Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

Bowers, H.; Ganesan, K.; Johnson, B. C.; McCallum, J. C.; Prawer, S.; Liu, R.

doi:10.1063/1.4953583

Title: Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

Full Record
Other Related Research

Abstract

Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here, we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at. %. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.

Authors:

Bowers, H.; Ganesan, K.; Johnson, B. C.; McCallum, J. C.; Prawer, S. ^[1]; Liu, R. ^[2]

School of Physics, University of Melbourne, Parkville, Victoria 3010 (Australia)
SIMS Facility, Office of the Deputy-Vice Chancellor (Research and Development) Western Sydney University, Locked Bag 1797, Penrith, New South Wales 2751 (Australia)

Publication Date:: Tue Jun 14 00:00:00 EDT 2016

OSTI Identifier:: 22596782

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 119; Journal Issue: 22; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; BORON; CARRIER DENSITY; CHARGE CARRIERS; CRYSTALS; DENSITY; DIAMONDS; GRAPHITIZATION; ION IMPLANTATION; IONS; LAYERS; MASS SPECTROSCOPY; METALS; MEV RANGE; PHASE TRANSFORMATIONS; PLATES; RAMAN SPECTROSCOPY; SURFACES; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0400-1000 K

Citation Formats


                    Willems van Beveren, L. H., E-mail: laurensw@unimelb.edu.au, Bowers, H., Ganesan, K., Johnson, B. C., McCallum, J. C., Prawer, S., and Liu, R. Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures.  United States: N. p., 2016. 
        Web.  doi:10.1063/1.4953583.

Copy to clipboard


                    Willems van Beveren, L. H., E-mail: laurensw@unimelb.edu.au, Bowers, H., Ganesan, K., Johnson, B. C., McCallum, J. C., Prawer, S., & Liu, R. Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures.  United States.  https://doi.org/10.1063/1.4953583

Copy to clipboard


                    Willems van Beveren, L. H., E-mail: laurensw@unimelb.edu.au, Bowers, H., Ganesan, K., Johnson, B. C., McCallum, J. C., Prawer, S., and Liu, R. 2016.  
        "Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures".  United States.  https://doi.org/10.1063/1.4953583.

Copy to clipboard


                    
@article{osti_22596782,

  title        = {Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures},

  author       = {Willems van Beveren, L. H., E-mail: laurensw@unimelb.edu.au and Bowers, H. and Ganesan, K. and Johnson, B. C. and McCallum, J. C. and Prawer, S. and Liu, R.},

  abstractNote = {Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here, we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at. %. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.},

  doi          = {10.1063/1.4953583},

  url          = {https://www.osti.gov/biblio/22596782},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 22,

  volume       = 119,

  place        = {United States},

  year         = {Tue Jun 14 00:00:00 EDT 2016},

  month        = {Tue Jun 14 00:00:00 EDT 2016}

}

Copy to clipboard

Journal Article:

https://doi.org/10.1063/1.4953583

Other availability

Find in Google Scholar

Search WorldCat to find libraries that may hold this journal

Save / Share:

Export Metadata

Save to My Library

Similar records in OSTI.GOV collections:

Materials processing diamond: etching, doping by ion implantation, and contact formation. Annual technical report, 1 October 1987-30 September 1988

Technical Report Chu, W

Natural diamond was doped with B or P ion implantation at liquid nitrogen temperature. Ions of C were implanted prior to the dopant implants, in order to enhance the vacancy concentration in the diamond, thereby increasing the likelihood that the dopant atoms would occupy substitutional lattice sites, and thus be electrically active. Various post-implantation annealing methods were employed to reduce the residual damage in the crystals. Type IIa diamond crystals were implanted with boron ions with or without prior carbon-ion implantation. The samples were kept at liquid nitrogen temperature during both implantation steps. A strong near-edge optical absorption band appearedmore »« less
Boron-implanted profiles in diamond

Journal Article Blanchard, B; Combasson, J; Bourgoin, J - Appl. Phys. Lett., v. 28, no. 1, pp. 7-8

Boron ions with energy ranging from 40 to 250 kev have been implanted at room temperature in type-IIa diamonds with doses of 10$sup 15$ and 10$sup 16$ cm$sup -2$. The boron profiles have been measured using an ion analyzer. These profiles are compared with profiles calculated using Winterbon's theory. Reasonable agreement between experimental and theoretical profiles is obtained for the electronic stopping cross section measured by Omrod et al. up to about 180 keV. (AIP)
https://doi.org/10.1063/1.88573
Ion implantation doping of diamond

Miscellaneous Hunn, J

The introduction by ion implantation of electrical dopants into single crystal diamond for the formation of an extrinsic semiconductor has been studied. RBS/channeling and optical absorption have been used to study the radiation damage produced by implantation of carbon ions into single crystal diamond. Damage recovery by thermal annealing has been measured as a function of dose, anneal temperature, and anneal rate. Three dose dependent effects have been observed in the annealed samples. At low dose, recovery of the crystal structure was possible when annealed above 900[degrees]C. At high dose, sufficient amorphization caused a conversion to graphite upon annealing atmore »« less
Conduction in ion implanted single crystal diamond

Conference Hunn, J; Parikh, N; Swanson, M; ...

We have implanted sodium, phosphorus and arsenic into single crystal type IIa diamond as possible n-type dopants. Particular emphasis was applied to the implantation of sodium at different temperatures and doses; combined implantation energies of 55,80 and 120 keV were used to provide a uniformly doped layer over approximately 100 nm depth. The implanted layers exhibited semiconducting behavior with a single exponential activation energy between 0.40 and 0.48 eV, as determined by temperature dependent resistance measurements. A sample implanted to a concentration of 5.10{sup 19} Na{sup +}/cm{sup 3} at 550{degrees}C exhibited a single activation energy of 0.415 eV over amore »« less
Conduction in ion implanted single crystal diamond

Conference Hunn, J; Parikh, N; Swanson, M; ...

We have implanted sodium, phosphorus and arsenic into single crystal type IIa diamond as possible n-type dopants. Particular emphasis was applied to the implantation of sodium at different temperatures and doses; combined implantation energies of 55,80 and 120 keV were used to provide a uniformly doped layer over approximately 100 nm depth. The implanted layers exhibited semiconducting behavior with a single exponential activation energy between 0.40 and 0.48 eV, as determined by temperature dependent resistance measurements. A sample implanted to a concentration of 5.10{sup 19} Na{sup +}/cm{sup 3} at 550{degrees}C exhibited a single activation energy of 0.415 eV over amore »« less

Similar Records