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Title: Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

Abstract

Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here, we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at. %. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.

Authors:
; ; ; ; ;  [1];  [2]
  1. School of Physics, University of Melbourne, Parkville, Victoria 3010 (Australia)
  2. SIMS Facility, Office of the Deputy-Vice Chancellor (Research and Development) Western Sydney University, Locked Bag 1797, Penrith, New South Wales 2751 (Australia)
Publication Date:
OSTI Identifier:
22596782
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 22; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; BORON; CARRIER DENSITY; CHARGE CARRIERS; CRYSTALS; DENSITY; DIAMONDS; GRAPHITIZATION; ION IMPLANTATION; IONS; LAYERS; MASS SPECTROSCOPY; METALS; MEV RANGE; PHASE TRANSFORMATIONS; PLATES; RAMAN SPECTROSCOPY; SURFACES; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0400-1000 K

Citation Formats

Willems van Beveren, L. H., E-mail: laurensw@unimelb.edu.au, Bowers, H., Ganesan, K., Johnson, B. C., McCallum, J. C., Prawer, S., and Liu, R.. Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures. United States: N. p., 2016. Web. doi:10.1063/1.4953583.
Willems van Beveren, L. H., E-mail: laurensw@unimelb.edu.au, Bowers, H., Ganesan, K., Johnson, B. C., McCallum, J. C., Prawer, S., & Liu, R.. Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures. United States. doi:10.1063/1.4953583.
Willems van Beveren, L. H., E-mail: laurensw@unimelb.edu.au, Bowers, H., Ganesan, K., Johnson, B. C., McCallum, J. C., Prawer, S., and Liu, R.. 2016. "Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures". United States. doi:10.1063/1.4953583.
@article{osti_22596782,
title = {Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures},
author = {Willems van Beveren, L. H., E-mail: laurensw@unimelb.edu.au and Bowers, H. and Ganesan, K. and Johnson, B. C. and McCallum, J. C. and Prawer, S. and Liu, R.},
abstractNote = {Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here, we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at. %. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.},
doi = {10.1063/1.4953583},
journal = {Journal of Applied Physics},
number = 22,
volume = 119,
place = {United States},
year = 2016,
month = 6
}
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