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Title: Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices

Abstract

The optical properties of bulk InAs{sub 0.936}Bi{sub 0.064} grown by molecular beam epitaxy on a (100)-oriented GaSb substrate are measured using spectroscopic ellipsometry. The index of refraction and absorption coefficient are measured over photon energies ranging from 44 meV to 4.4 eV and are used to identify the room temperature bandgap energy of bulk InAs{sub 0.936}Bi{sub 0.064} as 60.6 meV. The bandgap of InAsBi is expressed as a function of Bi mole fraction using the band anticrossing model and a characteristic coupling strength of 1.529 eV between the Bi impurity state and the InAs valence band. These results are programmed into a software tool that calculates the miniband structure of semiconductor superlattices and identifies optimal designs in terms of maximizing the electron-hole wavefunction overlap as a function of transition energy. These functionalities are demonstrated by mapping the design spaces of lattice-matched GaSb/InAs{sub 0.911}Sb{sub 0.089} and GaSb/InAs{sub 0.932}Bi{sub 0.068} and strain-balanced InAs/InAsSb, InAs/GaInSb, and InAs/InAsBi superlattices on GaSb. The absorption properties of each of these material systems are directly compared by relating the wavefunction overlap square to the absorption coefficient of each optimized design. Optimal design criteria are provided for key detector wavelengths for each superlattice system. The optimal design mid-wave infrared InAs/InAsSb superlattice ismore » grown using molecular beam epitaxy, and its optical properties are evaluated using spectroscopic ellipsometry and photoluminescence spectroscopy.« less

Authors:
; ; ; ;  [1];  [2]
  1. Center for Photonics Innovation and School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States)
  2. Center for Photonics Innovation and School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287 (United States)
Publication Date:
OSTI Identifier:
22596801
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 22; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BALANCES; BISMUTH COMPOUNDS; COMPARATIVE EVALUATIONS; COMPUTER CODES; ELECTRONS; ELLIPSOMETRY; GALLIUM ANTIMONIDES; HOLES; IMPURITIES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTOLUMINESCENCE; PHOTONS; REFRACTIVE INDEX; SEMICONDUCTOR MATERIALS; STRAINS; SUPERLATTICES; TEMPERATURE RANGE 0273-0400 K; WAVE FUNCTIONS

Citation Formats

Webster, P. T., E-mail: preston.t.webster@asu.edu, Riordan, N. A., Gogineni, C., Liang, H., Sharma, A. R., Johnson, S. R., and Shalindar, A. J. Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices. United States: N. p., 2016. Web. doi:10.1063/1.4953027.
Webster, P. T., E-mail: preston.t.webster@asu.edu, Riordan, N. A., Gogineni, C., Liang, H., Sharma, A. R., Johnson, S. R., & Shalindar, A. J. Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices. United States. doi:10.1063/1.4953027.
Webster, P. T., E-mail: preston.t.webster@asu.edu, Riordan, N. A., Gogineni, C., Liang, H., Sharma, A. R., Johnson, S. R., and Shalindar, A. J. Tue . "Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices". United States. doi:10.1063/1.4953027.
@article{osti_22596801,
title = {Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices},
author = {Webster, P. T., E-mail: preston.t.webster@asu.edu and Riordan, N. A. and Gogineni, C. and Liang, H. and Sharma, A. R. and Johnson, S. R. and Shalindar, A. J.},
abstractNote = {The optical properties of bulk InAs{sub 0.936}Bi{sub 0.064} grown by molecular beam epitaxy on a (100)-oriented GaSb substrate are measured using spectroscopic ellipsometry. The index of refraction and absorption coefficient are measured over photon energies ranging from 44 meV to 4.4 eV and are used to identify the room temperature bandgap energy of bulk InAs{sub 0.936}Bi{sub 0.064} as 60.6 meV. The bandgap of InAsBi is expressed as a function of Bi mole fraction using the band anticrossing model and a characteristic coupling strength of 1.529 eV between the Bi impurity state and the InAs valence band. These results are programmed into a software tool that calculates the miniband structure of semiconductor superlattices and identifies optimal designs in terms of maximizing the electron-hole wavefunction overlap as a function of transition energy. These functionalities are demonstrated by mapping the design spaces of lattice-matched GaSb/InAs{sub 0.911}Sb{sub 0.089} and GaSb/InAs{sub 0.932}Bi{sub 0.068} and strain-balanced InAs/InAsSb, InAs/GaInSb, and InAs/InAsBi superlattices on GaSb. The absorption properties of each of these material systems are directly compared by relating the wavefunction overlap square to the absorption coefficient of each optimized design. Optimal design criteria are provided for key detector wavelengths for each superlattice system. The optimal design mid-wave infrared InAs/InAsSb superlattice is grown using molecular beam epitaxy, and its optical properties are evaluated using spectroscopic ellipsometry and photoluminescence spectroscopy.},
doi = {10.1063/1.4953027},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 22,
volume = 119,
place = {United States},
year = {2016},
month = {6}
}