EH{sub 6} occur offset at slightly different temperatures in the spectra. OE-MCTS measurements of the hole capture cross section σ{sub p0}(T) in p-type samples reveal a trap-Auger process, whereby hole capture into the defect occupied by two electrons leads to a recombination event and the ejection of the second electron into the conduction band. Values of the hole and electron capture cross sections σ{sub n}(T) and σ{sub p}(T) differ strongly due to the donor like nature of the deep levels and while all σ{sub n}(T) have a negative temperature dependence, the σ{sub p}(T) appear to be temperature independent. Average values at the DLTS measurement temperature (∼600 K) are σ{sub n2+}(T) ≈ 1 × 10{sup −14} cm{sup 2}, σ{sub n+}(T) ≈ 1 × 10{sup −14} cm{sup 2}, and σ{sub p0}(T) ≈ 9 × 10{sup −18} cm{sup 2} for EH{sub 6} and σ{submore » n2+}(T) ≈ 2 × 10{sup −14} cm{sup 2}, σ{sub n+}(T) ≈ 2 × 10{sup −14} cm{sup 2}, σ{sub p0}(T) ≈ 1 × 10{sup −20} cm{sup 2} for EH{sub 7}. Since EH{sub 7} has already been identified as a donor transition of the carbon vacancy, we propose that the EH{sub 6∕7} center in total represents the overlapping first and second donor transitions of the carbon vacancy defects on both inequivalent lattice sites.« less

Authors:
; ; ; ;  [1];  [1];  [2]
  1. Department of Physics, Chemistry and Biology (IFM), Semiconductor Materials Division, Linköping University, 581 83 Linköping (Sweden)
  2. (Iceland)
Publication Date:
OSTI Identifier:
22596823
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 23; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; CARBON; CARRIERS; CROSS SECTIONS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON CAPTURE; ELECTRON EMISSION; HOLES; HYDROGEN 4; RECOMBINATION; SILICON CARBIDES; TEMPERATURE DEPENDENCE; VACANCIES

Citation Formats

Booker, I. D., E-mail: ianbo@ifm.liu.se, Janzén, E., E-mail: erija@ifm.liu.se, Son, N. T., Hassan, J., Stenberg, P., Sveinbjörnsson, E. Ö., E-mail: einars@hi.is, and Science Institute, University of Iceland, IS-107 Reykjavik. Donor and double-donor transitions of the carbon vacancy related EH{sub 6∕7} deep level in 4H-SiC. United States: N. p., 2016. Web. doi:10.1063/1.4954006.
Booker, I. D., E-mail: ianbo@ifm.liu.se, Janzén, E., E-mail: erija@ifm.liu.se, Son, N. T., Hassan, J., Stenberg, P., Sveinbjörnsson, E. Ö., E-mail: einars@hi.is, & Science Institute, University of Iceland, IS-107 Reykjavik. Donor and double-donor transitions of the carbon vacancy related EH{sub 6∕7} deep level in 4H-SiC. United States. doi:10.1063/1.4954006.
Booker, I. D., E-mail: ianbo@ifm.liu.se, Janzén, E., E-mail: erija@ifm.liu.se, Son, N. T., Hassan, J., Stenberg, P., Sveinbjörnsson, E. Ö., E-mail: einars@hi.is, and Science Institute, University of Iceland, IS-107 Reykjavik. Tue . "Donor and double-donor transitions of the carbon vacancy related EH{sub 6∕7} deep level in 4H-SiC". United States. doi:10.1063/1.4954006.
@article{osti_22596823,
title = {Donor and double-donor transitions of the carbon vacancy related EH{sub 6∕7} deep level in 4H-SiC},
author = {Booker, I. D., E-mail: ianbo@ifm.liu.se and Janzén, E., E-mail: erija@ifm.liu.se and Son, N. T. and Hassan, J. and Stenberg, P. and Sveinbjörnsson, E. Ö., E-mail: einars@hi.is and Science Institute, University of Iceland, IS-107 Reykjavik},
abstractNote = {Using medium- and high-resolution multi-spectra fitting of deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS), optical O-DLTS and optical-electrical (OE)-MCTS measurements, we show that the EH{sub 6∕7} deep level in 4H-SiC is composed of two strongly overlapping, two electron emission processes with thermal activation energies of 1.49 eV and 1.58 eV for EH{sub 6} and 1.48 eV and 1.66 eV for EH{sub 7}. The electron emission peaks of EH{sub 7} completely overlap while the emission peaks of EH{sub 6} occur offset at slightly different temperatures in the spectra. OE-MCTS measurements of the hole capture cross section σ{sub p0}(T) in p-type samples reveal a trap-Auger process, whereby hole capture into the defect occupied by two electrons leads to a recombination event and the ejection of the second electron into the conduction band. Values of the hole and electron capture cross sections σ{sub n}(T) and σ{sub p}(T) differ strongly due to the donor like nature of the deep levels and while all σ{sub n}(T) have a negative temperature dependence, the σ{sub p}(T) appear to be temperature independent. Average values at the DLTS measurement temperature (∼600 K) are σ{sub n2+}(T) ≈ 1 × 10{sup −14} cm{sup 2}, σ{sub n+}(T) ≈ 1 × 10{sup −14} cm{sup 2}, and σ{sub p0}(T) ≈ 9 × 10{sup −18} cm{sup 2} for EH{sub 6} and σ{sub n2+}(T) ≈ 2 × 10{sup −14} cm{sup 2}, σ{sub n+}(T) ≈ 2 × 10{sup −14} cm{sup 2}, σ{sub p0}(T) ≈ 1 × 10{sup −20} cm{sup 2} for EH{sub 7}. Since EH{sub 7} has already been identified as a donor transition of the carbon vacancy, we propose that the EH{sub 6∕7} center in total represents the overlapping first and second donor transitions of the carbon vacancy defects on both inequivalent lattice sites.},
doi = {10.1063/1.4954006},
journal = {Journal of Applied Physics},
number = 23,
volume = 119,
place = {United States},
year = {Tue Jun 21 00:00:00 EDT 2016},
month = {Tue Jun 21 00:00:00 EDT 2016}
}