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Title: Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiO{sub x} layers for application in solar cells

Abstract

Nanocrystalline silicon suboxides (nc-SiO{sub x}) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO{sub 0.8}:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.

Authors:
;  [1]; ;  [2];  [3];  [4];  [5]
  1. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)
  2. PVcomB, Helmholtz-Zentrum Berlin für Materialien und Energie, Schwarzschildstr. 3, 12489 Berlin (Germany)
  3. Technische Hochschule Wildau, Hochschulring 1, 15745 Wildau (Germany)
  4. Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 15109 Berlin (Germany)
  5. Institut für Optik und Atomare Physik, Technische Universität Berlin, Straße des 17. Juni 135, 10623 Berlin (Germany)
Publication Date:
OSTI Identifier:
22596778
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 119; Journal Issue: 22; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; CHEMICAL VAPOR DEPOSITION; CRYSTALS; DOPED MATERIALS; ELECTRON DIFFRACTION; ELECTRONS; ELLIPSOMETRY; FILAMENTS; LAYERS; NANOSTRUCTURES; OPTICAL PROPERTIES; PLASMA; PLASMONS; RAMAN SPECTROSCOPY; SILICON OXIDES; SILICON SOLAR CELLS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Klingsporn, M., Costina, I., Kirner, S., Stannowski, B., Villringer, C., Abou-Ras, D., and Lehmann, M.. Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiO{sub x} layers for application in solar cells. United States: N. p., 2016. Web. doi:10.1063/1.4953566.
Klingsporn, M., Costina, I., Kirner, S., Stannowski, B., Villringer, C., Abou-Ras, D., & Lehmann, M.. Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiO{sub x} layers for application in solar cells. United States. doi:10.1063/1.4953566.
Klingsporn, M., Costina, I., Kirner, S., Stannowski, B., Villringer, C., Abou-Ras, D., and Lehmann, M.. Tue . "Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiO{sub x} layers for application in solar cells". United States. doi:10.1063/1.4953566.
@article{osti_22596778,
title = {Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiO{sub x} layers for application in solar cells},
author = {Klingsporn, M. and Costina, I. and Kirner, S. and Stannowski, B. and Villringer, C. and Abou-Ras, D. and Lehmann, M.},
abstractNote = {Nanocrystalline silicon suboxides (nc-SiO{sub x}) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO{sub 0.8}:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.},
doi = {10.1063/1.4953566},
journal = {Journal of Applied Physics},
number = 22,
volume = 119,
place = {United States},
year = {Tue Jun 14 00:00:00 EDT 2016},
month = {Tue Jun 14 00:00:00 EDT 2016}
}