Temperature dependent simulation of diamond depleted Schottky PIN diodes

Journal Article · Tue Jun 14 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4953385· OSTI ID:22596802

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti; Goodnick, Stephen M. ^[1]; Koeck, Franz A. M.; Nemanich, Robert J. ^[2]

---

1. Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-8806 (United States)
2. Department of Physics, Arizona State University, Tempe, Arizona 85287-8806 (United States)

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.

• OSTI ID: 22596802
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 22; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
A CODES
ACTIVATION ENERGY
BORON
BREAKDOWN
CARRIER MOBILITY
COMPARATIVE EVALUATIONS
COMPUTERIZED SIMULATION
CURRENT DENSITY
DIAMONDS
DOPED MATERIALS
ELECTRIC POTENTIAL
ELECTRONIC STRUCTURE
IMPURITIES
PHOSPHORUS
S CODES
SCHOTTKY BARRIER DIODES
TEMPERATURE DEPENDENCE
THERMAL CONDUCTIVITY
THREE-DIMENSIONAL CALCULATIONS