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Title: Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells

Abstract

We investigate industrial-grade InGaN/GaN quantum wells (QWs) emitting in the green spectral region under high, resonant pumping conditions. Consequently, an ubiquitous high energy luminescence is observed that we assign to a polarization field Confined Hole Continuum (CHC). Our finding is supported by a unique combination of experimental techniques, including transmission electron microscopy, (time-resolved) photoluminescence under various excitation conditions, and electroluminescence, which confirm an extended out-of-plane localization of the CHC-states. The larger width of this localization volume surpasses the QW thickness, yielding enhanced non-radiative losses due to point defects and interfaces, whereas the energetic proximity to the bulk valence band states promotes carrier leakage.

Authors:
; ; ; ; ;  [1]; ; ;  [2]; ;  [3]
  1. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin (Germany)
  2. OSRAM Opto Semiconductors GmbH, Leibnizstraße 4, 93055 Regensburg (Germany)
  3. Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin (Germany)
Publication Date:
OSTI Identifier:
22596774
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 21; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CONFINEMENT; ELECTROLUMINESCENCE; EXCITATION; GALLIUM NITRIDES; INTERFACES; OPTICAL PUMPING; PHOTOLUMINESCENCE; POINT DEFECTS; QUANTUM WELLS; THICKNESS; TIME RESOLUTION; TRANSMISSION ELECTRON MICROSCOPY; VALENCE; WIDTH

Citation Formats

Nippert, Felix, E-mail: felix@physik.tu-berlin.de, Callsen, Gordon, Westerkamp, Steffen, Kure, Thomas, Nenstiel, Christian, Hoffmann, Axel, Nirschl, Anna, Pietzonka, Ines, Strassburg, Martin, Schulz, Tobias, and Albrecht, Martin. Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells. United States: N. p., 2016. Web. doi:10.1063/1.4953254.
Nippert, Felix, E-mail: felix@physik.tu-berlin.de, Callsen, Gordon, Westerkamp, Steffen, Kure, Thomas, Nenstiel, Christian, Hoffmann, Axel, Nirschl, Anna, Pietzonka, Ines, Strassburg, Martin, Schulz, Tobias, & Albrecht, Martin. Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells. United States. doi:10.1063/1.4953254.
Nippert, Felix, E-mail: felix@physik.tu-berlin.de, Callsen, Gordon, Westerkamp, Steffen, Kure, Thomas, Nenstiel, Christian, Hoffmann, Axel, Nirschl, Anna, Pietzonka, Ines, Strassburg, Martin, Schulz, Tobias, and Albrecht, Martin. Tue . "Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells". United States. doi:10.1063/1.4953254.
@article{osti_22596774,
title = {Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells},
author = {Nippert, Felix, E-mail: felix@physik.tu-berlin.de and Callsen, Gordon and Westerkamp, Steffen and Kure, Thomas and Nenstiel, Christian and Hoffmann, Axel and Nirschl, Anna and Pietzonka, Ines and Strassburg, Martin and Schulz, Tobias and Albrecht, Martin},
abstractNote = {We investigate industrial-grade InGaN/GaN quantum wells (QWs) emitting in the green spectral region under high, resonant pumping conditions. Consequently, an ubiquitous high energy luminescence is observed that we assign to a polarization field Confined Hole Continuum (CHC). Our finding is supported by a unique combination of experimental techniques, including transmission electron microscopy, (time-resolved) photoluminescence under various excitation conditions, and electroluminescence, which confirm an extended out-of-plane localization of the CHC-states. The larger width of this localization volume surpasses the QW thickness, yielding enhanced non-radiative losses due to point defects and interfaces, whereas the energetic proximity to the bulk valence band states promotes carrier leakage.},
doi = {10.1063/1.4953254},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 21,
volume = 119,
place = {United States},
year = {2016},
month = {6}
}