First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device
Abstract
Resistive Random Access Memories are among the most promising candidates for the next generation of non-volatile memory. Transition metal oxides such as HfOx and TaOx attracted a lot of attention due to their CMOS compatibility. Furthermore, these materials do not require the inclusion of extrinsic conducting defects since their operation is based on intrinsic ones (oxygen vacancies). Using Density Functional Theory, we evaluated the thermodynamics of the defects formation and the kinetics of diffusion of the conducting species active in transition metal oxide RRAM materials. The gained insights based on the thermodynamics in the Top Electrode, Insulating Matrix and Bottom Electrode and at the interfaces are used to design a proper defect reservoir, which is needed for a low-energy reliable switching device. The defect reservoir has also a direct impact on the retention of the Low Resistance State due to the resulting thermodynamic driving forces. The kinetics of the diffusing conducting defects in the Insulating Matrix determine the switching dynamics and resistance retention. The interface at the Bottom Electrode has a significant impact on the low-current operation and long endurance of the memory cell. Our first-principles findings are confirmed by experimental measurements on fabricated RRAM devices.
- Authors:
-
- imec, Kapeldreef 75, 3001 Leuven (Belgium)
- Publication Date:
- OSTI Identifier:
- 22596796
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 119; Journal Issue: 22; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPATIBILITY; DEFECTS; DENSITY FUNCTIONAL METHOD; DIFFUSION; ELECTRODES; EQUIPMENT; GAIN; INTERFACES; KINETICS; OXYGEN; RECOMMENDATIONS; RETENTION; THERMODYNAMICS; TRANSITION ELEMENTS; VACANCIES
Citation Formats
Clima, Sergiu, Chen, Yang Yin, Goux, Ludovic, Govoreanu, Bogdan, Degraeve, Robin, Fantini, Andrea, Jurczak, Malgorzata, Chen, Chao Yang, Katholieke Universiteit Leuven, 3001 Leuven, Pourtois, Geoffrey, and PLASMANT, University of Antwerp, 2610 Antwerpen. First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device. United States: N. p., 2016.
Web. doi:10.1063/1.4953673.
Clima, Sergiu, Chen, Yang Yin, Goux, Ludovic, Govoreanu, Bogdan, Degraeve, Robin, Fantini, Andrea, Jurczak, Malgorzata, Chen, Chao Yang, Katholieke Universiteit Leuven, 3001 Leuven, Pourtois, Geoffrey, & PLASMANT, University of Antwerp, 2610 Antwerpen. First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device. United States. https://doi.org/10.1063/1.4953673
Clima, Sergiu, Chen, Yang Yin, Goux, Ludovic, Govoreanu, Bogdan, Degraeve, Robin, Fantini, Andrea, Jurczak, Malgorzata, Chen, Chao Yang, Katholieke Universiteit Leuven, 3001 Leuven, Pourtois, Geoffrey, and PLASMANT, University of Antwerp, 2610 Antwerpen. 2016.
"First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device". United States. https://doi.org/10.1063/1.4953673.
@article{osti_22596796,
title = {First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device},
author = {Clima, Sergiu and Chen, Yang Yin and Goux, Ludovic and Govoreanu, Bogdan and Degraeve, Robin and Fantini, Andrea and Jurczak, Malgorzata and Chen, Chao Yang and Katholieke Universiteit Leuven, 3001 Leuven and Pourtois, Geoffrey and PLASMANT, University of Antwerp, 2610 Antwerpen},
abstractNote = {Resistive Random Access Memories are among the most promising candidates for the next generation of non-volatile memory. Transition metal oxides such as HfOx and TaOx attracted a lot of attention due to their CMOS compatibility. Furthermore, these materials do not require the inclusion of extrinsic conducting defects since their operation is based on intrinsic ones (oxygen vacancies). Using Density Functional Theory, we evaluated the thermodynamics of the defects formation and the kinetics of diffusion of the conducting species active in transition metal oxide RRAM materials. The gained insights based on the thermodynamics in the Top Electrode, Insulating Matrix and Bottom Electrode and at the interfaces are used to design a proper defect reservoir, which is needed for a low-energy reliable switching device. The defect reservoir has also a direct impact on the retention of the Low Resistance State due to the resulting thermodynamic driving forces. The kinetics of the diffusing conducting defects in the Insulating Matrix determine the switching dynamics and resistance retention. The interface at the Bottom Electrode has a significant impact on the low-current operation and long endurance of the memory cell. Our first-principles findings are confirmed by experimental measurements on fabricated RRAM devices.},
doi = {10.1063/1.4953673},
url = {https://www.osti.gov/biblio/22596796},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 22,
volume = 119,
place = {United States},
year = {Tue Jun 14 00:00:00 EDT 2016},
month = {Tue Jun 14 00:00:00 EDT 2016}
}