Design of low surface roughness-low residual stress-high optoelectronic merit a-IZO thin films for flexible OLEDs
- Functional and Renewable Energy Materials Laboratory, Indian Institute of Technology Ropar, Punjab 140001 (India)
- Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401 (United States)
The development of efficient and reliable large-area flexible optoelectronic devices demands low surface roughness-low residual stress-high optoelectronic merit transparent conducting oxide (TCO) thin films. Here, we correlate surface roughness-residual stress-optoelectronic properties of sputtered amorphous indium zinc oxide (a-IZO) thin films using a statistical design of experiment (DOE) approach and find a common growth space to achieve a smooth surface in a stress-free and high optoelectronic merit a-IZO thin film. The sputtering power, growth pressure, oxygen partial pressure, and RF/(RF+DC) are varied in a two-level system with a full factorial design, and results are used to deconvolve the complex growth space, identifying significant control growth parameters and their possible interactions. The surface roughness of a-IZO thin film varies over 0.19 nm to 3.97 nm, which is not in line with the general assumption of low surface roughness in a-IZO thin films. The initial regression model and analysis of variance reveal no single optimum growth sub-space to achieve low surface roughness (≤0.5 nm), low residual stress (−1 to 0 GPa), and industrially acceptable electrical conductivity (>1000 S/cm) for a-IZO thin films. The extrapolation of growth parameters in light of the current results and previous knowledge leads to a new sub-space, resulting in a low residual stress of −0.52±0.04 GPa, a low surface roughness of 0.55±0.03 nm, and moderate electrical conductivity of 1962±3.84 S/cm in a-IZO thin films. These results demonstrate the utility of the DOE approach to multi-parameter optimization, which provides an important tool for the development of flexible TCOs for the next-generation flexible organic light emitting diodes applications.
- OSTI ID:
- 22596800
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 22; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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journal | June 2019 |
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ELECTRIC CONDUCTIVITY
EXTRAPOLATION
LIGHT EMITTING DIODES
OPTIMIZATION
OPTOELECTRONIC DEVICES
OXYGEN
PARTIAL PRESSURE
RESIDUAL STRESSES
ROUGHNESS
SPUTTERING
SURFACES
THIN FILMS
ZINC
ZINC OXIDES